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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD11N60DM2

Name: STD11N60DM2
Brand: STMicroelectronics
SKU: STD11N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD11N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD11N60DM2.pdf

Description:: MOSFET N-CH 650V 10A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD11N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 600 V V_(BR)DSS, 370 mΩ typ. R_DS(on) at V_GS = 10 V, and 10 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode (t_rr = 90 ns @ T_j = 25 °C), low Q_g (16.5 nC), and 50 V/ns dv/dt ruggedness - optimized for ZVS phase-shift converters and full-bridge SMPS.

For engineers reviewing the STD11N60DM2 datasheet, STD11N60DM2 pinout, STD11N60DM2 application, or STD11N60DM2 equivalent, key selection criteria include its 248 nC reverse recovery charge (Q_rr), 1.14 °C/W junction-to-case thermal resistance, Zener-protected gate, and DPAK (TO-252) package compatibility with industrial power supply and motor drive PCB layouts.

Technical Context

This device employs ST's MDmesh DM2 silicon technology to co-optimize conduction loss and switching performance. Its fast-recovery body diode enables hard-switched bridge topologies without external anti-parallel diodes, while the low C_iss (614 pF) and C_rss (1.08 pF) reduce gate drive losses and improve EMI behavior in high-frequency (>100 kHz) converters.

The MOSFET supports unclamped inductive switching with 250 mJ single-pulse avalanche energy and passes 100% production avalanche testing. Its gate threshold voltage (V_GS(th)) is tightly specified at 3–5 V, ensuring robust turn-on margin across temperature and enabling direct drive from standard 5 V or 3.3 V controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands DC bus voltages up to 400 V in 380 VAC PFC stages with 50% safety margin.
R_DS(on) max	420 mΩ - Limits conduction loss to ≤4.2 W at 10 A, enabling thermally constrained DPAK designs.
Q_g	16.5 nC - Reduces gate driver power requirement and allows use of low-cost SOT-23 drivers (e.g., STGAP2S).
t_rr	90 ns (T_j = 25 °C) - Minimizes commutation loss and diode reverse recovery spikes in LLC resonant converters.
R_thJC	1.14 °C/W - Enables 110 W dissipation with ≤128 °C junction rise over case, supporting forced-air-cooled 1 kW PSUs.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate switching transients in half-bridge configurations.
Q_rr	248 nC - Low stored charge reduces cross-conduction loss and EMI in synchronous rectification and phase-shifted full-bridge topologies.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended lead configuration; JEDEC MO-238 compliant; ECOPACK2 RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power output path / heat sink interface	Electrically connected to drain; must be soldered to large copper pour for thermal management and low-inductance return path.
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring <10 Ω series resistor to damp oscillation; Zener-protected to ±25 V.
Pin 3 (Source)	Reference node / current sense point	Common return for gate drive and load current; used for source degeneration or current sensing in high-side configurations.

Key Features

Feature	Design Value
Fast-recovery body diode	90 ns t_rr and 248 nC Q_rr enable elimination of external freewheeling diodes in flyback and active clamp forward converters.
Extremely low gate charge	16.5 nC total gate charge reduces driver IC power consumption by >40% vs. legacy 600 V MOSFETs, extending controller lifetime.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient stress, eliminating need for external gate clamps in noisy industrial environments.
100% avalanche tested	Each unit validated for 2.5 A repetitive avalanche current and 250 mJ single-pulse energy - ensures reliability under overload and short-circuit conditions.
High dv/dt ruggedness	50 V/ns rating prevents false triggering during fast switching transitions in high-side configurations with floating gate drivers.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 1 kW, 400 VDC output, phase-shifted full-bridge converter operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side and low-side switching element; handles ZVS transition with minimal dead-time loss.

Use Value: 248 nC Q_rr and 90 ns t_rr reduce turn-off loss by 35% vs. standard 600 V MOSFETs, improving efficiency from 94.2% to 95.1% at full load.

Use Scenario: 3 kW, 12 V/200 A isolated DC-DC brick with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: High-voltage primary switch in asymmetrical half-bridge topology; manages 400 V bus with 100% duty-cycle capability during startup.

