Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD11NM60N

Name: STD11NM60N
Brand: STMicroelectronics
SKU: STD11NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STD11NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD11NM60N.pdf

Description:: MOSFET N-CH 600V 10A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,138

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STD11NM60N from STMicroelectronics is an N-channel 600 V, 10 A, 0.37 Ω (typ) MDmesh™ II Power MOSFET in DPAK package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (31 nC), and low input capacitance (850 pF), enabling fast switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STD11NM60N datasheet, STD11NM60N pinout, STD11NM60N application, or STD11NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.37 Ω R_DS(on) at V_GS = 10 V, 31 nC total gate charge, 150 °C max junction temperature, and DPAK thermal resistance of 62.5 °C/W (junction-to-ambient).

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its optimized cell design delivers low R_DS(on) × Q_g figure-of-merit (11.4 Ω·nC), critical for high-frequency hard-switched topologies.

The integrated source-drain diode exhibits 340 ns reverse recovery time (T_J = 25 °C) and 3.26 µC Q_rr, supporting moderate-speed synchronous rectification and flyback snubberless operation. Gate threshold voltage is tightly specified at 2–4 V, ensuring robust noise immunity in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full-line transient surges in universal-input 85–265 VAC offline converters without clamping.
R_DS(on) max	0.45 Ω @ V_GS = 10 V - Enables ≤4.5 W conduction loss at 10 A DC, suitable for continuous 100–200 W power stages.
Q_g	31 nC - Reduces gate drive power and enables use with low-current drivers (e.g., UC384x family) at 100–300 kHz.
I_D (cont.)	10 A @ T_C = 25 °C - Supports peak load currents up to 10 A with appropriate heatsinking on PCB copper pour.
E_AS	200 mJ - Allows unclamped inductive switching in relay drivers or solenoid controls without external snubbers.
T_J max	150 °C - Permits operation in enclosed industrial enclosures with ambient temperatures up to 75 °C under derated conditions.
R_thj-amb	62.5 °C/W - Requires ≥10 cm² 2-oz copper pad with thermal vias for safe 90 W dissipation at T_A = 50 °C.

Pinout & Package

STD11NM60N is housed in a surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low thermal resistance path to PCB and serves as primary heat sink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage current; driven by 10 V logic-level signal for full enhancement.
2 (Drain)	Power output node	Internally connected to large copper die paddle; must be routed to high-voltage DC bus with creepage clearance ≥4 mm.
3 (Source)	Reference return	Common return for gate driver and load current; forms Kelvin sense path for accurate current monitoring when separated from power ground.

Key Features

Feature	Design Value
100% avalanche rated	Guarantees single-pulse energy handling up to 200 mJ without degradation-eliminates need for overvoltage clamping in flyback transformers.
Low Q_g/C_iss ratio	31 nC gate charge with only 850 pF input capacitance enables faster turn-on while minimizing Miller-induced shoot-through risk.
MDmesh™ II vertical structure	Reduces R_DS(on) × area by 40% vs first-gen devices-delivers 0.37 Ω in compact DPAK, avoiding larger TO-220 footprint.
Low R_thj-pcb	30 °C/W junction-to-PCB thermal resistance allows direct thermal coupling to 2-layer board copper, reducing heatsink dependency.
ECOPACK® compliant	Meets RoHS 2011/65/EU and halogen-free requirements-qualified for industrial and consumer equipment with environmental compliance mandates.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65 W universal-input adapter operating in discontinuous conduction mode (DCM) at 65 kHz.

IC Role / Device Role / Timing Role: Main switching transistor in flyback power stage, turning on/off under PWM control from controller IC.

Use Value: 0.37 Ω R_DS(on) limits conduction loss to <1.5 W at full load; 31 nC Q_g ensures minimal gate drive loss with 100 Ω series resistor.

Use Scenario: 300 W active boost PFC front-end for PLC power supply, operating at 65 kHz with average current mode control.

IC Role / Device Role / Timing Role: High-side switch in boost converter topology, conducting during inductor charging phase.

