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STMicroelectronics STD10NM65N
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- Part No.:
- STD10NM65N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD10NM65N.pdf
- Description:
- MOSFET N-CH 650V 9A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,090
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Product details
Overview
STD10NM65N from STMicroelectronics is an N-channel 650 V, 9 A MDmesh™ II Power MOSFET in DPAK (TO-252) package, featuring 0.43 Ω typ. RDS(on), 25 nC total gate charge, and 100% avalanche tested operation-designed for high-efficiency AC-DC flyback and PFC converters in industrial power supplies.
For engineers reviewing the STD10NM65N datasheet, STD10NM65N pinout, STD10NM65N application, or STD10NM65N equivalent, key selection criteria include its 650 V VDS, low Ciss (850 pF), robust 200 mJ single-pulse avalanche energy, and thermal resistance of 1.39 °C/W (junction-to-case), critical for thermally constrained board-level designs.
Technical Context
This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 650 V rating supports universal-input offline applications, while the 25 nC Qg and 14 nC Qgd enable fast, controllable turn-off with reduced Miller-induced shoot-through risk.
The integrated body diode exhibits 330 ns trr and 3 μC Qrr under 9 A/100 A/μs conditions-optimized for hard-switched topologies where diode recovery behavior directly impacts EMI and voltage overshoot. The 15 V/ns dv/dt capability ensures stable operation during fast transient events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports 400 V DC bus with 30% margin for surge and ringing in offline SMPS |
| RDS(on) max | 0.48 Ω @ 10 V VGS, 4.5 A - enables <1.9 W conduction loss at 9 A continuous current |
| Qg | 25 nC - determines gate drive power requirement and switching speed in 100–500 kHz converters |
| EAS | 200 mJ - guarantees ruggedness against unclamped inductive switching in PFC and LLC circuits |
| Rthj-case | 1.39 °C/W - allows 90 W dissipation at ≤25 °C case temperature, enabling compact heatsink design |
| Ciss | 850 pF @ 50 V - sets input impedance and influences gate driver sizing and EMI filter design |
| trr | 330 ns - defines minimum dead-time setting to prevent cross-conduction in half-bridge configurations |
Pinout & Package
DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; standard 3-pin surface-mount outline compliant with JEDEC MO-247.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain / Tab) | Main power output terminal and thermal path | Exposed copper tab (Pin 2) must be soldered to large PCB copper area for thermal management and primary current return path |
| G (Gate) | Control input | High-impedance MOS control node requiring low-inductance gate loop; sensitive to noise due to 2 V threshold |
| S (Source) | Reference and current return | Common reference for gate drive and current sensing; forms Kelvin source connection when used with dedicated sense FETs |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces specific on-resistance by 35% vs. planar 650 V MOSFETs, enabling smaller die size without sacrificing ruggedness |
| Low gate charge (Qg = 25 nC) | Enables use of low-power gate drivers (e.g., 1 A peak) while maintaining <50 ns turn-on delay in 300 kHz PFC stages |
| 100% avalanche tested | Guarantees single-pulse avalanche capability up to 2.5 A at Tj = 150 °C-critical for overload and short-circuit survival |
| Low Coss (53 pF) | Minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements per ST's environmental grade A2 specification |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
Use Scenario: 500 W active clamp forward converter operating at 100 kHz with 90–264 V AC input. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 650 V blocking and 9 A peak current during PWM cycles. Use Value: 0.43 Ω RDS(on) limits conduction loss to <3.5 W at full load, while 200 mJ EAS prevents failure during output short-circuit events. | Use Scenario: 3 kW telecom rectifier front-end using interleaved PFC with 16 kHz switching. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), conducting 9 A RMS with 520 V DC link. Use Value: Low Qgd/Qg ratio (14/25 = 0.56) suppresses Miller plateau duration, improving controllability under high dv/dt conditions. |
| LED Driver Ballasts | EV Onboard Charger Stages |
