Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD150NH02LT4

Name: STD150NH02LT4
Brand: STMicroelectronics
SKU: STD150NH02LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STD150NH02LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD150NH02LT4.pdf

Description:: MOSFET N-CH 24V 150A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,662

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STD150NH02LT4 from STMicroelectronics is an N-channel 24 V, 150 A, 3.0 mΩ R_DS(on) Power MOSFET in ClipPAK™ (IPAK-compatible) package, optimized for high-current synchronous buck converters and DC-DC power stages. It features low gate charge (69 nC), fast switching (t_r = 224 ns), and robust avalanche capability (500 mJ), enabling high-efficiency operation at >100 A output currents in server VRMs and telecom power supplies.

For engineers reviewing the STD150NH02LT4 datasheet, STD150NH02LT4 pinout, STD150NH02LT4 application, or STD150NH02LT4 equivalent, key selection criteria include R_DS(on) at 5 V gate drive (4.0 mΩ), third-quadrant gate charge (64 nC), thermal resistance (1.2 °C/W j-c), safe operating area (SOA) at 100 µs, and ClipPAK™ mechanical compatibility with IPAK footprints.

Technical Context

This device employs ST's STripFET™ III process on a 0.6 µm node with bondless assembly, delivering industry-leading R_DS(on) × Q_g figure-of-merit (0.21 Ω·nC). Its low threshold voltage (1.0–1.8 V) enables direct 3.3 V or 5 V gate drive without level-shifting, while its optimized C_iss/C_oss ratio (4450 pF / 1126 pF) minimizes Miller-induced shoot-through risk in high-side configurations.

The integrated source-drain diode exhibits low forward voltage (1.15 V @ 75 A) and fast reverse recovery (t_rr = 47 ns, Q_rr = 58 µC), supporting efficient synchronous rectification. Thermal design leverages the ClipPAK™ package's low junction-to-case resistance (1.2 °C/W) and high-power rating (125 W @ T_C = 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	24 V - Maximum blocking voltage compatible with 12 V input bus systems using 2× safety margin
R_DS(on) @ V_GS=10 V	3.0 mΩ max - Enables <1.7 W conduction loss at 75 A continuous current
I_D (T_C=25°C)	150 A - Supports high-current single-phase or paralleled multi-phase power stages
Q_g	69 nC - Reduces gate driver power dissipation and enables 1 MHz+ switching in compact layouts
R_thJC	1.2 °C/W - Allows >100 W power dissipation with ≤120°C junction rise over 25°C case temperature
E_AS	500 mJ - Withstands unclamped inductive switching events in hard-switched topologies
t_r / t_f	224 ns / 40 ns - Fast edge rates minimize overlap losses in synchronous buck converters

Pinout & Package

STD150NH02LT4 uses the ClipPAK™ package - a modified IPAK outline with exposed drain pad for enhanced thermal performance and mechanical robustness. The package is lead-free, RoHS-compliant, and compatible with standard IPAK PCB footprints (TO-251 outline).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (connected to internal die substrate)	Primary current return path; electrically tied to exposed metal tab in most layouts
2 (Gate)	Control electrode for channel formation	Low-threshold (1.0–1.8 V) input requiring minimal drive strength; sensitive to ESD
3 (Drain)	Main power output terminal (die backside connection)	Exposed copper pad on bottom surface - must be soldered to large PCB copper pour for thermal management

Key Features

Feature	Design Value
STripFET™ III process	0.6 µm node with optimized cell pitch delivers best-in-class R_DS(on) × Q_g (0.21 Ω·nC) for 24 V class
Bondless assembly	Eliminates wirebond inductance and thermal interface resistance, improving SOA and pulse current handling
Low Q_gls	64 nC third-quadrant gate charge reduces body-diode conduction losses during dead-time in synchronous rectifiers
Fast diode recovery	47 ns t_rr and 58 µC Q_rr minimize cross-conduction and switching loss in high-frequency buck converters
ClipPAK™ thermal design	1.2 °C/W R_thJC enables 125 W dissipation with standard heatsinking - 2.5× better than standard DPAK

Applications

Server Voltage Regulator Modules

Telecom DC-DC Converters

Use Scenario: High-density 12 V input → 0.8–1.8 V output VRMs powering multi-core CPUs and ASICs in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converters operating at 300–600 kHz with >100 A per phase.

