STMicroelectronics STD11N50M2

Overview

STD11N50M2 from STMicroelectronics is an N-channel 500 V, 8 A Power MOSFET in DPAK (TO-252) package, fabricated with MDmesh™ M2 technology. It delivers 0.45 Ω typ. R_DS(on), 12 nC total gate charge, and 100% avalanche-tested ruggedness for high-efficiency flyback and PFC converters operating up to 150 °C junction temperature.

For engineers reviewing the STD11N50M2 datasheet, STD11N50M2 pinout, STD11N50M2 application, or STD11N50M2 equivalent, key selection criteria include its 500 V V_(BR)DSS, low C_oss profile (26 pF), Zener-protected gate, and thermal resistance of 1.47 °C/W (junction-to-case), critical for compact power supply designs.

Technical Context

This device uses ST's MDmesh™ M2 strip layout and optimized vertical structure to simultaneously reduce conduction loss and switching loss. Its 12 nC Q_g and 6.4 nC Q_gd enable fast, low-loss switching at high frequencies, while the 15 V/ns diode recovery dv/dt rating ensures robustness in hard-switched topologies.

The integrated body diode exhibits 258 ns trr and 1.84 µC Q_rr at 25 °C, supporting efficient discontinuous conduction mode (DCM) operation. The 2.5 kV isolation voltage (RMS, 1 s) between leads and heat sink enables safe use in isolated AC-DC front-ends without additional insulation barriers.

Key Specifications

Pinout & Package

DPAK (TO-252) package: surface-mount, single-sided heatsinking via exposed drain tab (Pin 2/TAB). Thermal pad occupies >80% of bottom footprint; requires solder paste stencil design per Figure 24 (DS10177 Rev 3, p.15).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Compared with STF11N50M2, STD11N50M2 provides 3.4× lower thermal resistance for PCB-only cooling; compared with IPP60R099C7, it cuts gate charge by 64%, reducing driver stage losses and simplifying gate loop layout in high-frequency adapters.

Availability

STD11N50M2 is available at Aetrix Electronics and suitable for AC-DC adapters, server PFC modules, industrial LED drivers, and telecom DC-DC bricks requiring stable component supply and long-term industrial lifecycle support.

Supply support for STD11N50M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD11N50M2 belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS and PFC applications where low R_DS(on) × Q_g and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD11N50M2 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10177 Rev 3. This derating reflects thermal limitations of the DPAK package; operation above this requires active cooling or reduced duty cycle to maintain T_j ≤ 150 °C.

Does the device include integrated gate protection?

Yes - STD11N50M2 integrates a Zener diode between gate and source, clamping V_GS to ±25 V. This protects the gate oxide from ESD and layout-induced voltage overshoot, eliminating the need for external gate protection components in most applications.

Can STD11N50M2 replace STD11N50M in existing designs?

Yes - STD11N50M2 is a direct upgrade to STD11N50M, offering lower R_DS(on) (0.45 Ω vs. 0.55 Ω typ.), reduced Q_g (12 nC vs. 15 nC), and improved avalanche ruggedness. Pinout and package are identical, enabling drop-in replacement without layout changes.

What is the recommended PCB footprint for thermal performance?

Per Figure 24 (DS10177 Rev 3, p.15), the DPAK footprint must include a minimum 100 mm² copper pour connected to Pin 2 (TAB) with ≥4 thermal vias (0.3 mm diameter, filled) to inner ground plane. This achieves the rated 1.47 °C/W R_thj-case and prevents localized hot spots above 125 °C.