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STMicroelectronics STD12NM50N
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- Part No.:
- STD12NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD12NM50N.pdf
- Description:
- MOSFET N-CH 500V 11A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,685
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Product details
Overview
STD12NM50N from STMicroelectronics is an N-channel 500 V, 0.29 Ω (typ), 11 A MDmesh™ II Power MOSFET in DPAK package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (30 nC), and low input capacitance (940 pF), enabling fast switching in SMPS, PFC stages, and industrial AC-DC power supplies.
For engineers reviewing the STD12NM50N datasheet, STD12NM50N pinout, STD12NM50N application, or STD12NM50N equivalent, key selection criteria include its 500 V VDSS, 0.29 Ω RDS(on) at VGS = 10 V, 30 nC total gate charge, 150 °C max junction temperature, and DPAK thermal resistance of 50 °C/W (junction-to-PCB).
Technical Context
This device implements ST's second-generation MDmesh™ vertical structure with strip layout, delivering industry-leading RDS(on) × Qg figure-of-merit for high-voltage MOSFETs. Its optimized cell design reduces both conduction loss and switching loss simultaneously.
The integrated source-drain diode exhibits 1.3 V forward voltage at 11 A and 340 ns reverse recovery time at Tj = 25 °C, supporting hard-switched and resonant topologies where body diode commutation occurs. The 15 V gate threshold voltage ensures robust noise immunity in noisy power environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Withstands DC bus voltages up to 400 V in 380–400 VAC rectified systems with margin. |
| RDS(on) (max) | 0.38 Ω - Ensures ≤ 4.6 W conduction loss at 11 A continuous drain current. |
| Qg | 30 nC - Enables efficient gate drive with standard 1-A peak drivers at 100–300 kHz switching frequencies. |
| ID (cont, TC=25°C) | 11 A - Supports ≥ 250 W output in TO-252-mounted offline flyback or LLC converters. |
| Rthj-pcb | 50 °C/W - Achieves ≤ 115 °C junction temperature with 2 cm² 2-oz copper pad and no heatsink. |
| EAS | 350 mJ - Sustains single-pulse unclamped inductive energy without failure in PFC or motor drive fault conditions. |
| dv/dt rating | 15 V/ns - Resists false turn-on during high-slew-rate transients in bridge-leg configurations. |
Pinout & Package
DPAK (TO-252) package: surface-mount, 3-pin, single-die configuration with exposed drain pad for thermal and electrical connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current | Connected to system ground; carries full load current and must be routed with low-inductance, wide copper pour. |
| 2 (Gate) | Control input for channel conduction | High-impedance node requiring <100 pF gate loop inductance to suppress ringing during fast switching. |
| 3 (Drain) | Main high-side power terminal | Internally bonded to exposed metal pad; electrically and thermally tied to PCB ground plane via soldered thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg by 35% vs. first-gen MDmesh, directly improving converter efficiency at 100–500 kHz. |
| 100% avalanche rated | Guarantees operation under unclamped inductive switching stress without derating, eliminating need for external snubbers in PFC boost stages. |
| Low Ciss/Coss ratio | 940 pF / 100 pF = 9.4 - Enables zero-voltage switching (ZVS) in resonant converters with minimal dead-time sensitivity. |
| ECOPACK® lead-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements for industrial reflow assembly. |
| 150 °C max junction temperature | Supports operation in enclosed industrial enclosures with ambient temperatures up to 85 °C without forced air cooling. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
Use Scenario: 3 kW front-end PFC stage in 48 V telecom rectifier operating at 100 kHz with interleaved boost topology. IC Role / Device Role / Timing Role: Main switching device in boost power stage; handles 11 A RMS input current with 500 V blocking capability. Use Value: Low 0.29 Ω RDS(on) minimizes conduction loss at high line, while 30 nC Qg enables efficient gate driving with low-power controllers. | Use Scenario: Primary-side switch in 500 W LLC resonant converter for server PSU, operating at 300–500 kHz with ZVS. IC Role / Device Role / Timing Role: High-side half-bridge switch; conducts 8 A peak current with 400 V DC bus voltage. Use Value: 940 pF Ciss and 100 pF Coss support reliable ZVS across load range; 340 ns trr prevents shoot-through during body-diode commutation. |
| Motor Drive Inverters | LED Streetlight Drivers |
