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STMicroelectronics STD14NM50N
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- Part No.:
- STD14NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD14NM50N.pdf
- Description:
- MOSFET N-CH 500V 12A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,645
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Product details
Overview
STD14NM50N from STMicroelectronics is an N-channel 500 V, 12 A Power MOSFET in D²PAK (TO-263) package, featuring 0.28 Ω typ. RDS(on), 27 nC total gate charge, and 15 V/ns dv/dt rating. It employs MDmesh™ II vertical strip technology for high-efficiency switching in offline SMPS, PFC stages, and industrial DC-DC converters.
For engineers reviewing the STD14NM50N datasheet, STD14NM50N pinout, STD14NM50N application, or STD14NM50N equivalent, key selection criteria include its 500 V VDS, 1.39 °C/W Rthj-case, 172 mJ EAS, and 100% avalanche-tested ruggedness-critical for reliable operation in high-voltage flyback and resonant topologies.
Technical Context
This MOSFET uses ST's second-generation MDmesh™ II process, combining a vertical drift region with optimized strip layout to minimize both conduction loss (RDS(on)) and switching loss (Qg, Ciss). Its 816 pF Ciss and 3 pF Crss support fast, low-noise switching at high dV/dt rates up to 15 V/ns.
The device integrates a robust body diode with 252 ns trr and 2.8 μC Qrr at 25 °C, enabling efficient hard-switched operation in continuous conduction mode (CCM) PFC. Thermal resistance junction-to-case is fixed at 1.39 °C/W, requiring direct heatsink mounting via the exposed drain tab.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands full mains-referenced DC bus in universal-input 85–265 VAC SMPS |
| RDS(on) max | 0.32 Ω @ VGS = 10 V, ID = 6 A - Limits conduction loss to ≤ 4.6 W at 12 A continuous (TC = 25 °C) |
| Qg | 27 nC - Enables <100 ns total switching time with 4.7 Ω gate resistor, reducing switching loss in 65–100 kHz designs |
| EAS | 172 mJ - Guarantees single-pulse unclamped inductive switching survival without external snubber |
| Rthj-case | 1.39 °C/W - Requires mechanical thermal interface to heatsink; enables 90 W dissipation at ΔT = 125 °C |
| dv/dt rating | 15 V/ns - Supports stable operation in high-dV/dt environments like LLC resonant converters with fast ZVS transitions |
Pinout & Package
D²PAK (TO-263) package with exposed drain tab on underside for thermal and electrical connection; 3-pin surface-mount outline per Figure 19 of DocID024666 Rev 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level drive; 4.5 Ω intrinsic gate resistance limits ringing and simplifies gate driver sizing |
| 2 (Drain) | High-side power switch node | Connected to exposed metal tab; must be soldered to PCB copper pour or heatsink for thermal and current return path |
| 3 (Source) | Power return reference | Provides low-inductance source path; ties to local ground plane to minimize switching loop area and EMI |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness against voltage transients in unregulated or fault-prone topologies without derating |
| Low Ciss / Coss ratio (816 pF / 60 pF) | Enables high efficiency in ZVS circuits by minimizing capacitive turn-on loss and improving soft-switching margin |
| MDmesh™ II vertical structure | Achieves 0.28 Ω RDS(on) at 500 V - 30% lower on-resistance than first-gen MDmesh devices at same voltage class |
| Low gate input resistance (4.5 Ω) | Reduces gate oscillation risk and allows use of smaller gate resistors without compromising EMI or shoot-through immunity |
Applications
| Server PSU Primary Switch | Industrial AC-DC Adapter |
|---|---|
Use Scenario: High-density 1 kW server power supply operating in discontinuous conduction mode (DCM) flyback with 230 VAC input. IC Role / Device Role / Timing Role: Main high-side switching element handling 500 V DC bus and 12 A peak primary current. Use Value: 0.28 Ω RDS(on) reduces conduction loss by 1.8 W vs. comparable 0.4 Ω MOSFETs; 172 mJ EAS eliminates need for clamping circuitry. |
Use Scenario: 300 W industrial AC-DC adapter with active PFC front-end and LLC resonant secondary stage. IC Role / Device Role / Timing Role: PFC boost switch operating at 65 kHz with 400 V DC link and 12 A RMS current. Use Value: 27 nC Qg enables efficient gate driving with low-power controller; 15 V/ns dv/dt rating ensures noise immunity during zero-crossing transitions. |
| Telecom Rectifier Module | EV Charger Auxiliary Supply |
