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STMicroelectronics STD150NH02L-1
- Part No.:
- STD150NH02L-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
STD150NH02L-1.pdf
- Description:
- MOSFET N-CH 24V 150A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,043
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Product details
Overview
STD150NH02L-1 from STMicroelectronics is an N-channel Power MOSFET in IPAK (TO-251) package, rated for 24 V VDSS, 150 A continuous drain current at TC = 25°C, and ultra-low RDS(on) of 3.0 mΩ at VGS = 10 V. It employs STripFET™ III technology with bondless assembly to minimize conduction and switching losses, and is optimized for high-current synchronous buck converters in DC-DC power supplies.
For engineers reviewing the STD150NH02L-1 datasheet, STD150NH02L-1 pinout, STD150NH02L-1 application, or STD150NH02L-1 equivalent, key selection criteria include its low Qgls (64 nC), low Coss (1126 pF), fast tf (40 ns), 1.15 V source-drain diode forward voltage, and thermal resistance RthJC of 1.2 °C/W - all critical for high-efficiency, high-density power stage design.
Technical Context
This MOSFET is engineered for low-side switching in synchronous buck topologies, where its low RDS(on) minimizes conduction loss and its low Qgls and Coss reduce gate drive and output capacitance losses during dead-time transitions. Its 1.15 V VSD at ISD = 75 A and 47 ns trr support efficient body-diode commutation.
The device features a 1 V–1.8 V gate threshold (VGS(th)) enabling robust 5 V logic-level drive compatibility, and operates up to TJ = 175 °C with 500 mJ single-pulse avalanche energy rating - confirming ruggedness under transient overvoltage conditions in unclamped inductive loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 24 V - Maximum blocking voltage in high-side or low-side switch position without breakdown |
| RDS(on) @ VGS=10 V | 0.003 Ω - Enables ≤ 67.5 W conduction loss at 150 A, critical for <95% efficiency in 12 V→1 V VRMs |
| ID (continuous) | 150 A @ TC = 25°C - Supports high-output-current DC-DC stages without parallel devices |
| Qgls | 64 nC - Third-quadrant gate charge directly impacts dead-time loss in synchronous rectification |
| tf | 40 ns - Fast fall time reduces switching transition loss and EMI generation in >500 kHz converters |
| RthJC | 1.2 °C/W - Enables direct heatsinking to PCB copper or external heatsink for thermal management at full load |
| VSD @ ISD=75 A | 1.15 V - Low body-diode forward drop reduces reverse-recovery loss when used as low-side switch |
Pinout & Package
STD150NH02L-1 uses the IPAK (TO-251) surface-mount package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain tab provides low-inductance, high-current path and serves as primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-current power output node | Electrically and thermally connected to PCB copper pour; must be soldered to large thermal pad for RthJC compliance |
| Source (Pin 1) | Reference node for gate drive and current sensing | Low-inductance connection essential for stable gate control and accurate current monitoring in synchronous buck |
| Gate (Pin 2) | Control input for channel modulation | Requires <4.7 Ω series gate resistor to limit ringing and ensure tr/tf within spec (224 ns / 40 ns) |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ III process with bondless assembly | Enables 0.003 Ω RDS(on) in IPAK outline - eliminates need for larger DPAK or paralleling |
| Low Qgls (64 nC) | Reduces third-quadrant gate loss during synchronous rectification, improving light-load efficiency |
| Low Coss (1126 pF) | Minimizes capacitive turn-on loss in high-frequency buck converters (>1 MHz operation feasible) |
| 1.15 V VSD @ 75 A | Lowers body-diode conduction loss during dead time, reducing heat generation in low-side position |
| 500 mJ EAS | Confirms ruggedness against inductive switching transients without external snubbers in typical VRM layouts |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-current, multi-phase 12 V input → 0.8–1.8 V output VRM supplying CPU/GPU core power in datacenter servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with precise dead-time control. Use Value: 0.003 Ω RDS(on) and 64 nC Qgls enable ≥94% peak efficiency at 150 A per phase while maintaining <75 °C junction temperature. |
Use Scenario: 24 V industrial bus → 5/3.3 V isolated or non-isolated DC-DC converter for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Primary low-side switch in non-isolated buck regulator delivering up to 100 W continuous output. Use Value: 150 A rating and 1.2 °C/W RthJC allow full-rated operation on 2 oz copper with minimal heatsinking, reducing BOM cost and footprint. |
| Automotive Body Control Module | Telecom Rectifier Board |
|