Use Scenario: 750 W three-phase inverter for HVAC blower motor, using 6-pack DPAK MOSFETs in IGBT-replacement configuration. IC Role / Device Role / Timing Role: Phase-leg switching element; blocks 450 V DC link and switches 10 A peak motor current. Use Value: 100% avalanche rating eliminates need for external clamping in regenerative braking events; 15 V VGS(th) prevents spurious turn-on from gate noise. | Use Scenario: Buck-boost LED driver for 150 W streetlight, operating from 100–277 VAC input with constant-current regulation. IC Role / Device Role / Timing Role: Main switching transistor in isolated flyback controller; withstands 500 V reflected voltage spikes. Use Value: 500 V VDSS provides 20% margin over worst-case reflected voltage; DPAK footprint allows compact, cost-effective PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM50N | Same die, TO-220 package; Rthj-case = 1.25 °C/W vs. DPAK's 50 °C/W (junction-to-PCB) | Requires bolted heatsink; unsuitable for space-constrained SMT designs | Select when thermal budget permits discrete heatsinking and through-hole assembly is preferred. |
| IPP60R190C6 | 600 V, 0.19 Ω, 19 A, CoolMOS™ C6; lower RDS(on) but higher Qg (43 nC) | Better conduction loss at high current; slower switching due to higher gate charge | Prefer for <100 kHz applications prioritizing efficiency over switching speed; verify gate driver capability for 43 nC. |
Compared with STP12NM50N, STD12NM50N offers superior PCB-level thermal performance and automated assembly compatibility; versus IPP60R190C6, it trades higher RDS(on) for lower Qg and proven ruggedness in avalanche-limited topologies.
Availability
STD12NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and LED streetlight drivers requiring stable component supply and long-term manufacturing continuity.
Supply support for STD12NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.
STD12NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power conversion in industrial and telecom infrastructure equipment.
FAQ
What is the maximum continuous drain current for STD12NM50N at 100 °C case temperature?
The maximum continuous drain current is 6.7 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package and ensures safe operation within the 150 °C maximum junction temperature under real-world PCB thermal conditions.
Does STD12NM50N require a gate resistor for reliable operation?
Yes - a gate resistor (typically 10–47 Ω) is required to dampen gate-source ringing caused by parasitic inductance and prevent unintended oscillation. The 4.5 Ω gate input resistance and 30 nC Qg make it sensitive to PCB layout; improper gate drive can cause overshoot exceeding ±25 V absolute maximum rating.
Can STD12NM50N replace STP12NM50N in an existing TO-220 design?
No - STD12NM50N uses DPAK (TO-252) packaging, which has different footprint, thermal path, and mounting method. Direct replacement requires PCB redesign to accommodate the surface-mount DPAK pad layout and revise thermal management strategy from heatsink-based to PCB-copper-based cooling.
Is STD12NM50N suitable for use in automotive applications?
No - STD12NM50N is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension, or failure-in-time (FIT) data. ST explicitly states non-automotive-grade parts carry no warranty for automotive use, and this device is intended for industrial and telecom power systems only.
STD12NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 940 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD12NM50N FAQ
1.How can I place an order for STD12NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STD12NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD12NM50N reliable?
The price and inventory of STD12NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD12NM50N is usually 5 days.
3.What payment methods are accepted for STD12NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD12NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD12NM50N?
STD12NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD12NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD12NM50N?
For technical support, including STD12NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD12NM50N requirements.
6.How does Aetrix verify that STD12NM50N is sourced from the original manufacturer or authorized distributors?
All STD12NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD12NM50N meets industry standards.
7.What is the process for return or replacement of STD12NM50N?
All STD12NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STD12NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD12NM50N part is unused and in its original packaging.
Return procedure for STD12NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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