Use Scenario: 48 V telecom rectifier using dual-active-bridge topology with 500 V isolation barrier. IC Role / Device Role / Timing Role: Isolated side high-voltage switch managing 500 V bus and 10 A load current under transient overload. Use Value: 100% avalanche testing validates reliability during line surges; 1.39 °C/W Rthj-case supports forced-air-cooled thermal design at 85 °C ambient. |
Use Scenario: 12 V/5 A auxiliary power supply in 22 kW on-board EV charger, powered from 800 V battery rail. IC Role / Device Role / Timing Role: Primary switch in flyback converter stepping down 800 V to 12 V with wide input variation. Use Value: 500 V VDS provides 60% voltage margin over 800 V rail (derated for transients); 252 ns trr minimizes diode recovery loss in high-frequency operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NM50N | DPAK package (TO-252), higher Rthj-case = 2.5 °C/W, same RDS(on) and Qg | Limited to ≤ 50 W continuous dissipation; unsuitable for >70 °C ambient without oversized heatsink | Select when board space is constrained and thermal budget permits lower power density |
| IPP60R190C6 | 600 V, 0.19 Ω RDS(on), 32 nC Qg, CoolMOS™ C6 technology, TO-220FP | Higher voltage margin but slower switching; requires larger gate driver due to higher Qg | Prefer for 600 V systems needing tighter RDS(on) tolerance, accepting trade-off in switching speed and layout complexity |
Compared with STP14NM50N, STD14NM50N delivers 45% lower thermal resistance and 20% higher power capability in the same footprint; versus IPP60R190C6, it offers faster switching and simpler gate drive at the cost of 100 V lower VDS rating.
Availability
STD14NM50N is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.
Supply support for STD14NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STD14NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and industrial motor drives where low RDS(on) and rugged avalanche performance are critical.
FAQ
Is STD14NM50N suitable for use in automotive applications?
No. STD14NM50N is not qualified for automotive use per ST's official documentation. It lacks AEC-Q101 qualification, has no specified automotive temperature range (−40 °C to 150 °C), and is explicitly excluded from safety-critical, automotive, or aerospace applications per the datasheet's "Please Read Carefully" section.
What is the maximum continuous drain current at TC = 100 °C?
The maximum continuous drain current is 8 A at case temperature TC = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced channel mobility and increased RDS(on) at elevated temperatures, not device failure.
Does STD14NM50N have integrated gate protection?
No. STD14NM50N does not include integrated gate protection diodes or Zener clamps. The absolute maximum VGS rating is ±25 V; external gate protection (e.g., 18 V Zener clamp) is required in noisy or high-dV/dt environments to prevent oxide damage.
Can STD14NM50N replace STB14NM50N in existing designs?
Yes-STD14NM50N and STB14NM50N share identical electrical specifications, pinout, package (D²PAK), and thermal characteristics per ST's documentation. The prefix change reflects internal ST part numbering revision; no design requalification is needed for drop-in replacement.
STD14NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 816 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 90W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD14NM50N FAQ
1.How can I place an order for STD14NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STD14NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD14NM50N reliable?
The price and inventory of STD14NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD14NM50N is usually 5 days.
3.What payment methods are accepted for STD14NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD14NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD14NM50N?
STD14NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD14NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD14NM50N?
For technical support, including STD14NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD14NM50N requirements.
6.How does Aetrix verify that STD14NM50N is sourced from the original manufacturer or authorized distributors?
All STD14NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD14NM50N meets industry standards.
7.What is the process for return or replacement of STD14NM50N?
All STD14NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STD14NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD14NM50N part is unused and in its original packaging.
Return procedure for STD14NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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