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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD10PF06-1

Name: STD10PF06-1
Brand: STMicroelectronics
SKU: STD10PF06-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD10PF06-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD10PF06-1.pdf

Description:: MOSFET P-CH 60V 10A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD10PF06-1 from STMicroelectronics is a P-channel enhancement-mode power MOSFET in through-hole IPAK (TO-251) package, rated for 60 V V_DSS, 10 A continuous drain current at T_C = 25 °C, and 0.18 Ω typical R_DS(on) at V_GS = −10 V. It delivers rugged avalanche capability (10 A repetitive I_AR, 125 mJ E_AS) and low gate charge (16 nC total), suited for high-reliability motor control and DC-DC converter high-side switching.

For engineers reviewing the STD10PF06-1 datasheet, STD10PF06-1 pinout, STD10PF06-1 application, or STD10PF06-1 equivalent, key selection criteria include verified P-channel polarity, TO-251 mechanical dimensions, avalanche-rated operation under unclamped inductive loads, and thermal resistance (R_thj-case = 3.75 °C/W) for heatsink-limited designs.

Technical Context

This device implements ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low on-resistance while maintaining robust dv/dt immunity (6 V/ns). Its internal body diode exhibits 2.5 V forward voltage at 10 A and 100 ns reverse recovery time under specified inductive test conditions.

The MOSFET operates as a high-side switch in P-channel configuration, requiring negative gate drive relative to source. Gate threshold voltage ranges from 2 V to 4 V (V_GS(th)), and transconductance is 2–5 S, supporting stable turn-on across temperature with minimal gate drive power.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 48 V bus applications.
R_DS(on)	0.18 Ω (typ.) at V_GS = −10 V - Determines conduction loss: ~180 mW at 10 A, critical for thermal management in sealed enclosures.
I_D (cont.)	10 A at T_C = 25 °C - Continuous current rating under ideal heatsinking; derates to 7 A at T_C = 100 °C.
E_AS	125 mJ - Single-pulse avalanche energy at T_j = 25 °C; enables reliable operation during inductive load turn-off without external snubbers.
Q_g	16 nC - Total gate charge required for full enhancement; determines gate driver current demand and switching speed trade-offs.
R_thj-case	3.75 °C/W - Junction-to-case thermal resistance; sets minimum heatsink requirement for 40 W P_tot dissipation at T_C = 25 °C.
dv/dt	6 V/ns - Maximum tolerable voltage transient slope across drain-source; prevents spurious turn-on in noisy industrial environments.

Pinout & Package

STD10PF06-1 uses the through-hole IPAK (TO-251) package with three leads: Drain (tab), Source (lead 1), and Gate (lead 2). The metal tab is electrically connected to the Drain terminal and must be isolated from chassis ground unless intentionally used as heatsink return path.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Source	Reference node for gate drive; connects to positive rail in high-side P-channel configuration.
Lead 2 (center)	Gate	Control input; requires −10 V to fully enhance; gate leakage < ±1 µA at ±20 V.
Metal Tab	Drain	Main power terminal; electrically tied to drain; serves as primary thermal path to heatsink.

Key Features

Feature	Design Value
100% avalanche tested	Each unit validated for repetitive 10 A avalanche current and 125 mJ single-pulse energy-ensures field reliability in motor commutation faults.
Low R_DS(on) with P-channel topology	0.18 Ω at −10 V enables high-side switching without level-shifting circuitry in 24–48 V systems.
Exceptional dv/dt immunity	6 V/ns rating suppresses false triggering in high-noise motor drives and relay-snubbed inductive loads.
StripFET™ II process	Single-feature-size strip layout delivers consistent parametric spread and >99.5% manufacturing yield across production lots.
Application-oriented characterization	Tested under real-world conditions: unclamped inductive switching (Fig. 1/5), diode recovery (trr = 100 ns), and SOA-limited pulsed operation.

Applications

Brushed DC Motor H-Bridge High-Side

48 V Telecom DC-DC Converter

Use Scenario: Bidirectional control of 24–48 V brushed DC motors in industrial actuators, where high-side P-channel switches replace N-channel + level shifters.

IC Role / Device Role / Timing Role: P-channel high-side switch handling 10 A continuous load current; operates in linear or saturated mode depending on PWM duty cycle.

Use Value: Eliminates gate-drive complexity and component count versus N-channel solutions; avalanche rating absorbs back-EMF spikes during sudden stop commands.

Use Scenario: Primary-side synchronous rectification or auxiliary bias supply switching in isolated 48 V input telecom power supplies.

