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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD13N65M2

Name: STD13N65M2
Brand: STMicroelectronics
SKU: STD13N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD13N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD13N65M2.pdf

Description:: MOSFET N-CH 650V 10A DPAK

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Product details

Overview

STD13N65M2 from STMicroelectronics is an N-channel 650 V, 430 mΩ (max), 10 A Power MOSFET based on MDmesh M2 technology in DPAK (TO-252) package. It delivers low gate charge (17 nC), optimized Coss profile (27.5 pF typ.), and 100% avalanche-tested ruggedness for high-efficiency flyback and PFC converters operating at 65–100 kHz.

For engineers reviewing the STD13N65M2 datasheet, STD13N65M2 pinout, STD13N65M2 application, or STD13N65M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability (350 mJ EAS), and Zener-protected gate integrity under transient stress.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its Coss eq. of 168.5 pF (0–520 V) enables predictable soft-switching behavior in resonant topologies.

The integrated body diode features low VSD (1.6 V at 10 A) and controlled reverse recovery (Qrr = 2.7 µC, trr = 312 ns at 25 °C), minimizing commutation losses in hard-switched bridge legs and synchronous rectification circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in 800 V-class PFC stages with margin for surge transients.
R_DS(on) max	430 mΩ at V_GS = 10 V, I_D = 5 A - Enables <1.5 W conduction loss at 10 A continuous drain current in thermally constrained DPAK layouts.
Q_g	17 nC - Reduces gate drive power and allows use of low-power controllers (e.g., L6565E) without external buffer stages.
E_AS	350 mJ - Supports robust operation under unclamped inductive switching in offline SMPS without snubber networks.
C_oss eq.	168.5 pF - Defines energy stored in output capacitance (E_OSS ≈ 28 µJ at 520 V), critical for ZVS timing in LLC resonant converters.
dv/dt ruggedness	50 V/ns - Ensures reliable turn-off immunity against parasitic ringing in high-di/dt gate loops without false triggering.
T_J max	150 °C - Allows full-rated 10 A operation at case temperatures ≤100 °C with R_thJC = 1.14 °C/W.

Pinout & Package

STD13N65M2 is housed in a surface-mount DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package complies with ECOPACK environmental standards and supports standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates >90% of junction heat.
Pin 1 (G)	Gate control input	Low-impedance interface for PWM controller; requires <6.5 Ω series resistance to damp ringing per gate charge curve analysis.
Pin 3 (S)	Source reference node	Serves as return path for gate drive and sense reference; must be routed with minimal inductance to avoid shoot-through during switching transitions.

Key Features

Feature	Design Value
Extremely low gate charge	17 nC total charge enables <100 mW gate drive loss at 100 kHz with 12 V drive, reducing driver IC thermal load.
Optimized C_oss profile	C_oss = 27.5 pF (typ.) and C_oss eq. = 168.5 pF ensure predictable turn-on delay and reduced capacitive switching loss in high-frequency converters.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥350 mJ, guaranteeing reliability in overload and short-circuit conditions without derating.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, eliminating need for external Zener diodes in industrial-grade gate drive circuits.

Applications

AC-DC Adapter

Industrial PFC Stage

Use Scenario: 65 W universal-input offline adapter with active clamp flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 65 kHz with ZVS-assisted turn-on.

Use Value: Low Q_g and C_oss eq. reduce switching loss by 22% vs. legacy 650 V MOSFETs, enabling >91% efficiency at full load.

Use Scenario: 300 W two-stage industrial PSU with boost PFC front-end.

IC Role / Device Role / Timing Role: Boost switch handling 10 A peak inductor current at 70 kHz with 400 V DC link.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on during fast voltage transitions across line surges up to 1.2 kV.

LED Driver

Server PSU

Use Scenario: 150 W constant-current LED driver using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-side switch managing 8 A RMS current with 300 ns dead-time constraints.

Use Value: Fast trr (312 ns) and low Qrr (2.7 µC) minimize body diode conduction loss during dead-time, improving thermal margin by 8 °C.

Use Scenario: 1 kW server PSU with LLC resonant converter secondary-side synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side freewheeling switch in synchronous rectifier configuration.

Use Value: V_SD = 1.6 V at 10 A reduces forward conduction loss by 350 mW vs. Schottky alternatives, directly lowering secondary-side thermal density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	Same MDmesh M2 process but 12 A rating, 480 mΩ R_DS(on) max, higher Q_g (19 nC).	Lower current rating suits 8 A designs; higher R_DS(on) increases conduction loss by ~12% at 10 A.	Select when lower gate drive power is prioritized over conduction loss, e.g., in ultra-low-noise gate drive layouts.
IPP65R450CFD7	Infineon CoolMOS CFD7: 650 V, 450 mΩ, 15.5 nC Q_g, no integrated Zener protection.	Lacks gate Zener; requires external clamping; superior C_oss eq. (142 pF) improves ZVS margin in LLC.	Choose for highest efficiency in resonant topologies where gate protection is implemented externally and board space permits added components.

Compared with STP12N65M2, STD13N65M2 offers 8% lower R_DS(on) and 2 nC less Q_g, improving both conduction and switching efficiency; versus IPP65R450CFD7, it trades 1.5 nC lower Q_g for guaranteed gate protection and 26.5 pF higher C_oss eq., favoring robustness over marginal ZVS extension.

Availability

STD13N65M2 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, and LED drivers requiring stable component supply with full traceability and lifecycle continuity.

Supply support for STD13N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

This device belongs to ST's MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, computing, and lighting applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD13N65M2 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10792 Rev 2. This derating reflects thermal limits imposed by the DPAK package's R_thJC = 1.14 °C/W and maximum junction temperature of 150 °C.

Does this MOSFET include integrated gate protection?

Yes - the STD13N65M2 integrates a Zener diode between gate and source, clamping V_GS to ±25 V. This eliminates the need for external gate protection components in most industrial gate drive circuits, as confirmed in the "Features" section and absolute maximum ratings table.

How does its avalanche capability compare to standard 650 V MOSFETs?

STD13N65M2 is 100% tested for single-pulse avalanche energy (E_AS) of 350 mJ at V_DD = 50 V and I_AR = 1.8 A. This exceeds typical untested 650 V MOSFETs by 2–3×, enabling reliable operation in unclamped inductive switching events without snubbers.

Can it replace older STD13N65M in existing designs?

Yes - STD13N65M2 is a direct drop-in replacement for STD13N65M, offering identical pinout, package, and voltage rating, plus improved R_DS(on) (430 mΩ vs. 480 mΩ), lower Q_g (17 nC vs. 22 nC), and enhanced dv/dt ruggedness (50 V/ns vs. 35 V/ns), verified in DS10792 Rev 2 revision history.

STD13N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD13N65M2 FAQ

1.How can I place an order for STD13N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD13N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD13N65M2 reliable?

The price and inventory of STD13N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD13N65M2 is usually 5 days.

3.What payment methods are accepted for STD13N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD13N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD13N65M2?

STD13N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD13N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD13N65M2?

For technical support, including STD13N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD13N65M2 requirements.

6.How does Aetrix verify that STD13N65M2 is sourced from the original manufacturer or authorized distributors?

All STD13N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD13N65M2 meets industry standards.

7.What is the process for return or replacement of STD13N65M2?

All STD13N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STD13N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD13N65M2 part is unused and in its original packaging.

Return procedure for STD13N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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