STMicroelectronics STD13N60DM2

Overview

STD13N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 600 V V_DS, 0.365 Ω max R_DS(on) at 10 V V_GS, and 11 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with 90 ns trr (T_j = 25 °C) and 252 nC Q_rr, enabling high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STD13N60DM2 datasheet, STD13N60DM2 pinout, STD13N60DM2 application, or STD13N60DM2 equivalent, key selection criteria include its 40 V/ns diode dv/dt ruggedness, 19 nC total gate charge, 730 pF input capacitance, and DPAK (TO-252) thermal resistance of 1.14 °C/W junction-to-case - critical for high-frequency SMPS and industrial motor drives.

Technical Context

This MOSFET employs ST's MDmesh DM2 superjunction architecture to achieve low R_DS(on) × Q_g figure-of-merit (0.365 Ω × 19 nC), optimized for hard-switched and resonant converters. Its Zener-protected gate withstands ±25 V V_GS, and the body diode is 100% avalanche tested to 340 mJ E_AS.

The device delivers stable switching performance across –55 to 150 °C operating range, with normalized R_DS(on) variation ≤2.2× from –75 to 125 °C and V_(BR)DSS drift <±8% over temperature. Its C_oss eq. of 70 pF (0–480 V) supports low output capacitance energy (E_OSS = 5 µJ at 600 V).

Key Specifications

Pinout & Package

STD13N60DM2 is housed in a surface-mount DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package complies with ECOPACK environmental standards and is supplied in tape-and-reel format (2500 pcs/reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP12N60DM2 and IPP60R190C7, STD13N60DM2 uniquely balances 600 V rating, DPAK form factor, 11 A current, fast diode (90 ns trr), and low Q_g (19 nC) - making it optimal for space-constrained, high-frequency industrial SMPS where diode recovery and thermal density are critical.

Availability

STD13N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server/telecom SMPS, industrial PFC boost stages, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STD13N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

STD13N60DM2 belongs to the MDmesh DM2 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and industrial motor control where low R_DS(on), fast diode recovery, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD13N60DM2 supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 1 (Absolute Maximum Ratings). This derating reflects thermal limitations of the DPAK package and must be applied in thermal design calculations alongside R_thJC = 1.14 °C/W to ensure T_j ≤ 150 °C under steady-state conditions.

Does the body diode require external anti-parallel diode placement?

No - the STD13N60DM2 integrates a fast-recovery body diode with trr = 90 ns (25 °C) and Q_rr = 252 nC, fully characterized and 100% tested. It is designed for direct use in freewheeling, synchronous rectification, and bridge-leg commutation without supplemental diodes in most high-frequency topologies.

What is the safe operating area (SOA) limitation at 10 µs pulse width?

At t_p = 10 µs, the SOA curve (Figure 1) limits operation to ≤25 A at V_DS = 100 V and ≤10 A at V_DS = 400 V, constrained by R_DS(on) and peak power. This defines maximum pulsed current capability in short-circuit or overload events without thermal runaway or second breakdown.

Is the DPAK package offered in both type A2 and type C3 variants for this part?

Yes - per DS11596 Rev 4 Section 4.1 and 4.2, STD13N60DM2 is qualified in both DPAK (TO-252) type A2 and type C3 mechanical variants. Type A2 features a 0.90–1.10 mm A1 height and 5.10–5.25 mm D1 width; type C3 has A1 = 0.00–0.10 mm and D1 = 5.20–5.70 mm, enabling compatibility with different PCB assembly processes.