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STMicroelectronics STD12N50DM2

Name: STD12N50DM2
Brand: STMicroelectronics
SKU: STD12N50DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD12N50DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD12N50DM2.pdf

Description:: MOSFET N-CH 500V 11A DPAK

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Product details

Overview

STD12N50DM2 from STMicroelectronics is an N-channel 500 V, 0.299 Ω typ. R_DS(on), 11 A MDmesh™ DM2 Power MOSFET in DPAK (TO-252) package. It integrates a fast-recovery body diode with Q_rr = 0.707 µC and t_rr = 140 ns at T_j = 25 °C, low gate charge (Q_g = 16 nC), and high dv/dt ruggedness (50 V/ns). It is designed for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STD12N50DM2 datasheet, STD12N50DM2 pinout, STD12N50DM2 application, or STD12N50DM2 equivalent, key selection criteria include its 500 V V_(BR)DSS, 0.350 Ω max R_DS(on), 100% avalanche tested rating, 40 V/ns diode recovery dv/dt capability, and DPAK thermal resistance of 1.14 °C/W (j-case).

Technical Context

This device belongs to ST's MDmesh DM2 series optimized for high-voltage, high-frequency switching. Its internal structure combines trench-gate superjunction technology with a tailored body diode exhibiting low Q_rr and t_rr, enabling reduced switching losses in hard- and soft-switching topologies.

The MOSFET supports continuous drain current up to 11 A at T_C = 25 °C and 8 A at T_C = 100 °C, with pulsed current capability of 44 A. Its 1.14 °C/W junction-to-case thermal resistance and 50 °C/W junction-to-PCB (1-inch² FR-4, 2 oz Cu) enable effective thermal management in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands DC bus voltages up to 400 V in ZVS converters with margin
R_DS(on) max	0.350 Ω - Limits conduction loss to ≤3.8 W at 11 A ID, critical for efficiency at high load
Q_g	16 nC - Enables fast turn-on with low gate drive power, reducing driver stress
t_rr / Q_rr	140 ns / 0.707 µC - Minimizes reverse recovery loss and EMI in bridge-leg commutation
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during switching without spurious turn-on
E_AS	320 mJ - Supports unclamped inductive switching events without failure
R_thj-case	1.14 °C/W - Allows ≥96 W power dissipation before reaching 150 °C junction limit at 25 °C case

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, single-die layout with exposed drain pad for thermal and electrical connection. Standard pin assignment confirmed per Figure 20 and Table 9 in DocID026806 Rev 2.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Exposed metal pad - must be soldered to large copper area for thermal conduction and low-inductance return path
Source	Reference node for gate control and current return	Low-impedance source connection; ties gate drive reference and power ground in half-bridge layouts
Gate	Control terminal	High-impedance input requiring <16 nC charge; sensitive to ringing - needs local RC snubber or gate resistor ≥4.7 Ω

Key Features

Feature	Design Value
Fast-recovery body diode	Q_rr = 0.707 µC enables efficient synchronous rectification and reduces shoot-through risk in LLC resonant converters
Low gate charge (Q_g)	16 nC allows use of low-power gate drivers (e.g., STGAP2SIC) without excessive heat generation
High dv/dt ruggedness	50 V/ns rating ensures immunity to false triggering in high dV/dt environments like motor drives and PFC stages
100% avalanche tested	Each unit validated for single-pulse E_AS = 320 mJ - guarantees robustness under transient overvoltage conditions
Zener-protected gate	±25 V V_GS rating with integrated protection prevents gate oxide rupture during handling or layout ESD events

Applications

Industrial SMPS

Server PSU

Use Scenario: 3.3 kW active clamp forward converter operating at 200 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch with ZVS-assisted turn-on and controlled body diode commutation.

Use Value: Low Q_rr and 50 V/ns dv/dt ruggedness reduce switching loss by 18% vs. standard MDmesh D series, improving full-load efficiency to 95.2%.

Use Scenario: 1.5 kW telecom rectifier using asymmetric half-bridge topology with 380 V DC link.

IC Role / Device Role / Timing Role: Low-side switch managing synchronous rectification and freewheeling paths.

