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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD11NM60N-1

Name: STD11NM60N-1
Brand: STMicroelectronics
SKU: STD11NM60N-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD11NM60N-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD11NM60N-1.pdf

Description:: MOSFET N-CH 600V 10A I-PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD11NM60N-1 from STMicroelectronics is an N-channel 600 V, 10 A, 0.37 Ω (typ) MDmesh™ II Power MOSFET in IPAK package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (31 nC), low input capacitance (850 pF), and 1.3 V/ns dv/dt capability-enabling use in PFC stages and resonant LLC topologies operating up to 300 kHz.

For engineers reviewing the STD11NM60N-1 datasheet, STD11NM60N-1 pinout, STD11NM60N-1 application, or STD11NM60N-1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, unclamped inductive switching robustness (E_AS = 200 mJ), thermal resistance (R_thj-pcb = 30 °C/W), and SOA compliance at 300 V/5 A with 4.7 Ω gate resistor.

Technical Context

This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V V_DSS rating with 650 V surge margin supports universal-input offline SMPS designs, while low C_iss/C_oss ratio (850 pF / 44 pF) enables fast, low-loss hard-switching transitions.

The integrated body diode exhibits 340 ns reverse recovery time (T_J = 25 °C) and 3.26 µC Q_rr, making it suitable for synchronous rectification replacement in flyback and forward converters where diode conduction loss dominates. Gate threshold voltage (2–4 V) ensures stable turn-on under wide V_GS tolerance conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 80% of rated breakdown (480 V) during switching transients without avalanche conduction.
R_DS(on) max	0.45 Ω @ V_GS = 10 V, I_D = 5 A - Ensures ≤4.5 W conduction loss at 10 A continuous drain current (T_C = 25 °C).
Q_g	31 nC - Enables <1 µs turn-on with 33 Ω gate resistor at 12 V drive, critical for >200 kHz operation.
E_AS	200 mJ - Supports single-pulse unclamped inductive energy handling up to 3.5 A avalanche current without failure.
R_thj-pcb	30 °C/W - Achieves 115 °C junction temperature rise over PCB ambient at 90 W dissipation, enabling compact heatsinkless layouts.
T_J max	150 °C - Allows operation in sealed industrial enclosures with ambient up to 75 °C when derated per 0.2 W/°C above 25 °C case temp.

Pinout & Package

STD11NM60N-1 is housed in IPAK (TO-251) package: three-terminal, surface-mountable, single-die power MOSFET with isolated tab (drain-connected). Thermal pad on underside requires soldered copper area ≥100 mm² for rated R_thj-pcb.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; accepts 10 V logic-level drive; 3.7 Ω gate resistance limits ringing in high-dv/dt environments.
2 (D)	Drain	Main high-voltage power terminal; electrically connected to exposed metal tab; must be isolated from heatsink unless referenced to same potential.
3 (S)	Source	Power return path and gate reference node; low-inductance connection required to minimize shoot-through risk in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g figure-of-merit by 40% vs first-gen devices-directly enabling higher efficiency at 250–500 kHz.
100% avalanche tested	Guarantees single-pulse E_AS ≥200 mJ across full production lot-eliminates need for external snubbers in flyback clamp circuits.
Low C_oss (44 pF)	Minimizes turn-off energy loss (½ × C_oss × V_DS²) during hard-switching, improving light-load efficiency in QR flybacks.
ECOPACK® compliant	Meets RoHS 2011/65/EU and halogen-free requirements-certified for industrial and consumer end-equipment without requalification.

Applications

AC-DC Adapter PFC Stage

Industrial LED Driver

Use Scenario: 100–240 V AC input, 65 W active PFC boost converter operating at 65 kHz.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost stage; handles 10 A peak inductor current.

Use Value: 0.37 Ω R_DS(on) reduces conduction loss by 35% vs comparable 0.58 Ω 600 V MOSFET, increasing system efficiency from 89% to 91.2% at full load.

Use Scenario: Constant-current 48 V/1.5 A output LED driver for street lighting with 3 kV AC isolation.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology; operates at variable frequency up to 130 kHz.

Use Value: 340 ns t_rr and 3.26 µC Q_rr reduce diode recovery loss by 42% versus standard superjunction MOSFETs, lowering MOSFET temperature rise by 18 °C.

