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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD120N4F6

Name: STD120N4F6
Brand: STMicroelectronics
SKU: STD120N4F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD120N4F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD120N4F6.pdf

Description:: MOSFET N-CH 40V 80A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD120N4F6 from STMicroelectronics is an automotive-grade N-channel Power MOSFET using STripFET™ F6 DeepGATE™ technology, rated for 40 V V_DS, 3.5 mΩ typ. R_DS(on) at V_GS = 10 V and 40 A, with 80 A continuous drain current (T_C = 25 °C), housed in a DPAK (TO-252) package. It serves as a high-efficiency main switch in 12 V automotive power rails.

For engineers reviewing the STD120N4F6 datasheet, STD120N4F6 pinout, STD120N4F6 application, or STD120N4F6 equivalent, this device is selected for low-conduction-loss switching in engine control units, body electronics, and DC-DC converters where AEC-Q101 qualification, avalanche ruggedness, and gate drive efficiency are critical.

Technical Context

This MOSFET employs 6th-generation STripFET™ DeepGATE™ cell architecture to minimize R_DS(on) and gate charge simultaneously. Its optimized trench-gate structure achieves 3.5 mΩ typical on-resistance while maintaining Q_g = 65 nC and Q_gd = 16 nC - enabling fast, low-loss switching in hard-switched topologies.

The device features a robust intrinsic body diode with t_rr = 40 ns and Q_rr = 56 nC under defined conditions (I_SD = 80 A, di/dt = 100 A/µs), supporting synchronous rectification and freewheeling in inductive loads without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive systems including load-dump transients up to ISO 7637-2 Pulse 5a.
R_DS(on) typ.	3.5 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1.4 W conduction loss at 80 A, reducing heatsink requirements in compact modules.
I_D cont.	80 A at T_C = 25 °C - Supports high-current motor drivers and solenoid controls without derating at board-level cooling.
Q_g	65 nC - Low gate charge reduces driver IC power dissipation and enables use of cost-effective 1-A gate drivers.
E_AS	394 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching faults in unclamped circuits.
t_rr	40 ns - Fast reverse recovery minimizes switching losses and voltage overshoot during diode commutation.
R_thj-case	1.36 °C/W (DPAK) - Thermal resistance enables >70 W power dissipation with standard copper pour, simplifying thermal layout.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal outline with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to ground or return path; carries full load current with minimal parasitic inductance.
2 (Drain / Tab)	Drain terminal & thermal pad	High-current output node and primary heat sink interface; must be soldered to ≥1 in² 2 oz. Cu PCB area for rated performance.
3 (Gate)	Control input	CMOS-compatible gate requiring ≤±20 V V_GS; sensitive to ESD; requires gate resistor (RG = 4.7 Ω typical) for controlled dV/dt.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood operation (−40 °C to +175 °C junction), including temperature cycling, HTRB, and UHAST.
Very low R_DS(on)	3.5 mΩ typ. delivers lowest conduction loss among 40 V DPAK MOSFETs, improving system efficiency by up to 0.8% in 12 V starter relays.
Low Q_gd/Q_g ratio	16/65 = 0.25 - Reduces Miller plateau time and improves immunity to dv/dt-induced turn-on in high-noise environments.
High avalanche ruggedness	40 A repetitive I_AR and 394 mJ E_AS allow safe operation in unclamped inductive switching without snubbers.
Optimized body diode	Q_rr = 56 nC and I_RRM = 2.8 A support efficient freewheeling in BLDC motor half-bridges with minimal voltage spike.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Body Control Module (BCM)

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 8 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization; operates in hard-switched PWM mode at 1–10 kHz.

Use Value: 3.5 mΩ R_DS(on) limits resistive heating to <0.27 W at 8 A, eliminating need for active cooling in space-constrained ECU housings.

Use Scenario: Driving 12 V LED headlamps, window lift motors, and HVAC actuators in centralized BCMs.

IC Role / Device Role / Timing Role: Low-side load switch managing up to 80 A aggregate current across multiple channels.

Use Value: AEC-Q101 qualification and 175 °C T_j rating ensure reliability over 15-year vehicle lifetime despite ambient under-hood temperatures up to 125 °C.

