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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD12N60DM2AG

Name: STD12N60DM2AG
Brand: STMicroelectronics
SKU: STD12N60DM2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD12N60DM2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD12N60DM2AG.pdf

Description:: AUTOMOTIVE-GRADE N-CHANNEL 600 V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD12N60DM2AG from STMicroelectronics is an AEC-Q101-qualified N-channel 600 V, 10 A Power MOSFET in DPAK (TO-252) package, featuring 430 mΩ max R_DS(on), 14.5 nC total gate charge, and fast-recovery body diode with 80 ns trr at 25 °C. It delivers high dv/dt ruggedness (50 V/ns), 100% avalanche tested performance, and is engineered for ZVS phase-shift converters and full-bridge topologies in automotive and industrial power supplies.

For engineers reviewing the STD12N60DM2AG datasheet, STD12N60DM2AG pinout, STD12N60DM2AG application, or STD12N60DM2AG equivalent, key selection criteria include its low Q_rr (250 nC), Zener-protected gate, 1.14 °C/W R_thJC, and AEC-Q101 qualification for under-hood switching applications.

Technical Context

This MDmesh DM2-series MOSFET integrates a fast-recovery body diode with ultra-low Q_rr (250 nC @ 25 °C, 1072 nC @ 150 °C) and tight trr control (80–213 ns), enabling efficient hard-switched and resonant topologies. Its 600 V V_(BR)DSS, 380 mΩ typ. R_DS(on), and 50 V/ns dv/dt ruggedness support robust operation in high-voltage DC-DC stages.

The device uses ST's proprietary deep-trench silicon process to achieve simultaneous low conduction loss and fast switching. Gate drive is optimized by low C_iss (614 pF), C_oss (32 pF), and Crss (3.7 pF), with intrinsic gate resistance of 7 Ω - reducing EMI and simplifying gate driver sizing for 100 kHz–1 MHz designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands 600 V drain-source blocking voltage before avalanche, enabling use in 400 V bus systems with margin.
R_DS(on) max	430 mΩ @ V_GS = 10 V, I_D = 5 A - Limits conduction loss to ≤4.3 W at 10 A continuous, critical for thermal management in compact layouts.
Q_g	14.5 nC - Enables fast, low-loss switching with standard gate drivers; reduces gate drive power and improves efficiency above 200 kHz.
trr	80 ns @ T_j = 25 °C - Minimizes reverse recovery loss and diode-induced voltage spikes in bridge-leg commutation.
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients without spurious turn-on, essential for reliable operation in high-dI/dt inductive loads.
E_AS	250 mJ - Withstands single-pulse unclamped inductive energy events without failure, supporting robust system-level fault tolerance.
R_thJC	1.14 °C/W - Enables 96.5 W dissipation at ΔT = 110 °C (T_J = 150 °C, T_C = 40 °C), supporting high-power density heatsink designs.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended lead configuration; JEDEC MS-012AC compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; Zener-protected to ±25 V for ESD robustness.
2 (TAB/D)	Drain (exposed tab)	Main high-side power terminal; electrically and thermally connected to PCB copper pour for low-inductance, high-current return path.
3 (S)	Source	Reference node for gate drive and current sensing; ties to low-side switch or ground plane; defines V_GS reference.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control modules and on-board chargers, with extended temperature cycling and humidity testing.
Fast-recovery body diode	Q_rr = 250 nC and trr = 80 ns at 25 °C enable zero-voltage switching in phase-shifted full-bridge converters without external diodes.
Extremely low gate charge	Q_g = 14.5 nC and Q_gd/Q_gs ratio of ~1.6 reduce Miller effect, allowing stable 1 MHz+ switching with minimal gate driver stress.
Zener-protected gate	Integrated gate oxide protection clamps transient overvoltage to ±25 V, eliminating need for external gate Zener in noisy automotive environments.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress test per JEDEC JESD22-A109, ensuring guaranteed ruggedness in unclamped inductive switching.

Applications

Automotive On-Board Charger (OBC)

Industrial AC-DC Front-End

Use Scenario: High-frequency PFC and DC-DC isolation stage in 6.6 kW bi-directional OBCs.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in interleaved boost PFC and phase-shifted full-bridge DC-DC converter.

Use Value: Low Q_rr and fast trr minimize body-diode conduction loss during dead-time, improving efficiency by ≥0.8% at full load and enabling 96%+ system efficiency.

Use Scenario: 3.3 kW telecom rectifier with active clamp forward or LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch in primary-side high-voltage rail, operating at 200–500 kHz with synchronous rectification.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during fast voltage transitions across transformer leakage inductance, eliminating shoot-through risk.