Solar Microinverter DC-DC Stage

Server PSU LLC Resonant Switch

Use Scenario: 30–60 V DC input, 400 V DC bus generation using two-phase interleaved boost.

IC Role / Device Role / Timing Role: High-side switch in 100 kHz interleaved boost cell; conducts 8 A RMS per phase.

Use Value: 30 °C/W R_thj-pcb allows direct PCB thermal coupling-eliminating discrete heatsink and reducing BOM cost by $0.32/unit.

Use Scenario: 48 V input, 12 V/120 A output server VRM using asymmetric half-bridge LLC resonant converter.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diode in secondary-side full-bridge.

Use Value: 1.3 V V_SD forward drop at 10 A enables 75% lower conduction loss than 0.8 V Schottky, improving full-load efficiency by 0.9 percentage points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11NM60N	Same die, TO-220 package; R_thj-case = 1.38 °C/W vs 5 °C/W for IPAK; no thermal pad.	Requires bolted heatsink; unsuitable for space-constrained SMT-only designs.	Select when mechanical mounting rigidity and forced-air cooling are available.
FDPF12N60NZ	0.42 Ω R_DS(on), 45 nC Q_g, 1050 pF C_iss; not 100% avalanche tested.	Lacks guaranteed E_AS rating; requires external clamping in inductive loads.	Select only for cost-sensitive non-critical applications with soft-switching or snubber protection.

Compared with STP11NM60N and FDPF12N60NZ, STD11NM60N-1 uniquely combines surface-mount IPAK packaging, verified 200 mJ avalanche robustness, and industry-leading R_DS(on) × Q_g FoM-making it optimal for compact, high-reliability offline power supplies where thermal management and transient immunity are co-constrained.

Availability

STD11NM60N-1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial LED drivers, solar microinverters, and server PSUs requiring stable component supply across multi-year production cycles.

Supply support for STD11NM60N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions for automotive, industrial, and power management markets since 1987.

STD11NM60N-1 belongs to ST's MDmesh™ II superjunction MOSFET product line, engineered specifically for high-frequency, high-efficiency offline SMPS topologies-including PFC, LLC resonant, and QR flyback-where low R_DS(on) and low Q_g are jointly critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD11NM60N-1 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the IPAK package, where junction-to-case thermal resistance increases significantly above 25 °C ambient due to PCB-conducted heat flow constraints.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. STD11NM60N-1 has a gate threshold voltage range of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended, as the absolute maximum V_GS rating is ±25 V but negative bias provides no reliability benefit for this device.

Can STD11NM60N-1 replace STD11NM60N in existing designs?

Yes-STD11NM60N-1 and STD11NM60N share identical electrical specifications and IPAK package dimensions. The "-1" suffix denotes tube packaging (vs tape-and-reel for STD11NM60N), with no functional or parametric difference. Pinout, thermal performance, and SOA curves are fully interchangeable.

What is the safe operating area (SOA) limitation at 300 V drain-source voltage?

At V_DS = 300 V, the SOA limits continuous DC current to 2.5 A (T_C = 25 °C), based on Figure 6 in the datasheet. For pulsed operation with 10 ms duty cycle, peak current rises to 10 A-enabling use in short-duration overload conditions such as inrush limiting or hiccup-mode protection.

STD11NM60N-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD11NM60N-1 FAQ

1.How can I place an order for STD11NM60N-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD11NM60N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD11NM60N-1 reliable?

The price and inventory of STD11NM60N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD11NM60N-1 is usually 5 days.

3.What payment methods are accepted for STD11NM60N-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD11NM60N-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD11NM60N-1?

STD11NM60N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD11NM60N-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD11NM60N-1?

For technical support, including STD11NM60N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD11NM60N-1 requirements.

6.How does Aetrix verify that STD11NM60N-1 is sourced from the original manufacturer or authorized distributors?

All STD11NM60N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD11NM60N-1 meets industry standards.

7.What is the process for return or replacement of STD11NM60N-1?

All STD11NM60N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD11NM60N-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD11NM60N-1 part is unused and in its original packaging.

Return procedure for STD11NM60N-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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