12 V–5 V Automotive DC-DC Converter

Start-Stop System Solenoid Control

Use Scenario: Synchronous rectifier in buck converter supplying 5 V/15 A to infotainment ECUs from 12 V battery rail.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–500 kHz with zero-voltage switching assist.

Use Value: 40 ns t_rr and low Q_rr reduce dead-time losses and EMI generation, improving conversion efficiency to >94%.

Use Scenario: Controlling 12 V starter solenoid engagement during engine restart in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current latching switch handling 60–80 A inrush and sustaining 30 A hold current.

Use Value: 394 mJ E_AS withstands repeated inductive turn-off spikes without degradation, extending solenoid driver service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.0 mΩ (typ), Q_g = 71 nC, not AEC-Q101 qualified	Suitable for industrial/commercial 12 V switching; lacks automotive stress validation and high-temp reliability data	Select only if AEC-Q101 compliance is not required and thermal margin allows 0.5 mΩ higher R_DS(on).
STL120N4F7AG	R_DS(on) = 3.2 mΩ (typ), DFN5x6 package, 65 A I_D cont., AEC-Q101 qualified	Lower R_DS(on) but limited current rating and smaller thermal footprint; requires re-layout for DFN	Prefer for space-constrained designs needing <3.5 mΩ, provided PCB copper area supports DFN thermal limits.

Compared with IRL1404ZPBF, STD120N4F6 offers guaranteed automotive reliability and lower gate charge; versus STL120N4F7AG, it trades slightly higher R_DS(on) for superior current handling and proven DPAK manufacturability in high-volume automotive assembly.

Availability

STD120N4F6 is available at Aetrix Electronics and suitable for automotive power distribution, engine management systems, and body electronics requiring stable component supply across multi-year production cycles.

Supply support for STD120N4F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD120N4F6 belongs to ST's STripFET™ F6 automotive MOSFET product line, engineered specifically for high-reliability 12 V power switching in harsh automotive environments with emphasis on low R_DS(on), fast switching, and AEC-Q101 compliance.

FAQ

What is the maximum gate-source voltage rating for STD120N4F6?

The absolute maximum V_GS is ±20 V per the datasheet's Absolute Maximum Ratings table. Operation beyond ±15 V risks permanent gate oxide damage. For reliable 12 V system design, a gate driver clamping at ±12 V or using a Zener diode (e.g., BZX84-C12) is recommended to prevent transient overvoltage.

Can STD120N4F6 replace STB120N4F6 in a PCB layout?

No - STD120N4F6 uses DPAK (TO-252) packaging while STB120N4F6 uses D²PAK (TO-263); their footprints, thermal pads, and pin spacing differ significantly. The DPAK variant has smaller body dimensions (6.2 × 6.6 mm vs. 9.35 × 10.4 mm) and different thermal pad geometry, requiring separate PCB land patterns and stencil design.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode exhibits t_rr = 40 ns and Q_rr = 56 nC under specified test conditions (I_SD = 80 A, di/dt = 100 A/µs), making it viable for synchronous rectification at ≤500 kHz in 12 V input buck converters. However, external Schottky diodes may still be preferred for ultra-low forward drop at light loads.

What is the thermal resistance from junction to PCB for STD120N4F6?

R_thj-pcb is 50 °C/W when mounted on a 1 inch², 2 oz. copper board - a standardized test condition defined in Table 3. This value assumes full-solder coverage of the exposed drain tab and no additional heatsink. Real-world performance depends on copper area, layer count, and via density beneath the tab.

STD120N4F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD120N4F6 FAQ

1.How can I place an order for STD120N4F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD120N4F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD120N4F6 reliable?

The price and inventory of STD120N4F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD120N4F6 is usually 5 days.

3.What payment methods are accepted for STD120N4F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD120N4F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD120N4F6?

STD120N4F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD120N4F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD120N4F6?

For technical support, including STD120N4F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD120N4F6 requirements.

6.How does Aetrix verify that STD120N4F6 is sourced from the original manufacturer or authorized distributors?

All STD120N4F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD120N4F6 meets industry standards.

7.What is the process for return or replacement of STD120N4F6?

All STD120N4F6 units undergo pre-shipment inspection (PSI). If there is an issue with STD120N4F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD120N4F6 part is unused and in its original packaging.

Return procedure for STD120N4F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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