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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD12N60DM6

Name: STD12N60DM6
Brand: STMicroelectronics
SKU: STD12N60DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD12N60DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD12N60DM6.pdf

Description:: MOSFET N-CH 600V 10A DPAK

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Product details

Overview

STD12N60DM6 from STMicroelectronics is a high-voltage N-channel MDmesh DM6 Power MOSFET in DPAK (TO-252) package, rated 600 V V_DS, 345 mΩ typ. R_DS(on) at 10 V V_GS, and 10 A continuous drain current at T_C = 25 °C. It features fast-recovery body diode (t_rr = 80 ns, Q_rr = 0.288 µC), 100% avalanche tested, and extreme dv/dt ruggedness (100 V/ns), enabling use in ZVS phase-shift converters and hard-switched bridge topologies.

For engineers reviewing the STD12N60DM6 datasheet, STD12N60DM6 pinout, STD12N60DM6 application, or STD12N60DM6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_g = 17 nC), diode recovery performance, thermal resistance (R_thj-case = 1.39 °C/W), and avalanche energy rating (E_AS = 195 mJ).

Technical Context

This device implements ST's MDmesh DM6 silicon architecture optimized for high-efficiency switching: ultra-low Q_rr and t_rr reduce turn-off losses in inductive loads, while low C_iss (508 pF) and C_oss (28 pF) enable high-frequency operation with minimal capacitive loss. The Zener-protected gate ensures robust ESD immunity up to ±25 V.

Its 100 V/ns MOSFET dv/dt ruggedness and 1000 A/µs diode di/dt capability allow reliable operation under fast transient conditions in resonant and quasi-resonant topologies. The 1.39 °C/W junction-to-case thermal resistance supports high-power density designs when mounted on thermally optimized PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in ZVS converters with margin
R_DS(on) max	390 mΩ at V_GS = 10 V, I_D = 5 A - Enables low conduction loss in 10 A continuous applications
Q_g	17 nC - Reduces gate drive power and enables faster switching with standard drivers
t_rr	80 ns at T_J = 25 °C - Minimizes reverse recovery loss and voltage overshoot in bridge legs
E_AS	195 mJ - Supports unclamped inductive switching without failure in PFC or SMPS primary switches
R_thj-case	1.39 °C/W - Allows 90 W dissipation at T_C = 25 °C; critical for heatsink-limited designs
dv/dt ruggedness	100 V/ns - Ensures noise immunity and latch-up immunity in high-speed half-bridge operation

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for thermal and electrical connection; surface-mount, single-row 3-terminal outline; JEDEC MO-238 compliant; ECOPACK2 RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Exposed metal tab electrically connected to drain; primary thermal path to heatsink or copper pour
G	Gate	Control terminal; requires <10 V threshold (V_GS(th) = 3.25–4.75 V); Zener-protected against overvoltage
S	Source	Reference node for gate drive and current sensing; connects to low-side return or source of complementary switch

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 80 ns and Q_rr = 0.288 µC at 25 °C - reduces cross-conduction loss and EMI in synchronous rectification and LLC
Low R_DS(on) per area	345 mΩ typ. at 10 V - improves efficiency in space-constrained 600 V PFC and auxiliary power supplies
Low gate charge	Q_g = 17 nC, Q_gd = 9.3 nC - lowers driver stress and enables >200 kHz operation with minimal Miller effect
100% avalanche tested	E_AS = 195 mJ - guarantees ruggedness in overvoltage transients during startup, fault, or load dump
Zener-protected gate	V_GS rating ±25 V - eliminates need for external gate clamping in noisy industrial environments

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching element with fast body diode commutation during PWM dead-time.

Use Value: Low Q_rr prevents shoot-through risk and reduces heat generation during 16–20 kHz PWM operation.

Use Scenario: Primary-side switch in active clamp forward or asymmetrical half-bridge PSUs for 48 V telecom systems.

IC Role / Device Role / Timing Role: Main power switch handling 380–400 V DC link with ZVS-assisted turn-on.

Use Value: 100 V/ns dv/dt ruggedness maintains reliability despite rapid bus voltage transitions during soft-switching.

Photovoltaic Inverters

EV On-board Chargers

Use Scenario: DC-DC isolation stage in string inverters converting 600–1000 V PV input to 400 V battery bus.

IC Role / Device Role / Timing Role: High-voltage switch in full-bridge topology operating at 50–100 kHz with phase-shift control.

Use Value: 195 mJ E_AS withstands inductive kickback during grid fault events without derating.

Use Scenario: Primary switch in dual-active-bridge (DAB) topology for 3.3–6.6 kW OBCs.

IC Role / Device Role / Timing Role: Resonant switch managing bidirectional power flow with zero-voltage switching across wide load range.

Use Value: Low C_oss (28 pF) and C_oss,eq (100 pF) minimize circulating current and improve light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7XKSA1	R_DS(on) = 190 mΩ (lower), but V_DS = 650 V; higher Q_g = 32 nC; no fast diode	Better conduction loss, but unsuitable for diode-commutated topologies due to slow body diode (t_rr > 500 ns)	Select only when diode recovery is handled externally or in hard-switched non-commutating roles
STP12N60DM6	Same die, TO-220 package; identical R_DS(on), Q_g, t_rr; R_thj-case = 0.85 °C/W (lower)	Higher thermal performance but larger footprint; not suitable for compact SMT layouts	Choose for prototyping or lower-volume designs where heatsinking dominates over board space

Compared with IPP60R190C7XKSA1, STD12N60DM6 trades higher R_DS(on) for superior diode recovery and lower gate drive demand; versus STP12N60DM6, it sacrifices thermal resistance for surface-mount compatibility and reduced assembly cost in high-volume production.

Availability

STD12N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, photovoltaic inverters, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD12N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD12N60DM6 belongs to the MDmesh DM6 family-engineered specifically for high-efficiency, high-frequency switching in 600 V hard- and soft-switched topologies including PFC, resonant converters, and motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD12N60DM6 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13509. This derating reflects thermal limits under sustained conduction; actual usable current depends on PCB copper area, heatsinking, and ambient airflow.

Does this MOSFET require an external gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent oscillation-ST recommends R_G = 4.7 Ω for resistive load switching (per Figure 13). Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses.

Is the body diode suitable for synchronous rectification?

No-the body diode is optimized for fast recovery in commutation, not continuous conduction. Its V_SD = 1.6 V at 10 A is higher than Schottky or GaN-based synchronous rectifiers; use only for brief freewheeling intervals in bridge topologies.

Can STD12N60DM6 replace STD12N60M2 in existing designs?

Yes, with validation: STD12N60DM6 offers lower R_DS(on) (345 mΩ vs. 420 mΩ), faster t_rr (80 ns vs. 120 ns), and improved dv/dt ruggedness. Gate drive requirements are compatible, but layout must accommodate DPAK thermal pad and verify SOA under peak avalanche conditions.

STD12N60DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 390mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 508 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD12N60DM6 FAQ

1.How can I place an order for STD12N60DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD12N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD12N60DM6 reliable?

The price and inventory of STD12N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD12N60DM6 is usually 5 days.

3.What payment methods are accepted for STD12N60DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD12N60DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD12N60DM6?

STD12N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD12N60DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD12N60DM6?

For technical support, including STD12N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD12N60DM6 requirements.

6.How does Aetrix verify that STD12N60DM6 is sourced from the original manufacturer or authorized distributors?

All STD12N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD12N60DM6 meets industry standards.

7.What is the process for return or replacement of STD12N60DM6?

All STD12N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STD12N60DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD12N60DM6 part is unused and in its original packaging.

Return procedure for STD12N60DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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