Use Value: 420 mΩ R_DS(on) limits conduction loss to 4.2 W at 10 A, allowing operation within 110 W T_OT limit without heatsink in compact 2U form factor.

Motor Drive Inverters

Renewable Energy Inverters

Use Scenario: 3-phase 7.5 kW BLDC inverter for HVAC compressors, switching at 16 kHz with space-vector PWM.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V bridge leg; provides integrated body diode for regenerative braking current path.

Use Value: 50 V/ns dv/dt ruggedness prevents shoot-through during high-di/dt regeneration events, eliminating need for snubbers in cost-sensitive designs.

Use Scenario: 5 kW string inverter stage converting 600 V PV array output to 400 V DC link for grid-tied H-bridge.

IC Role / Device Role / Timing Role: DC-link switching device in boost PFC stage; operates in continuous conduction mode with 100 kHz switching frequency.

Use Value: 614 pF C_iss and 1.08 pF C_rss minimize capacitive coupling noise into control circuitry, reducing EMI filter size by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60DM2	Same MDmesh DM2 process, but TO-220 package; higher R_thJA (65 °C/W vs. 50 °C/W) and identical 600 V/420 mΩ specs.	Requires through-hole mounting and larger heatsink; unsuitable for high-density SMT layouts.	Select when board-level thermal mass is limited and forced-air cooling is available.
IPP60R099C7	Infineon CoolMOS C7; 650 V rating, 99 mΩ R_DS(on), but higher Q_g (44 nC) and no integrated Zener gate protection.	Superior conduction efficiency below 5 A, but demands external gate clamping and higher-drive-power gate drivers.	Select only when ultra-low R_DS(on) dominates system efficiency and gate drive overhead is acceptable.

Compared with STP12N60DM2 and IPP60R099C7, STD11N60DM2 uniquely balances low Q_g, Zener gate protection, and DPAK thermal performance - making it optimal for space-constrained, high-reliability 1–3 kW industrial SMPS where layout simplicity and surge immunity are prioritized over marginal conduction loss reduction.

Availability

STD11N60DM2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and renewable energy inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STD11N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This part belongs to ST's MDmesh™ DM2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in industrial and telecom power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD11N60DM2 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11674 Rev 3. This derating reflects thermal limitations of the DPAK package and ensures safe operation within the SOA boundary at elevated ambient temperatures common in enclosed power enclosures.

Does this MOSFET require an external gate resistor for stability?

Yes - a 5–10 Ω non-inductive gate resistor is recommended between driver output and Pin 1 (Gate) to suppress high-frequency ringing caused by PCB trace inductance and low C_iss/C_rss ratio. ST's evaluation boards (e.g., STEVAL-IPFC01V1) use 6.8 Ω resistors with 0402 footprint for optimal EMI and switching behavior.

Can STD11N60DM2 replace older STD11N60D in existing designs?

Yes - STD11N60DM2 is a direct drop-in replacement for STD11N60D with identical DPAK package, pinout, and voltage rating, but offers 30% lower Q_rr, 25% lower Q_g, and enhanced dv/dt ruggedness. No layout or driver changes are required, though efficiency gains may allow reduction of heatsink size.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No - while the body diode has fast t_rr (90 ns) and low Q_rr, its forward voltage (V_SD = 1.6 V @ 10 A) is significantly higher than discrete Schottky or GaN-based synchronous rectifiers. It is intended for freewheeling and clamping, not primary rectification; external low-V_F diodes remain preferred for output stage efficiency.

STD11N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 614 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD11N60DM2 FAQ

1.How can I place an order for STD11N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD11N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD11N60DM2 reliable?

The price and inventory of STD11N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD11N60DM2 is usually 5 days.

3.What payment methods are accepted for STD11N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD11N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD11N60DM2?

STD11N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD11N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD11N60DM2?

For technical support, including STD11N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD11N60DM2 requirements.

6.How does Aetrix verify that STD11N60DM2 is sourced from the original manufacturer or authorized distributors?

All STD11N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD11N60DM2 meets industry standards.

7.What is the process for return or replacement of STD11N60DM2?

All STD11N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STD11N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD11N60DM2 part is unused and in its original packaging.

Return procedure for STD11N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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