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STMicroelectronics STD134N4F7AG

Part No.:
STD134N4F7AG
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD134N4F7AG.pdf
Description:
MOSFET N-CHANNEL 40V 80A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,959

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Product details

Overview

STD134N4F7AG from STMicroelectronics is an automotive-grade N-channel 40 V, 2.5 mΩ typ. RDS(on), 80 A continuous drain current Power MOSFET in DPAK (TO-252) package, utilizing STripFET™ F7 trench technology for low conduction loss and fast switching in high-current DC-DC converters, motor drivers, and battery protection circuits.

For engineers reviewing the STD134N4F7AG datasheet, STD134N4F7AG pinout, STD134N4F7AG application, or STD134N4F7AG equivalent, key selection criteria include its AEC-Q101 qualification, 1.12 °C/W junction-to-case thermal resistance, 325 mJ single-pulse avalanche energy, and low Crss/Ciss ratio for EMI robustness in automotive power stages.

Technical Context

This device implements an enhanced trench-gate STripFET™ F7 structure that reduces both RDS(on) and gate charge (Qg = 41 nC typ.) while maintaining high avalanche ruggedness (EAS = 325 mJ). Its low Crss/Ciss ratio (≈2.1%) minimizes Miller-induced turn-on risk during high-dV/dt switching.

The DPAK package enables high-power dissipation (PTOT = 134 W at Tcase = 25 °C) with direct thermal path via exposed drain tab, and supports pulsed drain currents up to 320 A (IDM) under SOA-limited conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V/24 V automotive systems and 48 V mild-hybrid architectures.
RDS(on) max3.5 mΩ - Ensures ≤2.8 W conduction loss at 80 A, critical for thermally constrained PCB layouts.
ID cont.80 A - Continuous current rating limited by package thermal capability, not silicon die.
EAS325 mJ - Enables reliable operation under unclamped inductive switching without external snubbers.
Crss/Ciss60/2790 pF - Low reverse transfer capacitance improves noise immunity and reduces gate drive power.
Rthj-case1.12 °C/W - Allows direct heatsinking to chassis or copper pour, supporting >100 W sustained power delivery.
Qg41 nC - Enables efficient 100 kHz–500 kHz switching with standard gate drivers (e.g., STGAP2S).

Pinout & Package

DPAK (TO-252) package with exposed drain tab on underside for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-252-2 variant (type A2), lead-free and RoHS-compliant per ECOPACK® standards.

Pin/TerminalCircuit RoleDesign Meaning
D (Drain / Tab)Main power output terminal and thermal interfaceExposed metal tab electrically connected to drain; must be soldered to large copper area for thermal management and current return path.
G (Gate)Control inputHigh-impedance MOSFET gate requiring <100 nA leakage; driven by logic-level or dedicated gate driver with 10 V nominal bias.
S (Source)Power reference and current returnCommon node for load current return and gate drive reference; connects to ground plane or low-inductance source trace.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, body electronics, and ADAS power stages.
Low RDS(on) × Qg FoM102.5 mΩ·nC - Optimized trade-off between conduction and switching losses for high-efficiency SMPS.
High avalanche energy rating325 mJ - Eliminates need for external clamping diodes in relay driving and solenoid control.
Low Crss/Ciss ratio2.1% - Reduces susceptibility to false turn-on during high-speed, high-voltage transitions in half-bridge topologies.
Enhanced trench gate structureReduces gate charge by ~25% vs. prior STripFET™ F6 generation, enabling faster switching with lower driver stress.

Applications

Automotive Body Control Module (BCM)48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-side load switching for headlights, HVAC fans, and seat motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver with bootstrap supply; operates in hard-switched mode at ≤20 kHz.

Use Value: 2.5 mΩ RDS(on) limits resistive heating to <2.5 W at 80 A, enabling compact heatsinkless design in space-constrained BCM enclosures.

Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converter for regenerative braking energy recovery.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200–300 kHz with zero-voltage switching (ZVS) assist.

Use Value: 41 nC Qg and 17.5 ns rise time enable efficient ZVS transition, reducing switching losses by ≥35% vs. Si diode solution.

Industrial Motor StarterLithium Battery Protection Circuit

Use Scenario: Solid-state contactor replacement for 3-phase AC induction motor soft-start modules rated up to 5 kW.

