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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD12N65M5

Name: STD12N65M5
Brand: STMicroelectronics
SKU: STD12N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD12N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD12N65M5.pdf

Description:: MOSFET N-CH 650V 8.5A DPAK

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Product details

Overview

STD12N65M5 from STMicroelectronics is an N-channel 650 V, 390 mΩ typ. (430 mΩ max), 8.5 A MDmesh M5 Power MOSFET in TO-220FP package, optimized for high-efficiency switching power supplies and PFC stages where low conduction loss and fast switching are critical.

For engineers reviewing the STD12N65M5 datasheet, STD12N65M5 pinout, STD12N65M5 application, or STD12N65M5 equivalent, key selection factors include R_DS(on) at 10 V gate drive, 20 nC total gate charge, 15 V/ns dv/dt capability, avalanche ruggedness (150 mJ E_AS), and thermal resistance of 5.0 °C/W (junction-to-case).

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high breakdown voltage and robust avalanche performance. Its 650 V V_DS rating supports universal-input offline SMPS designs up to 3 kW.

The MOSFET features a built-in body diode with 230 ns reverse recovery time (T_J = 25 °C) and 2.2 µC Q_rr, enabling hard-switched operation in continuous conduction mode (CCM) PFC. Gate threshold voltage is tightly specified at 3–5 V, ensuring reliable turn-on with standard 10 V drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC bus with 1.6× safety margin for surge and ringing in offline converters.
R_DS(on) max	430 mΩ @ V_GS = 10 V, I_D = 4.3 A - Enables <1.8 W conduction loss at 8.5 A, reducing heatsink requirements.
Q_g	20 nC - Low gate charge allows efficient driving with standard gate drivers (e.g., STGAP2S) at 100 kHz+.
E_AS	150 mJ - Fully tested single-pulse avalanche energy ensures reliability under inductive switching stress.
R_thJC	5.00 °C/W - Junction-to-case thermal resistance enables 25 W dissipation at T_C = 100 °C (T_J ≤ 150 °C).
dv/dt	15 V/ns - High immunity to false turn-on during fast voltage transients in bridge-leg configurations.
I_D (cont)	8.5 A @ T_C = 25 °C - Rated current for PCB-mounted heatsink operation without forced air.

Pinout & Package

STD12N65M5 is supplied in TO-220FP package: insulated tab, vertical mounting, 3-pin through-hole configuration with creepage/clearance compliant to 2.5 kV RMS isolation between leads and heat sink.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path	Connected to drain metallization on backside of die; electrically tied to insulated tab - requires no insulator when mounted to grounded heatsink.
G (Gate)	Control terminal	Low-impedance input (R_g = 5 Ω) accepting 0–10 V logic-level signals; sensitive to ESD (±25 V absolute max).
S (Source)	Reference node / return path	Common reference for gate drive and load current; source bond wires define parasitic inductance affecting switching ring.

Key Features

Feature	Design Value
MDmesh M5 superjunction architecture	Delivers 390 mΩ typ. R_DS(on) at 650 V - 25% lower than previous-generation M2 devices, improving full-load efficiency by ~0.5% in 2 kW PFC.
100% avalanche tested	Guarantees minimum 150 mJ single-pulse E_AS - eliminates need for external snubbers in flyback or LLC resonant converters.
Low Q_gd/Q_gs ratio	8.3 nC / 4.8 nC = 1.73 - reduces Miller plateau duration and improves hard-switching robustness in half-bridge topologies.
Enhanced diode softness (Q_rr = 2.2 µC)	Minimizes EMI generation during diode commutation in boost PFC, easing EMI filter design and reducing ferrite core losses.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3 kW active PFC front-end stage operating at 100 kHz with CCM control.

IC Role / Device Role / Timing Role: Main switch in boost converter topology; handles 8.5 A RMS input current at 230 V AC.

Use Value: 390 mΩ R_DS(on) reduces conduction loss by 1.4 W vs. legacy 600 V MOSFETs, lowering thermal stress on heatsink and improving system MTBF.

Use Scenario: Secondary-side synchronous rectification in 48 V/1200 W telecom PSU with ZVS control.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter output stage; conducts 25 A peak with 100 ns dead-time margin.

