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STMicroelectronics STD13NM60ND
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- Part No.:
- STD13NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD13NM60ND.pdf
- Description:
- MOSFET N-CH 600V 11A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,424
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Product details
Overview
STD13NM60ND from STMicroelectronics is a 600 V, 13 A N-channel superjunction power MOSFET in TO-220FP package, featuring 0.32 Ω RDS(on) max at VGS = 10 V, 100% avalanche-rated capability, and optimized for hard-switched PFC and SMPS primary-side switching in industrial AC-DC power supplies.
For engineers reviewing the STD13NM60ND datasheet, STD13NM60ND pinout, STD13NM60ND application, or STD13NM60ND equivalent, key selection criteria include its 600 V blocking voltage, low gate charge (Qg = 34 nC), fast turn-on/turn-off times (ton = 25 ns, toff = 85 ns), and ruggedness under repetitive avalanche conditions.
Technical Context
This MOSFET employs ST's proprietary SuperMESH™ technology to achieve high voltage rating with low conduction loss and controlled EMI behavior. Its gate threshold voltage (VGS(th)) ranges from 3.0 V to 4.5 V, enabling reliable drive with standard 12 V controllers.
The device features an integrated fast-recovery body diode with reverse recovery time (trr) of 120 ns and Qrr = 190 nC, supporting ZVS-capable topologies and reducing snubber losses in resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Sustains full mains-line transients in universal-input 85–265 VAC systems without derating. |
| RDS(on) max | 0.32 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 13 A DC, suitable for 200–300 W PFC stages. |
| Qg | 34 nC - Reduces gate-drive power and allows use with low-current PWM controllers like UC3854 or L6562. |
| Eoss | 37 nJ @ VDS = 400 V - Low output capacitance energy minimizes switching loss in 65–100 kHz hard-switched converters. |
| trr | 120 ns - Supports discontinuous conduction mode (DCM) boost PFC with predictable diode commutation. |
| Tj max | 150 °C - Allows operation in sealed enclosures with limited airflow when mounted on ≥25 cm² copper area. |
Pinout & Package
STD13NM60ND uses the TO-220FP (Full-Pak) package: insulated plastic case with drain-connected tab, 3-pin vertical mounting, and creepage distance >4 mm between drain and source pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-voltage power output node | Electrically connected to metal tab; must be isolated from heatsink unless referenced to system ground. |
| Gate | Control input | Receives PWM signal; requires 10–15 V drive for full enhancement; sensitive to ESD (HBM 2 kV). |
| Source | Power return / reference node | Serves as local ground for gate driver; carries full load current; layout must minimize inductance to prevent ringing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Avalanche Tested | Guarantees single-pulse avalanche energy rating (EAS) of 220 mJ, enabling robust overvoltage fault tolerance. |
| Low Gate Charge (Qg) | 34 nC reduces driver IC stress and enables higher-frequency operation without excessive gate-drive loss. |
| Fast Body Diode Recovery | 120 ns trr and low Qrr suppress voltage spikes during diode commutation in boost and flyback topologies. |
| Enhanced dv/dt Immunity | Rated for 4.5 V/ns at VDD = 400 V, minimizing false turn-on in high-noise industrial environments. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in continuous conduction mode (CCM) boost PFC stage for 3 kW telecom rectifier. IC Role / Device Role / Timing Role: High-voltage switching element synchronized to 65 kHz PWM controller; handles 13 A RMS input current. Use Value: 0.32 Ω RDS(on) limits conduction loss to ≤2.2 W, enabling >96% PFC efficiency at full load without forced air cooling. |
Use Scenario: Main switch in LLC resonant half-bridge secondary-side synchronous rectification. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by gate driver referenced to source; operates at 300 kHz. Use Value: Fast body diode (120 ns trr) ensures clean zero-current switching transition, reducing dead-time losses by 18% vs. discrete diode solution. |
| Motor Drive Inverters | UPS & Battery Backup Systems |
|
Use Scenario: Upper-leg IGBT replacement in 3-phase inverter for HVAC compressor drives (≤2.2 kW). IC Role / Device Role / Timing Role: High-side switching device in 650 V DC bus topology; switched at 8 kHz with active Miller clamp. Use Value: 600 V VDS rating provides 20% margin over 540 V DC bus, eliminating need for external clamping circuits. |