Solar Microinverter Half-Bridge

Server PSU LLC Resonant Switch

Use Scenario: DC-AC inversion stage in single-phase 300–500 W microinverters with transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg, commutating 400 V DC link with bidirectional current flow.

Use Value: Zener-protected gate withstands gate-drive coupling noise from floating high-side bootstrap circuits, reducing gate driver complexity and BOM cost.

Use Scenario: Primary-side resonant switch in 1.5 kW server power supply using LLC topology with 48 V output.

IC Role / Device Role / Timing Role: High-efficiency switching element operating in ZVS region, leveraging low C_oss (32 pF) and Q_g for minimal switching loss.

Use Value: C_oss eq. = 57 pF over 0–480 V enables precise resonant tank design and predictable ZVS boundary, improving light-load efficiency by ≥2.3%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60DM2	Same die, TO-220 package; higher R_thJA (62 °C/W vs. 50 °C/W), no exposed drain tab.	Preferred for prototyping or lower-volume through-hole assembly; unsuitable for space-constrained SMT designs requiring thermal pad attachment.	Select when mechanical mounting flexibility outweighs thermal performance needs and board area is not constrained.
IXFH12N60P	600 V, 12 A, 420 mΩ, but no AEC-Q101 qualification; Q_rr = 420 nC (≈1.7× higher); trr = 120 ns.	Acceptable for industrial SMPS but not automotive-grade systems requiring validated reliability and low-recovery loss.	Choose only for non-automotive applications where cost is prioritized over diode recovery performance and qualification compliance.

Compared with STP12N60DM2 and IXFH12N60P, STD12N60DM2AG uniquely combines AEC-Q101 qualification, lowest Q_rr, and DPAK thermal efficiency - making it the sole option for production automotive OBCs demanding both reliability and >95% efficiency at 100 kHz.

Availability

STD12N60DM2AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial AC-DC front-ends, and solar microinverters requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for STD12N60DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STD12N60DM2AG belongs to the MDmesh DM2 family - engineered specifically for high-efficiency, high-frequency switching power converters where low Q_rr, rugged dv/dt behavior, and automotive qualification are mandatory.

FAQ

Is STD12N60DM2AG pin-compatible with other DPAK 600 V MOSFETs?

No - while physical footprint matches standard DPAK (TO-252), pin assignment (G-D-S) is fixed per JEDEC, but electrical characteristics differ significantly. For example, STP12N60DM2 shares same pinout but has different thermal resistance and no exposed drain tab; substitution requires validation of gate drive timing, thermal layout, and avalanche margin.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 6.3 A at T_C = 100 °C (Table 1). This reflects derating due to junction-to-case thermal resistance (1.14 °C/W) and maximum T_J = 150 °C. At T_C = 100 °C, allowable power dissipation is 57.9 W, limiting I_D to 6.3 A for R_DS(on) = 430 mΩ.

Does the fast-recovery body diode eliminate need for external anti-parallel diodes?

Yes - in bridge topologies like phase-shifted full-bridge or half-bridge inverters, the integrated diode's 80 ns trr and 250 nC Q_rr allow reliable ZVS operation without external diodes. However, in high-di/dt (>500 A/µs) or high-temperature (T_J > 125 °C) conditions, external Schottky clamping may still be advised for peak IRRM suppression.

How is avalanche ruggedness verified for STD12N60DM2AG?

Each unit undergoes 100% production-level unclamped inductive switching (UIS) test per JEDEC JESD22-A109, applying I_AR = 2 A pulses at V_DD = 50 V and T_J = 25 °C to deliver E_AS = 250 mJ. Test waveform and energy are monitored in real time; devices failing threshold are rejected.

STD12N60DM2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 614 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD12N60DM2AG FAQ

1.How can I place an order for STD12N60DM2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STD12N60DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD12N60DM2AG reliable?

The price and inventory of STD12N60DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD12N60DM2AG is usually 5 days.

3.What payment methods are accepted for STD12N60DM2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD12N60DM2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD12N60DM2AG?

STD12N60DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD12N60DM2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD12N60DM2AG?

For technical support, including STD12N60DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD12N60DM2AG requirements.

6.How does Aetrix verify that STD12N60DM2AG is sourced from the original manufacturer or authorized distributors?

All STD12N60DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD12N60DM2AG meets industry standards.

7.What is the process for return or replacement of STD12N60DM2AG?

All STD12N60DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STD12N60DM2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD12N60DM2AG part is unused and in its original packaging.

Return procedure for STD12N60DM2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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