Use Scenario: 12 V battery-fed buck converter powering infotainment SoC and CAN transceivers in automotive BCMs. IC Role / Device Role / Timing Role: Low-side FET in 400 kHz synchronous buck with 150 °C max ambient requirement. Use Value: 175 °C Tstg and 500 mJ EAS ensure reliability under load dump and cold-crank conditions without derating. |
Use Scenario: 48 V telecom rectifier board converting to 12 V intermediate bus for downstream POL converters. IC Role / Device Role / Timing Role: High-current low-side switch in multiphase interleaved buck stage handling >200 A total output. Use Value: Low Coss (1126 pF) and fast tf (40 ns) reduce switching loss across phases, enabling >96% system efficiency at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.0 mΩ @ 10 V; Qg = 131 nC; TO-220 package | Higher conduction loss (+33%) and slower switching due to higher Qg and larger package inductance | Acceptable only if thermal margin exists and frequency ≤ 200 kHz; not suitable for space-constrained designs |
| STP160NF04 | VDSS = 40 V; RDS(on) = 3.5 mΩ @ 10 V; D2PAK package | Higher voltage rating adds unnecessary silicon cost; larger footprint increases layout parasitics | Preferred only if 40 V system margin is required; otherwise inferior RDS(on)/size ratio vs. STD150NH02L-1 |
Compared with IRF1404PBF and STP160NF04, STD150NH02L-1 delivers the lowest RDS(on) in IPAK, best Qgls-to-RDS(on) ratio for synchronous rectification, and smallest thermal resistance - making it optimal for high-density, high-efficiency 24 V input power stages.
Availability
STD150NH02L-1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-lifecycle availability, and traceable sourcing.
Supply support for STD150NH02L-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and MEMS products for industrial, automotive, and consumer markets.
STD150NH02L-1 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion in computing, telecom, and industrial power supplies where efficiency, thermal performance, and footprint are critical.
FAQ
What is the maximum continuous drain current for STD150NH02L-1 at 100°C case temperature?
The datasheet specifies ID = 107 A at TC = 100°C. This derating reflects thermal limits of the IPAK package and ensures safe operation within the SOA curve. At this condition, RDS(on) rises to ~0.004 Ω due to positive temperature coefficient, increasing conduction loss by ~33% versus 25°C rating.
Can STD150NH02L-1 be driven directly by a 5 V microcontroller GPIO?
No - VGS(th) is 1–1.8 V, but full enhancement requires ≥10 V for specified RDS(on). Driving with 5 V yields RDS(on) ≈ 0.0065 Ω (per Table 3), doubling conduction loss. A dedicated gate driver (e.g., STMicroelectronics STL6N3LLH6) is required to deliver 10–12 V with ≥2 A peak current.
Is the STD150NH02L-1 RoHS-compliant and lead-free?
Yes - the device carries ECOPACK® certification with lead-free second-level interconnect, compliant with JEDEC JESD97. The inner box label indicates "Lead-free" and specifies maximum soldering temperature (275 °C) and reflow profile per IPC/JEDEC J-STD-020.
What is the significance of Qgls = 64 nC in synchronous buck operation?
Qgls (third-quadrant gate charge) determines gate drive energy needed during body-diode conduction before turn-on. In low-side operation, low Qgls minimizes gate loss during dead time, directly improving light-load efficiency and reducing driver IC thermal stress compared to devices with Qgls > 100 nC.
STD150NH02L-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ III
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 24 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 93 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4450 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
STD150NH02L-1 FAQ
1.How can I place an order for STD150NH02L-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD150NH02L-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD150NH02L-1 reliable?
The price and inventory of STD150NH02L-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD150NH02L-1 is usually 5 days.
3.What payment methods are accepted for STD150NH02L-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD150NH02L-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD150NH02L-1?
STD150NH02L-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD150NH02L-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD150NH02L-1?
For technical support, including STD150NH02L-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD150NH02L-1 requirements.
6.How does Aetrix verify that STD150NH02L-1 is sourced from the original manufacturer or authorized distributors?
All STD150NH02L-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD150NH02L-1 meets industry standards.
7.What is the process for return or replacement of STD150NH02L-1?
All STD150NH02L-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD150NH02L-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD150NH02L-1 part is unused and in its original packaging.
Return procedure for STD150NH02L-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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