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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD11NM65N

Name: STD11NM65N
Brand: STMicroelectronics
SKU: STD11NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD11NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD11NM65N.pdf

Description:: MOSFET N CH 650V 11A DPAK

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Product details

Overview

STD11NM65N from STMicroelectronics is an N-channel 650 V, 425 mΩ (typ.), 11 A MDmesh II Power MOSFET in DPAK (TO-252) package, designed for high-efficiency switching converters requiring low gate charge (29 nC), low input capacitance (800 pF), and 100% avalanche-tested ruggedness. It operates with ±25 V gate drive and delivers 110 W total power dissipation at T_C = 25 °C.

For engineers reviewing the STD11NM65N datasheet, STD11NM65N pinout, STD11NM65N application, or STD11NM65N equivalent, this device is selected for high-voltage flyback, LLC resonant, and PFC stages where low R_DS(on), fast switching (t_r = 10.8 ns), and robust diode recovery (Q_rr = 4.4 µC) are critical to efficiency and reliability.

Technical Context

This MOSFET employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 650 V V_DS rating and 147 mJ single-pulse avalanche energy enable operation in unclamped inductive loads without external snubbers.

The device integrates a fast-recovery body diode (t_rr = 418 ns, I_RRM = 21 A) and exhibits low C_oss eq. (133 pF) across 0–520 V, supporting high-frequency ZVS/ZCS topologies. Gate threshold voltage (2–4 V) and normalized R_DS(on) stability over −50 to 150 °C ensure predictable performance in wide-temperature industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports primary-side switching in 400 V AC-input PFC and offline SMPS without derating.
R_DS(on) max	455 mΩ at V_GS = 10 V, I_D = 5.5 A - Enables <1.5 W conduction loss at 11 A DC, reducing heatsink requirements.
Q_g	29 nC - Low gate charge allows efficient driving with standard 1 A gate drivers at >300 kHz.
C_iss	800 pF at V_DS = 25 V - Minimizes Miller effect and improves EMI behavior in hard-switched converters.
E_AS	147 mJ - Confirmed avalanche ruggedness supports reliable operation during transient overloads.
t_r/t_f	10.8 ns / 47 ns - Fast edge rates reduce switching transition time, lowering turn-on/turn-off losses.
R_thJC	1.14 °C/W - Enables 95 °C junction rise with only 107 W dissipation at case temperature of 25 °C.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended lead configuration; JEDEC MO-247 compliant; RoHS-compliant ECOPACK2 grade.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current path output terminal	Electrically connected to drain; must be soldered to large copper pour for thermal management and low-inductance return path.
Pin 1 (Gate)	Control input	Low-impedance gate terminal (R_g = 4.2 Ω); requires <10 V drive for full enhancement; sensitive to ESD.
Pin 3 (Source)	Reference node and current return	Common source node for gate drive loop; layout must minimize inductance to prevent ringing and false turn-on.

Key Features

Feature	Design Value
MDmesh II vertical structure	Reduces specific on-resistance by 30% vs. planar MOSFETs at same voltage class, enabling smaller die size and lower cost per amp.
100% avalanche tested	Every unit validated for repetitive and non-repetitive avalanche events up to 3 A, ensuring field reliability in inductive switching.
Low C_oss eq. (133 pF)	Minimizes stored output capacitance energy (E_oss = 3.5 µJ at 520 V), directly improving light-load efficiency in resonant converters.
Fast body diode (Q_rr = 4.4 µC)	Reduces reverse recovery loss and associated EMI in synchronous rectification and half-bridge freewheeling paths.
Thermal resistance R_thJC = 1.14 °C/W	Allows direct mounting to heatsink via tab; enables >90 W continuous power in compact DPAK footprint without forced air.

Applications

AC-DC Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 150–300 W universal-input flyback converter with active clamp.

IC Role / Device Role / Timing Role: High-voltage switching element handling 650 V blocking and 11 A peak current during PWM cycles.

Use Value: Low Q_g and C_iss reduce driver loss and improve cross-regulation; avalanche rating eliminates need for clamping circuits.

