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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD150N3LLH6

Name: STD150N3LLH6
Brand: STMicroelectronics
SKU: STD150N3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD150N3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD150N3LLH6.pdf

Description:: MOSFET N-CH 30V 80A DPAK

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Product details

Overview

STD150N3LLH6 from STMicroelectronics is an N-channel 30 V, 80 A Power MOSFET in DPAK package, featuring 2.4 mΩ R_DS(on) at V_GS = 10 V and 40 A, high avalanche ruggedness (525 mJ), and low gate charge (40 nC). It serves as a primary switching device in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the STD150N3LLH6 datasheet, STD150N3LLH6 pinout, STD150N3LLH6 application, or STD150N3LLH6 equivalent, key selection criteria include R_DS(on) at 4.5 V (max 4.5 mΩ), thermal resistance (1.36 °C/W junction-to-case), unclamped inductive switching capability, and DPAK tape-and-reel packaging for automated assembly.

Technical Context

This MOSFET employs ST's STripFET™ VI DeepGATE™ process, integrating a refined gate structure to minimize R_DS(on) × Q_g figure-of-merit. Its optimized cell layout delivers industry-benchmark conduction and switching loss trade-offs for high-frequency synchronous rectification.

The device supports robust operation under repetitive avalanche conditions (T_j ≤ 175 °C) and features a fast source-drain diode with t_rr = 34 ns and Q_rr = 35 nC at I_SD = 80 A, enabling efficient hard-switched flyback and LLC resonant converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V nominal bus systems with transient margin.
R_DS(on) max	2.8 mΩ @ V_GS = 10 V, I_D = 40 A - Enables <1.1 W conduction loss at 80 A continuous current in PCB-limited thermal designs.
I_D cont	80 A @ T_C = 25 °C - Sustains full rated current with adequate heatsinking; derates linearly above 25 °C case temperature.
E_AS	525 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients without external snubbers.
Q_g	40 nC - Total gate charge determines driver strength requirement; enables 100 kHz+ switching with standard 2 A peak gate drivers.
R_thj-case	1.36 °C/W - Junction-to-case thermal resistance defines minimum heatsink interface performance needed to maintain T_j ≤ 175 °C.
t_r/t_f	18 ns / 46 ns - Rise/fall times measured with 4.7 Ω gate resistor; supports high-efficiency, low EMI hard-switching up to 500 kHz.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, single-die power MOSFET with exposed drain pad for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires 10 V for full enhancement; threshold voltage 1–2.5 V.
2 (Source)	Reference node	Common return path for load current and gate drive reference; connects to power ground plane.
3 (Drain)	Power output	High-current output terminal; electrically and thermally connected to large copper area on PCB.

Key Features

Feature	Design Value
STripFET™ VI DeepGATE™ process	Delivers lowest R_DS(on) × Q_g among 30 V DPAK MOSFETs, reducing combined conduction and switching losses.
High avalanche ruggedness	Rated for 525 mJ single-pulse avalanche energy, eliminating need for external clamping in inductive load circuits.
Low gate drive power loss	Q_gs = 16.3 nC and Q_gd = 15.8 nC enable efficient driving with minimal gate driver IC power dissipation.
Fast source-drain diode	34 ns reverse recovery time and 35 nC Q_rr reduce body diode conduction loss and EMI in synchronous rectifier and half-bridge applications.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in 24 V industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; commutated at 20–40 kHz.

Use Value: 2.8 mΩ R_DS(on) limits conduction loss to ≤1.8 W at 80 A, enabling compact heatsink design.

Use Scenario: Secondary-side synchronous rectifier in 24 V input, 5 V/60 A isolated DC-DC converter.

IC Role / Device Role / Timing Role: Active rectifying switch replacing Schottky diode; driven complementary to primary-side FET.

Use Value: 34 ns t_rr minimizes reverse recovery loss and shoot-through risk during dead-time transitions.

Hot-Swap Controller

Load Switch for Server PSU Rails

Use Scenario: Inrush current limiting and fault protection in 12 V/48 V backplane power distribution.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap IC; operates in linear and saturated regions.

Use Value: 175 °C max junction temperature and 1.36 °C/W R_thj-case support sustained 80 A operation during short-duration overload events.

Use Scenario: High-current rail enable switch for CPU core voltage (V_DD) in enterprise server power supplies.

IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; controlled via PMBus or GPIO signal.

Use Value: 80 A continuous rating and 320 A pulsed current capability ensure reliable turn-on under full load with no voltage droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 49 nC; TO-220 package	Higher thermal resistance (1.7 °C/W); requires larger heatsink for same current	Preferred where through-hole mounting and higher surge current margin are prioritized over board space.
SUD15N03-60-E3	R_DS(on) = 2.9 mΩ @ 10 V; Q_g = 32 nC; SO-8 package	Lower current rating (15 A); unsuitable for >20 A continuous loads	Only viable for low-power auxiliary rails or signal-switching roles-not a direct replacement for 80 A main switching.

Compared with IRL1404ZPBF and SUD15N03-60-E3, STD150N3LLH6 offers superior R_DS(on) × Q_g balance and 80 A continuous capability in a compact DPAK footprint-critical for high-density, high-efficiency 24 V power stages.

Availability

STD150N3LLH6 is available at Aetrix Electronics and suitable for motor drives, server power supplies, and industrial hot-swap modules requiring stable component supply and DPAK-compatible automated assembly.

Supply support for STD150N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STD150N3LLH6 belongs to ST's STripFET™ VI DeepGATE™ power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–30 V DC systems such as motor controllers and telecom/server power supplies.

FAQ

What is the maximum safe operating temperature for STD150N3LLH6?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 °C to +175 °C. Operation above 150 °C requires careful thermal design due to accelerated parameter drift; derating curves in the datasheet define usable current vs. case temperature.

Does STD150N3LLH6 require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's 1.4 Ω gate input resistance and 40 nC total gate charge make it susceptible to oscillation without proper gate drive impedance matching.

Can STD150N3LLH6 be used in parallel configurations?

Yes, but only with matched gate drive paths and symmetrical PCB layout. Its positive temperature coefficient of R_DS(on) supports current sharing; however, thermal coupling between paralleled devices must be minimized to avoid thermal runaway at high ambient temperatures.

Is STD150N3LLH6 compliant with RoHS and REACH regulations?

Yes-STD150N3LLH6 is manufactured in ST's ECOPACK®-compliant DPAK package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, with lead-free terminations and halogen-free molding compound per ST's published environmental documentation.

STD150N3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD150N3LLH6 FAQ

1.How can I place an order for STD150N3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD150N3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD150N3LLH6 reliable?

The price and inventory of STD150N3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD150N3LLH6 is usually 5 days.

3.What payment methods are accepted for STD150N3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD150N3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD150N3LLH6?

STD150N3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD150N3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD150N3LLH6?

For technical support, including STD150N3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD150N3LLH6 requirements.

6.How does Aetrix verify that STD150N3LLH6 is sourced from the original manufacturer or authorized distributors?

All STD150N3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD150N3LLH6 meets industry standards.

7.What is the process for return or replacement of STD150N3LLH6?

All STD150N3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STD150N3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD150N3LLH6 part is unused and in its original packaging.

Return procedure for STD150N3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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