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STMicroelectronics STD10NM60ND
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- Part No.:
- STD10NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD10NM60ND.pdf
- Description:
- MOSFET N-CH 600V 8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,100
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Product details
Overview
STD10NM60ND from STMicroelectronics is an N-channel 600 V, 570 mΩ typ. FDmesh II Power MOSFET in DPAK (TO-252) package, featuring fast-recovery body diode, 100% avalanche tested operation, and high dv/dt ruggedness up to 40 V/ns. It delivers 8 A continuous drain current at TC = 25 °C and supports ZVS phase-shift converters and full-bridge topologies in high-efficiency SMPS.
For engineers reviewing the STD10NM60ND datasheet, STD10NM60ND pinout, STD10NM60ND application, or STD10NM60ND equivalent, key selection criteria include RDS(on) stability over temperature, reverse recovery charge (Qrr = 680 nC @ TJ = 25 °C), gate charge (Qg = 20 nC), and avalanche energy rating (EAS = 130 mJ).
Technical Context
This device employs ST's FDmesh II vertical strip-layout structure to simultaneously minimize conduction loss (RDS(on) = 570 mΩ typ. @ VGS = 10 V, ID = 4 A) and switching loss (Ciss = 577 pF, Coss = 32.4 pF). Its fast-recovery body diode enables hard-switched bridge configurations without external anti-parallel diodes.
The MOSFET integrates intrinsic avalanche robustness (IAS = 2.5 A, EAS = 130 mJ) and withstands high dv/dt stress (40 V/ns) under inductive turn-off, making it suitable for industrial UPS, solar inverters, and resonant LLC converters where reliability under transient overload is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports 400 V DC bus designs with ≥50% voltage margin for surge immunity |
| RDS(on) max | 600 mΩ - Enables <1.92 W conduction loss at 8 A, reducing heatsink requirements |
| Qg | 20 nC - Low gate drive power demand; compatible with standard 1-A peak gate drivers |
| Qrr | 680 nC @ TJ = 25 °C - Limits switching loss and EMI during diode commutation in bridge legs |
| EAS | 130 mJ - Guarantees single-pulse unclamped inductive switching survivability without external snubbers |
| dv/dt rating | 40 V/ns - Ensures noise-immune operation in high-speed half-bridge gate driver layouts |
| TJ max | 150 °C - Allows operation in sealed enclosures with limited airflow (RthJC = 1.79 °C/W) |
Pinout & Package
DPAK (TO-252) package: surface-mount, single-ended heat dissipation via exposed drain tab (Pin 2/TAB); thermally enhanced for PCB copper area mounting; RoHS-compliant ECOPACK2 grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate control input | Accepts 0–10 V logic-level drive; low input capacitance (Ciss = 577 pF) minimizes driver loading |
| D (Pin 2 / TAB) | Drain terminal & thermal path | Exposed metal tab serves as primary drain connection and heatsink interface; requires soldered copper pour |
| S (Pin 3) | Source reference node | Provides return path for load current and gate drive loop; critical for minimizing parasitic inductance in high-di/dt paths |
Key Features
| Feature | Design Value |
|---|---|
| Fast-recovery body diode | trr = 118 ns @ ISD = 8 A, di/dt = 100 A/µs - Reduces dead-time losses and eliminates need for external SiC diodes in synchronous rectification |
| Low gate charge | Qg = 20 nC - Enables >200 kHz switching with minimal driver power loss and reduced gate trace EMI |
| 100% avalanche tested | IAS = 2.5 A, EAS = 130 mJ - Validates ruggedness for real-world overvoltage transients without derating |
| High dv/dt ruggedness | 40 V/ns - Prevents spurious turn-on in high-side configurations with fast-rising VDS edges |
| Thermal resistance | RthJC = 1.79 °C/W - Delivers 70 W power dissipation capability with modest PCB copper area (1 inch² FR-4, 2 oz Cu) |
Applications
| Industrial UPS Systems | Solar DC-AC Inverters |
|---|---|
|
Use Scenario: Bidirectional DC-link switching in double-conversion UPS with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in full-bridge output stage handling 2–3 kW loads with forced-air cooling. Use Value: Fast body diode (trr = 118 ns) reduces cross-conduction risk during zero-voltage switching transitions, improving efficiency by ≥1.2% at full load. |
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to 230 V AC. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter leg operating at 16–20 kHz PWM frequency. Use Value: 600 V VDS rating provides 1.5× margin over 400 V DC-link peaks, ensuring long-term reliability under lightning-induced surges. |
| ZVS Phase-Shift Converters | Server PSU Primary Switches |
|
Use Scenario: Primary-side switches in telecom-grade 1–3 kW isolated DC-DC modules using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary side; leverages fast body diode for soft-commutation. Use Value: Low Qrr (680 nC) minimizes reverse recovery loss during ZVS transitions, enabling >96% peak efficiency at 12 V/200 A output. |