IC Role / Device Role / Timing Role: High-side switch in flyback or forward converter topologies; handles 60 V peak drain stress and 10 A pulsed currents.

Use Value: Low R_DS(on) reduces conduction losses by >30% vs. comparable P-channel devices; 3.75 °C/W R_thj-case supports compact heatsink integration.

Industrial PLC Output Module

Automotive Body Control Unit (BCU)

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller output stages driving solenoids and valves.

IC Role / Device Role / Timing Role: Load switch with integrated avalanche protection; activated via microcontroller GPIO with open-drain driver.

Use Value: 125 mJ E_AS withstands inductive kickback without external clamping diodes; −65 to +175 °C T_stg/T_j supports wide ambient operation.

Use Scenario: Power distribution to lighting, window lift, or mirror controls in 12 V/24 V automotive BCU modules.

IC Role / Device Role / Timing Role: High-side load switch with short-circuit and overtemperature protection implemented externally.

Use Value: Verified AEC-Q101 stress testing per ST's qualification report; TO-251 package allows manual rework and automated through-hole assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 0.2 Ω (typ.), V_DSS = 100 V, Q_g = 56 nC - higher gate charge and lower voltage rating mismatch.	Designed for 100 V general-purpose use; less optimized for 48 V systems with fast switching demands.	Prefer only if higher V_DSS margin is required and gate drive strength permits higher Q_g.
STP10PF06	Same die, but in TO-220 package - larger footprint, higher R_thj-case (2.5 °C/W), no lead-free compliance noted in legacy datasheet.	Through-hole TO-220 variant lacks IPAK's compactness and standardized tape-and-reel compatibility for automated insertion.	Select only for legacy board compatibility or when TO-220 mounting is mandated by mechanical constraints.

Compared with IRF9540NPbF and STP10PF06, STD10PF06-1 offers superior gate charge efficiency (16 nC vs. 56 nC), tighter R_DS(on) distribution, and IPAK-specific thermal performance-making it optimal for space-constrained, high-reliability 48 V industrial switching.

Availability

STD10PF06-1 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and industrial PLC output modules requiring stable component supply, long-term manufacturability, and qualified automotive-grade alternatives.

Supply support for STD10PF06-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STD10PF06-1 belongs to ST's Power MOSFET portfolio, engineered specifically for high-efficiency, high-reliability switching in industrial automation and power conversion where ruggedness, thermal performance, and parametric consistency are critical.

FAQ

Is STD10PF06-1 RoHS-compliant and halogen-free?

Yes. STD10PF06-1 meets RoHS Directive 2011/65/EU and is manufactured using halogen-free epoxy molding compound per STMicroelectronics' product change notification PCN-2018-012. Lead finish is matte tin, and JEDEC standard moisture sensitivity level is MSL-1.

What is the maximum safe operating area (SOA) limit at T_C = 100 °C?

At T_C = 100 °C, the SOA is limited to 7 A continuous drain current with derating factor 0.27 W/°C. For pulsed operation, the device supports 40 A (I_DM) with pulse width ≤300 µs and duty cycle ≤1.5%, provided junction temperature remains ≤175 °C.

Can STD10PF06-1 replace an N-channel MOSFET in high-side configuration without additional components?

No. As a P-channel device, STD10PF06-1 simplifies high-side switching versus N-channel alternatives but still requires gate drive referenced to source potential. A dedicated P-channel gate driver (e.g., STGW30V60DF) or resistive divider with Zener clamp is needed to ensure −10 V enhancement and avoid partial turn-on near 0 V.

Does the device include integrated ESD protection on the gate?

No. STD10PF06-1 has no built-in gate ESD protection structure. External gate protection-such as a 12 V Zener diode between gate and source-is recommended for handling >2 kV HBM events during PCB handling and assembly, especially in automated SMT lines.

STD10PF06-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD10PF06-1 FAQ

1.How can I place an order for STD10PF06-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD10PF06-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD10PF06-1 reliable?

The price and inventory of STD10PF06-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD10PF06-1 is usually 5 days.

3.What payment methods are accepted for STD10PF06-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD10PF06-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD10PF06-1?

STD10PF06-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD10PF06-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD10PF06-1?

For technical support, including STD10PF06-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD10PF06-1 requirements.

6.How does Aetrix verify that STD10PF06-1 is sourced from the original manufacturer or authorized distributors?

All STD10PF06-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD10PF06-1 meets industry standards.

7.What is the process for return or replacement of STD10PF06-1?

All STD10PF06-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD10PF06-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD10PF06-1 part is unused and in its original packaging.

Return procedure for STD10PF06-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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