IC Role / Device Role / Timing Role: Parallel-configured power switch in IGBT gate-drive-assisted topology; handles 320 A pulsed current during startup surge.

Use Value: 320 A IDM and 325 mJ EAS withstand repeated inrush events without degradation, extending system lifetime beyond mechanical relay alternatives.

Use Scenario: Overcurrent and short-circuit protection in 4S–12S Li-ion battery packs for e-bikes and energy storage systems.

IC Role / Device Role / Timing Role: Primary discharge FET in active protection IC-controlled stack; conducts 80 A continuously and interrupts fault current within 10 µs.

Use Value: 1.2 V VSD forward drop of integrated body diode enables fast reverse-current blocking during cell balancing, minimizing heat generation during charge/discharge cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF134N4F7ASame RDS(on) (2.5 mΩ typ.), but higher Qg (48 nC) and no AEC-Q101 certification.Not qualified for automotive use; suitable only for industrial/commercial power supplies.Select only if AEC-Q101 compliance is unnecessary and gate drive margin is sufficient.
STL134N4F7AGIdentical die and specs, but in PowerFLAT™ 5x6 package with lower Rthj-pcb (35 °C/W vs. 50 °C/W) and no exposed drain tab.Better PCB thermal performance but requires different layout and lacks chassis-mount thermal path.Prefer for space-constrained designs where board-level cooling dominates over chassis heatsinking.

Compared with IRF134N4F7A and STL134N4F7AG, STD134N4F7AG uniquely combines AEC-Q101 qualification, DPAK's robust thermal interface, and lowest Crss/Ciss ratio-making it optimal for automotive high-reliability, high-current switching where EMI immunity and thermal coupling are critical.

Availability

STD134N4F7AG is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild-hybrid DC-DC converters, and industrial motor starters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STD134N4F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD134N4F7AG belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive power distribution and next-generation 48 V systems.

FAQ

Is STD134N4F7AG suitable for high-frequency switching above 500 kHz?

No. While its 17.5 ns rise time supports operation up to ~300 kHz in hard-switched topologies, gate charge (41 nC) and output capacitance (890 pF) cause excessive switching losses above 500 kHz. For such frequencies, consider GaN or optimized low-Qg Si MOSFETs like ST's MDmesh™ DM6 series.

What is the maximum PCB copper area required for thermal performance at 80 A continuous?

Per datasheet Figure 20, a minimum 1-inch² (645 mm²) 2 oz copper pad connected to the drain tab is required to achieve the specified Rthj-pcb of 50 °C/W. For full 134 W dissipation, additional thermal vias (≥12×0.3 mm) to inner ground planes and optional heatsink mounting are recommended.

Does STD134N4F7AG include integrated ESD protection on the gate?

No. The device has no built-in gate ESD protection diodes. External 10–22 Ω gate series resistor and TVS clamp (e.g., PESD5V0S1BA) between gate and source are mandatory to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV, as specified in AEC-Q101 test conditions.

Can STD134N4F7AG replace older STripFET™ F4 or F5 MOSFETs in existing designs?

Yes, with validation. It offers lower RDS(on) and Qg than F4/F5 equivalents (e.g., STD120N4F7AG), but gate threshold voltage (2–4 V) and SOA curves differ. Layout changes may be needed to accommodate improved thermal performance and reduced gate drive requirements.

STD134N4F7AG Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2790 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
134W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD134N4F7AG FAQ

1.How can I place an order for STD134N4F7AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STD134N4F7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD134N4F7AG reliable?

The price and inventory of STD134N4F7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD134N4F7AG is usually 5 days.

3.What payment methods are accepted for STD134N4F7AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD134N4F7AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD134N4F7AG?

STD134N4F7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD134N4F7AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD134N4F7AG?

For technical support, including STD134N4F7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD134N4F7AG requirements.

6.How does Aetrix verify that STD134N4F7AG is sourced from the original manufacturer or authorized distributors?

All STD134N4F7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD134N4F7AG meets industry standards.

7.What is the process for return or replacement of STD134N4F7AG?

All STD134N4F7AG units undergo pre-shipment inspection (PSI). If there is an issue with STD134N4F7AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD134N4F7AG part is unused and in its original packaging.

Return procedure for STD134N4F7AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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