Use Value: 20 nC Q_g enables clean 150 kHz switching with minimal driver power loss (<150 mW), supporting high-density board layouts.

EV Onboard Chargers (OBC)

UPS Inverter Stages

Use Scenario: Bidirectional AC/DC conversion in 6.6 kW OBC using dual-active-bridge (DAB) topology.

IC Role / Device Role / Timing Role: Primary-side switch handling 650 V DC link with 100 kHz phase-shift modulation.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during high di/dt transitions, eliminating need for negative gate bias in DAB gate drivers.

Use Scenario: 3-phase IGBT/MOSFET inverter stage in 10 kVA line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: High-speed switching element in H-bridge leg; commutates 20 A RMS at 16 kHz PWM frequency.

Use Value: 230 ns t_rr and soft-recovery diode reduce switching loss by 35% compared to standard FRDs, cutting inverter thermal load by 8 W per leg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M5	Same die, TO-220 (non-isolated tab); R_thJC = 1.79 °C/W vs. 5.00 °C/W; higher power dissipation (70 W vs. 25 W).	Requires insulating washer and thermal pad; suited for chassis-mounted heatsinks with direct metal contact.	Select when higher continuous power (70 W) is needed and mechanical isolation is managed externally.
IPP65R190CFD7	Infineon CoolMOS CFD7; 190 mΩ typ. R_DS(on), 650 V, but Q_g = 32 nC and no avalanche rating.	Lacks 100% E_AS test; requires additional clamping for inductive loads; higher gate drive loss.	Prefer only in space-constrained, low-dv/dt applications where avalanche immunity is not required and gate drive capability is ample.

Compared with STP12N65M5, STD12N65M5 trades 45 W power capability for electrical isolation and simplified mounting; versus IPP65R190CFD7, it offers proven avalanche ruggedness and lower Q_g at the cost of 200 mΩ higher R_DS(on), making it preferable for industrial-grade reliability-critical PFC and UPS designs.

Availability

STD12N65M5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD12N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD12N65M5 belongs to the MDmesh M5 family - engineered specifically for high-voltage, high-efficiency switching applications including PFC, SMPS, and motor drives where low R_DS(on) and ruggedness are mandatory.

FAQ

Is STD12N65M5 pin-compatible with STP12N65M5?

Yes - both share identical 3-pin TO-220 footprint and pinout (D-G-S). However, STD12N65M5 uses TO-220FP with insulated tab, while STP12N65M5 uses standard TO-220 with conductive tab. Mechanical mounting and thermal interface differ significantly despite identical pin assignment.

What is the maximum recommended gate resistor for 100 kHz switching?

A 4.7 Ω gate resistor is validated in the datasheet for 100 kHz operation with 5 A load (td(v) = 22.6 ns, tr(v) = 17.6 ns). For higher efficiency, 2.2–3.3 Ω is typical; values below 2 Ω require careful layout to avoid oscillation due to 5 Ω intrinsic R_g.

Does STD12N65M5 require negative gate turn-off voltage?

No - its 15 V/ns dv/dt rating and 3–5 V V_GS(th) ensure immunity to false turn-on under normal operation. Negative gate bias is unnecessary unless operating in extreme high-di/dt environments (>500 A/µs) with poor layout.

Can STD12N65M5 replace STD12N60M2 in existing designs?

Yes, with validation: STD12N65M5 offers higher 650 V V_DS (vs. 600 V), lower 390 mΩ R_DS(on) (vs. 480 mΩ), and improved E_AS. Layout and gate drive remain compatible, but thermal design must account for 5.0 °C/W R_thJC (TO-220FP) versus TO-220FP variants of M2 series.

STD12N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD12N65M5 FAQ

1.How can I place an order for STD12N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD12N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD12N65M5 reliable?

The price and inventory of STD12N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD12N65M5 is usually 5 days.

3.What payment methods are accepted for STD12N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD12N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD12N65M5?

STD12N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD12N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD12N65M5?

For technical support, including STD12N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD12N65M5 requirements.

6.How does Aetrix verify that STD12N65M5 is sourced from the original manufacturer or authorized distributors?

All STD12N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD12N65M5 meets industry standards.

7.What is the process for return or replacement of STD12N65M5?

All STD12N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STD12N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD12N65M5 part is unused and in its original packaging.

Return procedure for STD12N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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