Use Value: 600 V rating accommodates 400 V DC bus + 20% margin; 150 °C T_J max supports sustained operation at 70 °C ambient with forced air cooling.

Solar Microinverter Half-Bridge

Motor Drive Inverter Leg

Use Scenario: 250 W microinverter stage converting PV panel DC to 230 VAC grid-synchronized output using H-bridge topology.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, commutating at 20–50 kHz with dead-time controlled by gate driver.

Use Value: 340 ns t_rr minimizes body-diode conduction loss during dead-time; 200 mJ E_AS withstands inductive kickback during fault events.

Use Scenario: 1 kW BLDC motor drive for HVAC fan, using six-pack inverter with space-vector PWM at 16 kHz.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter, handling bidirectional current via internal body diode during freewheeling.

Use Value: 10 A continuous rating supports 1.2× motor stall current; DPAK package enables dense layout with shared thermal plane across all three legs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11NM60N	Same silicon die but in through-hole TO-220 package; R_thj-case = 1.38 °C/W vs 62.5 °C/W (DPAK).	Better thermal performance with heatsink; unsuitable for fully SMT production or space-constrained layouts.	Select when board-level thermal management requires mechanical heatsink attachment and manual assembly is acceptable.
FDPF12N50FT	500 V rating, 0.42 Ω R_DS(on), 28 nC Q_g; uses SuperFET® II technology, not MDmesh™.	Limited to ≤400 V DC bus applications; lower gate charge improves light-load efficiency but reduces voltage safety margin.	Choose only for cost-sensitive 230 VAC-only systems where 600 V margin is unnecessary and gate drive current is highly constrained.

Compared with STP11NM60N, STD11NM60N trades thermal performance for SMT manufacturability and board area savings; versus FDPF12N50FT, it offers higher voltage robustness and proven avalanche capability at the expense of slightly higher Q_g.

Availability

STD11NM60N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, solar microinverters, and motor drive inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STD11NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STD11NM60N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies where low R_DS(on) × Q_g and rugged avalanche performance are critical.

FAQ

What is the maximum recommended gate-source voltage for STD11NM60N?

The absolute maximum V_GS is ±25 V, but ST specifies 10 V as the standard enhancement voltage for full R_DS(on) specification. Operating above 15 V increases gate oxide stress and accelerates wear-out; 12 V is the practical upper limit for robust long-term reliability in industrial designs.

Can STD11NM60N replace STD10NM60N in existing designs?

Yes-both share identical DPAK package, pinout, and 600 V rating, but STD11NM60N has lower R_DS(on) (0.37 Ω vs 0.42 Ω) and higher I_D (10 A vs 9 A). Thermal design margins improve, though gate drive requirements remain unchanged due to matched Q_g (31 nC).

Does STD11NM60N require a gate resistor for EMI suppression?

A 10–47 Ω gate resistor is recommended to dampen high-frequency ringing caused by parasitic L_g-C_iss resonance. Values below 10 Ω increase dv/dt stress and EMI; above 100 Ω degrade switching speed and increase switching loss-ST's reference design uses 22 Ω for 65 kHz flyback operation.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No-the 340 ns t_rr and 3.26 µC Q_rr cause excessive reverse recovery loss at >200 kHz. For LLC synchronous rectification, discrete Schottky or GaN FETs with <50 ns t_rr are required; STD11NM60N's diode is intended only for freewheeling or clamping in hard-switched topologies.

STD11NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD11NM60N FAQ

1.How can I place an order for STD11NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD11NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD11NM60N reliable?

The price and inventory of STD11NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD11NM60N is usually 5 days.

3.What payment methods are accepted for STD11NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD11NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD11NM60N?

STD11NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD11NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD11NM60N?

For technical support, including STD11NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD11NM60N requirements.

6.How does Aetrix verify that STD11NM60N is sourced from the original manufacturer or authorized distributors?

All STD11NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD11NM60N meets industry standards.

7.What is the process for return or replacement of STD11NM60N?

All STD11NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STD11NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD11NM60N part is unused and in its original packaging.

Return procedure for STD11NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…