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STMicroelectronics STD11NM50N

Part No.:
STD11NM50N
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD11NM50N.pdf
Description:
MOSFET N-CH 500V 8.5A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,719

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Product details

Overview

STD11NM50N from STMicroelectronics is an N-channel 500 V, 0.4 Ω (typ), 8.5 A MDmesh™ II Power MOSFET in DPAK package, designed for high-efficiency switching converters requiring low gate charge (19 nC) and low output capacitance (210 pF). It delivers robust avalanche capability (150 mJ single-pulse) and operates up to 150 °C junction temperature.

For engineers reviewing the STD11NM50N datasheet, STD11NM50N pinout, STD11NM50N application, or STD11NM50N equivalent, key selection criteria include RDS(on) at 10 V gate drive, Ciss/Coss trade-offs for hard-switched SMPS, thermal resistance (Rthj-pcb = 50 °C/W on 1-inch² FR-4), and TO-220FP/DPAK footprint compatibility in offline flyback or PFC stages.

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure with strip layout to minimize conduction and switching losses simultaneously. Its 500 V VDS rating and 15 V/ns dv/dt immunity support operation in 400 V DC bus applications with margin against voltage transients.

The MOSFET features a fast body diode (trr = 230 ns at Tj = 25 °C) and low Qgd/Qg ratio (3.7/19 nC), enabling clean turn-off and reduced Miller-induced shoot-through risk in half-bridge topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - supports 400 V AC-input offline converters with 25% safety margin
RDS(on) max 0.47 Ω @ VGS = 10 V, ID = 4.5 A - enables <1.5 W conduction loss at 8.5 A continuous
Qg 19 nC - reduces gate driver power requirement and switching transition time
Coss(eq) 210 pF - lowers capacitive turn-on loss in hard-switched topologies
trr 230 ns @ ISD = 8.5 A, di/dt = 100 A/µs - minimizes reverse recovery energy in synchronous rectification
PTOT 70 W @ TC = 25 °C - defines maximum continuous power dissipation with heatsink
Rthj-pcb 50 °C/W on 1-inch² FR-4, 2 oz Cu - quantifies thermal path efficiency without external heatsink

Pinout & Package

DPAK (TO-252) package: surface-mount, three-terminal, thermally enhanced plastic housing with exposed drain pad for PCB heat spreading.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate High-impedance control input; requires 10 V for full enhancement; RG = 5.8 Ω intrinsic resistance affects gate loop damping
2 (D) Drain Main high-voltage power terminal; connected to exposed pad for thermal conduction and current return path
3 (S) Source Power ground reference; ties to gate driver return and sense resistor; critical for stable switching waveform integrity

Key Features

Feature Design Value
100% avalanche tested Guarantees ruggedness under unclamped inductive switching (EAS = 150 mJ) without derating
Low gate charge (Qg = 19 nC) Reduces gate driver IC stress and enables higher-frequency operation in 65–100 kHz SMPS
Low Ciss/Coss ratio Improves efficiency in ZVS/ZCS resonant converters by minimizing capacitive energy loss
MDmesh™ II vertical structure Delivers industry-leading RDS(on) × Qg figure-of-merit (≈7.5 Ω·nC) for high-power density designs
ECOPACK® compliant Meets RoHS and halogen-free requirements for industrial and consumer end-equipment

Applications

Industrial AC-DC Adapters Server PSU Primary Switch

Use Scenario: 300 W universal-input offline flyback converter for DIN-rail mounted PLC power supplies.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with 500 V blocking capability.

Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >90% efficiency at full load without active cooling.

Use Scenario: 80 PLUS Gold-certified 1 kW server power supply using active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in primary bridge leg handling 400 V DC bus with repetitive 10 µs pulse width.

Use Value: Avalanche-rated design withstands voltage spikes during clamp capacitor discharge, eliminating need for snubbers.

LED Streetlight Drivers Industrial Motor Drive Inverters

Use Scenario: Outdoor LED streetlight with 0–10 V dimming and surge-protected 230 V AC input.

IC Role / Device Role / Timing Role: PFC boost switch in continuous conduction mode (CCM) at 65 kHz.

Use Value: Fast body diode (trr = 230 ns) minimizes reverse recovery loss and EMI generation in high-current boost stage.

Use Scenario: 3-phase 750 W variable frequency drive for HVAC compressors with IGBT gate drive isolation.

IC Role / Device Role / Timing Role: High-side bootstrap switch in isolated gate driver circuit powering IGBT half-bridge.

Use Value: Low Coss(eq) (210 pF) ensures stable bootstrap capacitor recharge across wide duty cycle range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP11NM50N Same die, TO-220 through-hole package; Rthj-case = 1.79 °C/W vs. 5 °C/W for DPAK Better thermal performance with heatsink; unsuitable for space-constrained SMT layouts Select when board-level thermal management allows mechanical heatsinking and lead-free reflow is not required
FDPF11N50T ON Semiconductor SuperFET II; RDS(on) = 0.48 Ω, Qg = 22 nC, Coss(eq) = 240 pF Slightly higher switching loss due to +16% Qg and +14% Coss(eq); identical 500 V rating Choose if dual-sourcing is needed and minor efficiency penalty (<0.3%) is acceptable in cost-sensitive designs

Compared with STP11NM50N, STD11NM50N trades thermal performance for SMT manufacturability and lower assembly cost; versus FDPF11N50T, it delivers superior switching efficiency via lower Qg and Coss(eq), critical in high-frequency PFC stages.

Availability

STD11NM50N is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED streetlight drivers, and server PSU primary switches requiring stable component supply and long-term production continuity.

Supply support for STD11NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STD11NM50N belongs to ST's MDmesh™ II high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching power supplies and PFC circuits.

FAQ

What is the maximum continuous drain current for STD11NM50N at 100 °C case temperature?

The maximum continuous drain current is 6 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package (Rthj-case = 5 °C/W) and ensures safe operation below 150 °C junction temperature under sustained load conditions.

Does STD11NM50N require a negative gate voltage for reliable turn-off in high-noise environments?

No. The gate threshold voltage (VGS(th)) ranges from 2 V to 4 V, and the device fully turns off with VGS = 0 V. However, applying –5 V to –10 V improves noise immunity and prevents spurious turn-on during high dv/dt events in bridge configurations.

Can STD11NM50N be used in zero-voltage switching (ZVS) resonant converters?

Yes. Its low Coss(eq) (210 pF) and soft-recovery body diode (Qrr = 2.1 µC) make it suitable for LLC and phase-shifted full-bridge topologies where ZVS is achieved across wide load ranges and input voltages.

Is the STD11NM50N RoHS-compliant and halogen-free?

Yes. It meets ECOPACK® specifications per ST's environmental compliance program, including RoHS Directive 2011/65/EU and halogen-free requirements (≤900 ppm bromine, ≤900 ppm chlorine), verified in the official package mechanical data section.

STD11NM50N Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
547 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
70W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD11NM50N FAQ

1.How can I place an order for STD11NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD11NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD11NM50N reliable?

The price and inventory of STD11NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD11NM50N is usually 5 days.

3.What payment methods are accepted for STD11NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD11NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD11NM50N?

STD11NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD11NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD11NM50N?

For technical support, including STD11NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD11NM50N requirements.

6.How does Aetrix verify that STD11NM50N is sourced from the original manufacturer or authorized distributors?

All STD11NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD11NM50N meets industry standards.

7.What is the process for return or replacement of STD11NM50N?

All STD11NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STD11NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD11NM50N part is unused and in its original packaging.

Return procedure for STD11NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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