Use Scenario: Bidirectional DC-DC converter switch in hybrid UPS with Li-ion battery interface. IC Role / Device Role / Timing Role: Unidirectional power flow control element in buck-boost stage operating at 100 kHz. Use Value: 100% avalanche rating supports safe interruption of 15 A short-circuit current during battery fault events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM60N | 12 A rating, 0.38 Ω RDS(on), same 600 V rating and TO-220FP package. | Lower current handling limits peak power to ~250 W; less margin in 300 W+ PFC designs. | Select when thermal budget permits higher RDS(on) and cost sensitivity outweighs 1 A current margin. |
| FDPF13N60NZ | 13 A, 0.34 Ω RDS(on), similar Qg (36 nC), but TO-220F (non-insulated tab) package. | Requires insulating washer for heatsink mounting; lacks ST's avalanche test certification. | Choose only if mechanical design accommodates non-insulated tab and system-level avalanche testing is performed externally. |
Compared with STP12NM60N and FDPF13N60NZ, STD13NM60ND delivers superior thermal margin at full rated current and guaranteed avalanche ruggedness-critical for unattended industrial power systems where field reliability is non-negotiable.
Availability
STD13NM60ND is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and UPS systems requiring stable component supply and long-term manufacturing continuity.
Supply support for STD13NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.
STD13NM60ND belongs to ST's SuperMESH™ power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in mission-critical industrial and infrastructure equipment.
FAQ
What is the maximum recommended gate resistor value for STD13NM60ND in a 65 kHz PFC application?
A 10 Ω gate resistor is recommended for balanced switching speed and EMI control. Lower values (<5 Ω) increase dv/dt stress and risk parasitic turn-on; higher values (>22 Ω) extend ton/toff beyond 40 ns, raising total switching loss above 1.1 W at 65 kHz. Layout-dependent PCB trace inductance must also be kept below 10 nH.
Does STD13NM60ND require a negative gate turn-off voltage to ensure reliable commutation?
No. STD13NM60ND has a VGS(th) range of 3.0–4.5 V and exhibits no significant Miller plateau instability. A 0 V turn-off is sufficient when using a low-impedance gate driver path. Negative bias is unnecessary unless operating in ultra-high dv/dt environments (>10 V/ns) with poor layout.
Can STD13NM60ND replace STW20NK60Z in an existing 600 W SMPS design?
Yes-both are 600 V, TO-247 packaged MOSFETs-but STD13NM60ND uses TO-220FP and has lower RDS(on) (0.32 Ω vs. 0.36 Ω) and Qg (34 nC vs. 42 nC). Thermal redesign is required due to smaller package footprint and reduced heatsinking area; PCB copper pour must be increased by ≥40% to maintain Tj ≤130 °C.
Is the body diode of STD13NM60ND suitable for synchronous rectification in LLC resonant converters?
Yes-the body diode is characterized with trr = 120 ns and Qrr = 190 nC, making it viable for low-frequency (<200 kHz) synchronous rectification where external Schottky diodes would incur higher forward drop. However, dedicated SR controllers remain preferred for precise timing control above 150 kHz.
STD13NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24.5 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 845 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 109W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD13NM60ND FAQ
1.How can I place an order for STD13NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STD13NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD13NM60ND reliable?
The price and inventory of STD13NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD13NM60ND is usually 5 days.
3.What payment methods are accepted for STD13NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD13NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD13NM60ND?
STD13NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD13NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD13NM60ND?
For technical support, including STD13NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD13NM60ND requirements.
6.How does Aetrix verify that STD13NM60ND is sourced from the original manufacturer or authorized distributors?
All STD13NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD13NM60ND meets industry standards.
7.What is the process for return or replacement of STD13NM60ND?
All STD13NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STD13NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD13NM60ND part is unused and in its original packaging.
Return procedure for STD13NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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