Use Scenario: 150 W isolated flyback LED driver for street lighting with wide ambient temperature range (−40 to +85 °C). IC Role / Device Role / Timing Role: Main switching element in primary-side regulation, cycling at 65 kHz with 650 V stress. Use Value: −55 to +150 °C junction temperature range and stable VGS(th) (2–4 V) ensure reliable startup and regulation across temperature extremes. | Use Scenario: Secondary-side synchronous rectification in 6.6 kW OBC LLC resonant converter. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier replacing diode in secondary winding, clamping 650 V reverse voltage. Use Value: Fast 330 ns trr and low 1.3 V VSD reduce conduction and recovery losses by >25% vs. SiC Schottky alternatives in cost-sensitive designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NM65N | Same die, TO-220 package; higher Rthj-case (1.6 °C/W) and no exposed tab for PCB thermal relief | Requires bolt-down heatsink; unsuitable for space-constrained SMT layouts | Select when mechanical mounting flexibility outweighs PCB thermal integration needs |
| IPP65R045CFD7 | Infineon CoolMOS™ CFD7; lower RDS(on) (0.045 Ω), but higher Qg (45 nC) and no avalanche rating | Better efficiency above 200 kHz, but requires external clamping for inductive transients | Select for ultra-high-frequency ZVS/ZCS topologies where avalanche immunity is managed externally |
Compared with STP10NM65N, STD10NM65N offers superior PCB thermal performance and automated assembly compatibility; versus IPP65R045CFD7, it trades 0.015 Ω higher RDS(on) for guaranteed avalanche ruggedness and lower gate drive complexity in hard-switched PFC.
Availability
STD10NM65N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and LED driver ballasts requiring stable component supply and long-term production continuity.
Supply support for STD10NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.
STD10NM65N belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in cost-sensitive industrial and infrastructure applications.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STD10NM65N supports 5.7 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS5566 Rev 4. This derating reflects thermal limitations of the DPAK package and ensures safe operation within SOA boundaries at elevated ambient temperatures.
Does this MOSFET include an integrated body diode, and what are its recovery characteristics?
Yes, STD10NM65N features an integral source-drain body diode with 330 ns reverse recovery time (trr) and 3 μC reverse recovery charge (Qrr) at ISD = 9 A, di/dt = 100 A/μs, and VDD = 100 V. These values are measured per Figure 14 test circuit and support hard-switched topologies with controlled dead-time.
Is the STD10NM65N suitable for use in zero-voltage switching (ZVS) circuits?
Yes-its low Coss (53 pF) and Ciss (850 pF), combined with 25 nC Qg, enable efficient ZVS operation in LLC and phase-shifted full-bridge converters. The 650 V rating provides sufficient margin for resonant voltage peaks up to 520 V DC bus applications.
What is the gate threshold voltage range, and how does it vary with temperature?
VGS(th) ranges from 2.0 V to 4.0 V at 25 °C (Table 4), and decreases linearly to ~0.7× nominal at 150 °C (Figure 8). This predictable negative temperature coefficient aids current sharing in paralleled configurations and simplifies gate drive design for thermal stability.
STD10NM65N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 480mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 850 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 90W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD10NM65N FAQ
1.How can I place an order for STD10NM65N through Aetrix?
Please submit a Request for Quotation (RFQ) for STD10NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD10NM65N reliable?
The price and inventory of STD10NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD10NM65N is usually 5 days.
3.What payment methods are accepted for STD10NM65N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD10NM65N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD10NM65N?
STD10NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD10NM65N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD10NM65N?
For technical support, including STD10NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD10NM65N requirements.
6.How does Aetrix verify that STD10NM65N is sourced from the original manufacturer or authorized distributors?
All STD10NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD10NM65N meets industry standards.
7.What is the process for return or replacement of STD10NM65N?
All STD10NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STD10NM65N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD10NM65N part is unused and in its original packaging.
Return procedure for STD10NM65N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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