Use Value: 0.299 Ω typ. R_DS(on) limits conduction loss to 3.6 W at 11 A, enabling 25 °C lower MOSFET case temperature vs. 0.45 Ω alternatives.

Solar Microinverter

EV On-board Charger

Use Scenario: 300 W two-stage microinverter with interleaved boost + H-bridge inverter stage.

IC Role / Device Role / Timing Role: Boost switch handling 450 V DC link and 12 A peak current at 150 kHz.

Use Value: 100% avalanche testing ensures reliability during PV string voltage surges; 140 ns t_rr suppresses diode-induced voltage spikes across gate driver.

Use Scenario: 6.6 kW single-phase OBC using dual-phase interleaved PFC followed by CLLC resonant DC/DC.

IC Role / Device Role / Timing Role: Resonant tank switch in CLLC half-bridge leg, operating with zero-voltage switching and body-diode conduction.

Use Value: Fast-recovery diode with Q_rr = 0.707 µC minimizes dead-time loss and improves light-load efficiency by 2.3%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N50DM2	TO-220 package; identical die, higher R_thj-case (1.5 °C/W); no exposed drain tab	Better suited for forced-air-cooled industrial supplies where PCB space is less constrained	Select when mechanical mounting flexibility and heatsink compatibility outweigh thermal performance needs
IPP60R190C7	600 V, 0.190 Ω R_DS(on), 11 A, CoolMOS™ C7; higher Q_g (24 nC), slower t_rr (220 ns)	Preferred in high-density 600 V PFC stages but requires stronger gate drive and exhibits higher diode loss	Choose only if 600 V rating is mandatory and system-level EMI filtering can accommodate higher Q_rr

Compared with STP12N50DM2 and IPP60R190C7, STD12N50DM2 delivers superior thermal performance in surface-mount designs and lowest body-diode recovery loss among 500 V-class devices - making it optimal for space-constrained, high-frequency ZVS converters.

Availability

STD12N50DM2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, solar microinverters, and EV on-board chargers requiring stable component supply and long-term lifecycle support.

Supply support for STD12N50DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STD12N50DM2 belongs to the MDmesh™ DM2 product line, engineered specifically for high-efficiency, high-frequency AC/DC and DC/DC conversion in telecom, server, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD12N50DM2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures.

Does this MOSFET require a negative gate turn-off voltage?

No. The STD12N50DM2 operates with 0 V to +10 V gate drive for full enhancement and has no requirement for negative gate bias. Its ±25 V V_GS rating and Zener protection allow safe operation with standard 0–12 V gate drivers without external clamping.

Can the body diode be used for synchronous rectification in a flyback converter?

Yes - the fast-recovery body diode (t_rr = 140 ns, Q_rr = 0.707 µC) is characterized for controlled conduction and low loss in discontinuous conduction mode (DCM) flyback secondary-side switching, though discrete Schottky diodes remain preferred for >100 kHz operation due to lower forward drop.

Is the DPAK footprint compatible with standard TO-252 land patterns?

Yes - the STD12N50DM2 uses the standard DPAK (TO-252) Type A2 outline per Figure 20 and Table 9. Its recommended PCB footprint matches IPC-7351B TO-252A density level A, with 5.2 mm × 6.5 mm pad dimensions and 2.28 mm lead pitch.

STD12N50DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 628 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD12N50DM2 FAQ

1.How can I place an order for STD12N50DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD12N50DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD12N50DM2 reliable?

The price and inventory of STD12N50DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD12N50DM2 is usually 5 days.

3.What payment methods are accepted for STD12N50DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD12N50DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD12N50DM2?

STD12N50DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD12N50DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD12N50DM2?

For technical support, including STD12N50DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD12N50DM2 requirements.

6.How does Aetrix verify that STD12N50DM2 is sourced from the original manufacturer or authorized distributors?

All STD12N50DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD12N50DM2 meets industry standards.

7.What is the process for return or replacement of STD12N50DM2?

All STD12N50DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STD12N50DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD12N50DM2 part is unused and in its original packaging.

Return procedure for STD12N50DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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