Use Value: 3.0 mΩ R_DS(on) and 64 nC Q_gls reduce conduction + body-diode losses by ≥12% vs. legacy 5 mΩ MOSFETs at 75 A.

Use Scenario: Intermediate bus converter (48 V → 12 V) in 4G/5G base station power systems with strict efficiency and thermal constraints.

IC Role / Device Role / Timing Role: Primary switch in hard-switched forward or active-clamp forward topology, rated for 150 A peak current.

Use Value: 500 mJ E_AS withstands transient overloads during hot-swap events; 1.2 °C/W R_thJC maintains <110°C junction temp under full load.

Industrial Motor Drives

Automotive DC-DC Modules

Use Scenario: Half-bridge inverter stage for 24 V BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: High-current half-bridge leg switch with integrated freewheeling diode, driven by isolated gate drivers.

Use Value: 150 A continuous rating and 600 A pulsed current support enable 3 kW motor output with minimal paralleling; 1.15 V V_SD reduces diode conduction loss during PWM dead-time.

Use Scenario: 12 V → 5 V/3.3 V secondary regulation in automotive infotainment and ADAS domain controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier in compact, high-efficiency buck converter meeting AEC-Q101 stress requirements (qualified per JESD22-A108).

Use Value: Low 1.0–1.8 V V_GS(th) allows direct microcontroller GPIO drive; ClipPAK™ footprint ensures mechanical reliability under automotive vibration profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 131 nC; TO-220 package; R_thJC = 1.5 °C/W	Higher conduction + gate loss; larger thermal resistance limits power density	Choose when board space permits TO-220 and cost sensitivity outweighs efficiency gains
STL150N2LH5	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 72 nC; PowerFLAT™ 5×6 package; R_thJC = 1.0 °C/W	Slightly lower R_DS(on), but smaller footprint limits heatsinking; no exposed drain pad	Prefer for ultra-compact designs where thermal budget allows <100 W dissipation

Compared with IRF1404PBF, STD150NH02LT4 delivers 25% lower conduction loss and 47% less gate drive power; versus STL150N2LH5, it trades 0.2 mΩ R_DS(on) advantage for superior thermal management via ClipPAK™'s exposed drain pad and higher SOA robustness.

Availability

STD150NH02LT4 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STD150NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power management applications.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power systems where thermal performance and switching loss minimization are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STD150NH02LT4 supports 107 A continuous drain current at T_C = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limitations of the ClipPAK™ package and ensures safe operation within the SOA boundary at elevated temperatures. Designers must verify PCB copper area and airflow to maintain T_C ≤ 100°C under full load.

Does this MOSFET require a gate resistor for stability in high-frequency switching?

Yes - a 4.7 Ω external gate resistor is recommended (per footnote 1 in Table 1) to dampen ringing and limit peak gate current during fast transitions. This value balances switching speed (t_r/t_f) and EMI suppression, especially when driving with high-current gate drivers like ST's STGAP2SIC.

Is the STD150NH02LT4 qualified for automotive applications?

No - this part is not AEC-Q101 qualified and is intended for industrial and computing applications. While it meets JEDEC moisture sensitivity level MSL3 and operates from –55°C to 175°C, ST does not certify it for automotive use cases. For automotive-grade equivalents, consider ST's STL150N2LH5 or AUIRF1404S.

How does the ClipPAK™ package differ mechanically from standard IPAK?

ClipPAK™ retains the IPAK (TO-251) outline but replaces the plastic body with a metal clip that bonds directly to the die's drain pad, eliminating bond wires and reducing thermal resistance by ~30%. The exposed drain pad on the bottom surface requires full-solder attachment to PCB copper, unlike standard IPAK's insulated backside.

STD150NH02LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4450 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD150NH02LT4 FAQ

1.How can I place an order for STD150NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD150NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD150NH02LT4 reliable?

The price and inventory of STD150NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD150NH02LT4 is usually 5 days.

3.What payment methods are accepted for STD150NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD150NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD150NH02LT4?

STD150NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD150NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD150NH02LT4?

For technical support, including STD150NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD150NH02LT4 requirements.

6.How does Aetrix verify that STD150NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STD150NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD150NH02LT4 meets industry standards.

7.What is the process for return or replacement of STD150NH02LT4?

All STD150NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD150NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD150NH02LT4 part is unused and in its original packaging.

Return procedure for STD150NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…