Use Scenario: Upper-leg switch in 3-phase IGBT gate driver auxiliary supply with 400 V DC bus.

IC Role / Device Role / Timing Role: Isolated bootstrap supply FET delivering regulated 15 V to high-side driver ICs.

Use Value: 650 V rating ensures margin against bus transients; fast t_f minimizes shoot-through risk during level-shifting transitions.

Telecom Rectifier

Solar Microinverter

Use Scenario: Active OR-ing FET in redundant 48 V telecom rectifier module with hot-swap capability.

IC Role / Device Role / Timing Role: Low-loss bidirectional current path controlled by external sense amplifier and comparator.

Use Value: 425 mΩ typ. R_DS(on) limits forward drop to <5 mV at 11 A, reducing conduction loss and thermal stress.

Use Scenario: DC-link switch in transformerless microinverter H-bridge stage interfacing PV panel to grid.

IC Role / Device Role / Timing Role: High-side switching device operating at 16–20 kHz with zero-voltage switching assistance.

Use Value: Low C_oss eq. and fast diode enable soft switching down to light load, meeting EN 62109 leakage current limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11NM65N	Same silicon, but in TO-220 package; higher R_thJA (62 °C/W vs. 50 °C/W) and no exposed tab for PCB thermal relief.	Better suited for prototyping or low-volume through-hole assembly; less optimal for high-density SMT layouts.	Select when mechanical mounting flexibility outweighs thermal density requirements.
IPP65R190C7	650 V, 190 mΩ (typ.), 11 A CoolMOS C7; lower R_DS(on) but higher Q_g (44 nC) and C_iss (1250 pF).	Higher efficiency at medium load, but increased gate drive loss and EMI filtering burden above 200 kHz.	Prefer for fixed-frequency 65–100 kHz PFC where conduction loss dominates; avoid in >250 kHz resonant designs.

Compared with STP11NM65N, STD11NM65N offers superior thermal performance in SMT layouts and lower profile; versus IPP65R190C7, it trades higher R_DS(on) for significantly lower gate charge and capacitance-favoring high-frequency, space-constrained applications.

Availability

STD11NM65N is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, telecom rectifiers, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD11NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD11NM65N supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS5257 Rev 5. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries under sustained high-temperature conditions.

Does the body diode support synchronous rectification in LLC resonant converters?

Yes-the source-drain diode has t_rr = 418 ns and Q_rr = 4.4 µC at T_J = 25 °C, enabling use in self-driven synchronous rectification schemes. However, its V_SD = 1.6 V at I_SD = 11 A means external Schottky diodes may still be preferred for ultra-low forward drop at light loads.

Can STD11NM65N replace STD10NF20 in a 200 V design?

No-STD11NM65N is rated for 650 V V_DS but has higher R_DS(on) (455 mΩ) and gate charge (29 nC) than STD10NF20 (200 V, 220 mΩ, 12 nC). Substituting it would increase conduction and switching losses unnecessarily; it is not a drop-in replacement for lower-voltage applications.

Is the DPAK package offered in both type A2 and type C3 variants for this part?

Yes-DS5257 Rev 5 explicitly lists both DPAK (TO-252) type A2 and type C3 mechanical data for STD11NM65N. Type A2 features a thicker molded compound and different leadframe geometry; type C3 offers tighter dimensional tolerances and optimized thermal pad definition for automated optical inspection compatibility.

STD11NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 455mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD11NM65N FAQ

1.How can I place an order for STD11NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD11NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD11NM65N reliable?

The price and inventory of STD11NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD11NM65N is usually 5 days.

3.What payment methods are accepted for STD11NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD11NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD11NM65N?

STD11NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD11NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD11NM65N?

For technical support, including STD11NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD11NM65N requirements.

6.How does Aetrix verify that STD11NM65N is sourced from the original manufacturer or authorized distributors?

All STD11NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD11NM65N meets industry standards.

7.What is the process for return or replacement of STD11NM65N?

All STD11NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STD11NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD11NM65N part is unused and in its original packaging.

Return procedure for STD11NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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