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW server PSUs with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge configuration driving transformer primary with 400 V nominal input. Use Value: Avalanche-tested construction (EAS = 130 mJ) absorbs leakage inductance spikes without snubber circuits, simplifying layout and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NM60ND | TO-220 package; identical electrical specs but higher RthJA (62 °C/W vs 50 °C/W) and no exposed tab for direct PCB thermal coupling | Better suited for through-hole prototyping or low-volume heatsink-mounted designs; not optimal for compact SMT power stages | Select when mechanical mounting flexibility outweighs thermal performance needs and board space permits larger footprint |
| IPP60R099C6 | 600 V, 99 mΩ SiC MOSFET; lower Qg (34 nC), higher VGS(th) (3.5 V), and no intrinsic body diode | Requires external anti-parallel SiC diode; enables >300 kHz operation but increases complexity and cost | Choose only when system-level efficiency gain justifies added bill-of-materials and gate-drive redesign effort |
Compared with STP10NM60ND and IPP60R099C6, STD10NM60ND uniquely balances SMT manufacturability, integrated fast diode functionality, and proven avalanche ruggedness-making it optimal for cost-sensitive, high-reliability 100–200 kHz industrial power supplies where layout simplicity and transient resilience are prioritized.
Availability
STD10NM60ND is available at Aetrix Electronics and suitable for industrial UPS systems, solar DC-AC inverters, and ZVS phase-shift converters requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.
Supply support for STD10NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with over 45 years of industrial-grade product development.
STD10NM60ND belongs to ST's FDmesh II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies in industrial, renewable energy, and telecom infrastructure applications.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STD10NM60ND supports 5 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS7103 Rev 4. This derating reflects thermal limits of the DPAK package and ensures safe operation within its 1.79 °C/W junction-to-case thermal resistance under sustained high-temperature conditions.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The STD10NM60ND has a gate threshold voltage range of 3–5 V and is fully enhanced at VGS = 10 V. A gate drive swing of 0 V to 10 V is sufficient for robust turn-on and turn-off; applying negative gate voltage is unnecessary and not recommended per ST's application guidance.
Can the body diode be used for synchronous rectification in a buck converter?
Yes-the fast-recovery body diode (trr = 118 ns, Qrr = 680 nC) is characterized for use in synchronous rectification. However, due to its 1.5 V forward voltage at 8 A, it is best applied in high-frequency, low-duty-cycle scenarios like ZVS or resonant topologies rather than continuous conduction mode buck converters where discrete Schottky diodes remain more efficient.
Is the DPAK package lead-free and RoHS compliant?
Yes. STD10NM60ND is manufactured in ECOPACK2-compliant DPAK packages, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device uses lead-free matte tin plating on terminals and halogen-free molding compound, as confirmed in Section 4 of DS7103 Rev 4.
STD10NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 577 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD10NM60ND FAQ
1.How can I place an order for STD10NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STD10NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD10NM60ND reliable?
The price and inventory of STD10NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD10NM60ND is usually 5 days.
3.What payment methods are accepted for STD10NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD10NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD10NM60ND?
STD10NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD10NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD10NM60ND?
For technical support, including STD10NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD10NM60ND requirements.
6.How does Aetrix verify that STD10NM60ND is sourced from the original manufacturer or authorized distributors?
All STD10NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD10NM60ND meets industry standards.
7.What is the process for return or replacement of STD10NM60ND?
All STD10NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STD10NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD10NM60ND part is unused and in its original packaging.
Return procedure for STD10NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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