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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD110N8F6

Name: STD110N8F6
Brand: STMicroelectronics
SKU: STD110N8F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD110N8F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD110N8F6.pdf

Description:: MOSFET N-CH 80V 80A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD110N8F6 from STMicroelectronics is an N-channel 80 V, 80 A Power MOSFET in DPAK (TO-252) package, featuring 0.0056 Ω typ. R_DS(on), 150 nC total gate charge, and 180 mJ single-pulse avalanche energy. It serves as a high-current, low-loss switching device in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the STD110N8F6 datasheet, STD110N8F6 pinout, STD110N8F6 application, or STD110N8F6 equivalent, key selection criteria include R_DS(on) at 40 A/10 V, thermal resistance (0.9 °C/W j-case), safe operating area (SOA) limits, and unclamped inductive switching ruggedness.

Technical Context

This STripFET™ F6 MOSFET uses a trench-gate structure to achieve ultra-low on-resistance and reduced gate charge. Its 80 V V_DS rating and 72 A continuous current at T_C = 100 °C support high-efficiency operation in 48 V industrial and automotive power stages.

The device integrates a robust body diode with 30 ns reverse recovery time and 34 nC Q_rr, enabling fast synchronous rectification. Avalanche capability (180 mJ at 60 V) ensures reliability under transient overvoltage conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V nominal bus systems with 25 % overhead for transients
R_DS(on) max	0.0065 Ω - Limits conduction loss to ≤20.8 W at 80 A, enabling compact thermal design
I_D cont @ T_C=100°C	72 A - Sustains high load current in enclosed industrial enclosures without derating
Q_g	150 nC - Determines gate drive power requirement (~1.5 mW per MHz at 10 V swing)
E_AS	180 mJ - Withstands unclamped inductive switching events up to 55 A at 60 V
R_thj-case	0.9 °C/W - Enables 167 W dissipation with ≤150 °C junction rise above 25 °C case
t_r/t_f	61 ns / 48 ns - Supports >500 kHz hard-switching in resonant and PWM topologies

Pinout & Package

DPAK (TO-252) package with exposed drain pad for enhanced thermal performance and mechanical stability on PCB. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives 10 V logic-level drive; threshold voltage 2.5–4.5 V enables compatibility with 3.3 V and 5 V controllers
Drain (D)	High-side power input	Connected to exposed copper tab; carries full load current and requires thermal pad connection to PCB ground plane
Source (S)	Reference node	Serves as return path for load current and gate drive reference; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
Very low R_DS(on)	0.0056 Ω typ. at V_GS = 10 V reduces I²R losses by ≥35 % vs. prior-generation F5 devices in same package
Low gate charge	150 nC total charge minimizes driver IC stress and switching energy loss in high-frequency operation
High avalanche ruggedness	180 mJ single-pulse rating allows reliable operation in inductive load switching without external clamping
Robust body diode	30 ns t_rr and 2.3 A I_RRM support efficient freewheeling in half-bridge and synchronous buck configurations

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: 3-phase BLDC inverter for HVAC blowers and pump controllers operating from 48 V bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack configuration; handles 72 A continuous phase current.

Use Value: Low R_DS(on) and SOA margin reduce heatsink size by 40 % vs. 0.008 Ω alternatives at same current rating.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V flyback converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: Main power switch with 500 kHz PWM operation and unclamped inductive turn-off.

Use Value: 180 mJ E_AS eliminates need for RCD snubber, simplifying BOM and improving efficiency by 1.2 %.

Automotive Body Control Module

Server PSU OR-ing Circuit

Use Scenario: Load switch for 12 V/24 V battery-fed lighting and solenoid drivers in BCMs.

IC Role / Device Role / Timing Role: High-side protected switch with integrated avalanche handling during load dump transients.

Use Value: 80 V rating and -55 to 175 °C TJ range meet ISO 16750-2 pulse 5a requirements without derating.

Use Scenario: OR-ing FET in redundant 48 V server power supply backplane.

IC Role / Device Role / Timing Role: Low-loss forward conduction path with fast body diode recovery for hot-swap transitions.

Use Value: 34 nC Q_rr and 30 ns t_rr limit reverse recovery loss to <15 µJ per cycle, reducing thermal stress in parallel arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 0.004 Ω (lower), but Q_g = 170 nC (higher); 100 V rating	Better conduction loss, but higher gate drive loss and larger SOA derating at 48 V	Prefer when minimizing I²R dominates; avoid if gate drive power or layout space is constrained
STP110N8F6	Same F6 die in TO-220 package; R_thj-case = 1.2 °C/W (worse); identical electrical specs	Requires larger heatsink; unsuitable for space-constrained SMT designs	Select only when through-hole mounting or higher manual assembly tolerance is required

Compared with IRF1404ZPBF and STP110N8F6, STD110N8F6 delivers optimal balance of low R_DS(on), moderate Q_g, and DPAK thermal performance-making it ideal for high-density, high-reliability SMT power stages where board area and thermal management are co-constrained.

Availability

STD110N8F6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for STD110N8F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD110N8F6 belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained SMT power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD110N8F6 supports 72 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating assumes proper PCB copper area (≥1 inch², 2 oz) and thermal via placement beneath the exposed drain pad to maintain junction temperature ≤175 °C.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent parasitic oscillation. For typical 48 V, 80 A switching, a 4.7 Ω resistor limits peak gate current to ~2.1 A while maintaining 24 ns turn-on delay and 162 ns turn-off delay, as measured in Figure 13 test circuit.

Can STD110N8F6 replace older STripFET F5 devices in existing designs?

Yes-STD110N8F6 is a direct drop-in replacement for F5-series equivalents like STD105N8F5, offering 15 % lower R_DS(on) and 20 % lower Q_g with identical DPAK footprint, pinout, and voltage ratings. No layout or drive circuit changes are required.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_C = 25 °C, the SOA limit is 55 A at 60 V (Figure 2), defined by both thermal and avalanche constraints. Operation beyond this boundary risks single-pulse failure due to localized heating or avalanche-induced latch-up.

STD110N8F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9130 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD110N8F6 FAQ

1.How can I place an order for STD110N8F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD110N8F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD110N8F6 reliable?

The price and inventory of STD110N8F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD110N8F6 is usually 5 days.

3.What payment methods are accepted for STD110N8F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD110N8F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD110N8F6?

STD110N8F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD110N8F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD110N8F6?

For technical support, including STD110N8F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD110N8F6 requirements.

6.How does Aetrix verify that STD110N8F6 is sourced from the original manufacturer or authorized distributors?

All STD110N8F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD110N8F6 meets industry standards.

7.What is the process for return or replacement of STD110N8F6?

All STD110N8F6 units undergo pre-shipment inspection (PSI). If there is an issue with STD110N8F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD110N8F6 part is unused and in its original packaging.

Return procedure for STD110N8F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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