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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD155N3LH6

Name: STD155N3LH6
Brand: STMicroelectronics
SKU: STD155N3LH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD155N3LH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD155N3LH6.pdf

Description:: MOSFET N-CH 30V 80A DPAK

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Product details

Overview

STD155N3LH6 from STMicroelectronics is an N-channel 30 V, 2.4 mΩ (typ), 80 A logic-level Power MOSFET in DPAK (TO-252) package, fabricated using STripFET™ VI DeepGATE™ technology. It delivers ultra-low R_DS(on) for high-efficiency switching in automotive and industrial DC-DC converters, motor drivers, and load switches.

For engineers reviewing the STD155N3LH6 datasheet, STD155N3LH6 pinout, STD155N3LH6 application, or STD155N3LH6 equivalent, key selection criteria include its 30 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-tested ruggedness, logic-level gate drive compatibility, and DPAK thermal performance with R_thj-case = 1.36 °C/W.

Technical Context

This device employs ST's 6th-generation STripFET™ VI process with a DeepGATE™ gate structure to minimize conduction and switching losses. Its low 2.4 mΩ R_DS(on) and 80 nC total gate charge enable high-current, high-frequency operation in synchronous rectification and PWM-controlled power stages.

The MOSFET supports robust unclamped inductive switching with 525 mJ single-pulse avalanche energy (E_AS) and features a fast body diode (t_rr = 35 ns, Q_rr = 26.5 nC), making it suitable for hard-switched topologies where diode recovery impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines use in ≤24 V nominal systems with margin for transients.
R_DS(on) max	3.0 mΩ at V_GS = 10 V - Ensures <192 mW conduction loss at 80 A, critical for thermally constrained DPAK layouts.
I_D continuous	80 A at T_C = 25 °C - Sustained current capability limited by package wire bonding, not die area.
Q_g	80 nC - Gate drive energy requirement determines driver sizing and switching speed trade-offs in 100–500 kHz designs.
E_AS	525 mJ - Avalanche ruggedness enables reliable operation under inductive fault conditions without external snubbers.
R_thj-case	1.36 °C/W - Enables 81 W dissipation at ΔT = 110 °C (T_j = 175 °C, T_C = 65 °C), defining heatsink requirements.
t_r/t_f	15 ns / 40 ns - Fast edge rates reduce switching losses but require careful PCB layout to manage dV/dt-induced shoot-through risk.

Pinout & Package

STD155N3LH6 uses the DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The three terminals are arranged in a single-row configuration with G-S-D pin order (viewed from top, marking side up).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	Control terminal; logic-level compatible (V_GS(th) = 1–2.5 V); requires low-impedance drive to minimize switching losses.
Pin 2 (Center)	Source (S)	Power return path; tied to ground or low-side reference; forms common node with gate driver return.
Tab (Bottom)	Drain (D)	Main power output terminal; electrically and thermally connected to PCB copper pour; must be isolated from other nets.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 40 A I_AV and 525 mJ E_AS per unit-no screening waivers, enabling fail-safe design in automotive load-dump scenarios.
Logic-level gate drive	V_GS(th) as low as 1 V ensures full enhancement with 3.3 V or 5 V microcontroller outputs, eliminating level-shifter complexity.
STripFET™ VI DeepGATE™	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs prior generations-directly improving efficiency in high-frequency SMPS.
Low R_thj-pcb	50 °C/W (on 1 in² 1 oz Cu) enables effective passive cooling in space-constrained industrial modules without dedicated heatsinks.

Applications

Automotive Body Control Module

Industrial DC Motor Driver

Use Scenario: High-side power distribution for door locks, window lifts, and lighting in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC; operates in on/off mode with <100 µs transition times.

Use Value: 30 V rating accommodates ISO 7637-2 pulse 5a (±100 V transient), while 80 A rating supports peak lock actuator currents without derating.

Use Scenario: Half-bridge low-side switch in 24 V brushed DC motor controllers for HVAC actuators and conveyor systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM switch; commutated at 20–50 kHz with dead-time control.

Use Value: 2.4 mΩ R_DS(on) limits I²R loss to <15.4 W at 80 A, reducing heatsink mass by 40% vs comparable 4.5 mΩ devices.

Server PSU ORing FET

Telecom DC-DC Converter

Use Scenario: Hot-swap and redundancy ORing in 12 V intermediate bus architectures with strict efficiency targets.

IC Role / Device Role / Timing Role: Low-side ORing FET controlled by ideal diode controller; conducts continuously during normal operation.

Use Value: Ultra-low R_DS(on) cuts conduction loss by >35% versus standard 5 mΩ DPAK MOSFETs, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V flyback or forward converters for base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch; driven with adaptive gate timing to minimize reverse recovery loss.

Use Value: 35 ns t_rr and 26.5 nC Q_rr reduce diode recovery loss by 60% vs legacy silicon, lowering temperature rise in compact 1U enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3709ZPBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 42 nC; TO-220 package	Higher conduction loss; through-hole mounting; no DPAK footprint compatibility	Select when board space allows TO-220 and thermal mass reduces need for ultra-low R_DS(on).
DMTH3007LPS	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 52 nC; PowerSO-8 package	Lower current rating (60 A); smaller footprint; higher R_thj-pcb (65 °C/W)	Select for space-constrained designs where 60 A suffices and SO-8 reflow compatibility is required.

Compared with IRF3709ZPBF and DMTH3007LPS, STD155N3LH6 offers the lowest R_DS(on) in DPAK form factor, enabling highest current density and best thermal performance in surface-mount automotive and industrial power stages-critical where 80 A must be sustained within tight thermal budgets.

Availability

STD155N3LH6 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server ORing circuits, and telecom DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STD155N3LH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–48 V systems where low R_DS(on), avalanche ruggedness, and logic-level drive are mandatory.

FAQ

What is the maximum safe operating junction temperature for STD155N3LH6?

The absolute maximum operating junction temperature (T_j) is 175 °C, as defined in Table 2 of the datasheet. Continuous operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves in Figure 2 confirm safe operation up to 80 A at T_C = 100 °C only when R_thj-case ≤ 1.36 °C/W is maintained via adequate PCB copper and thermal vias.

Does STD155N3LH6 require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω, per Figure 15 test circuit) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dV/dt coupling. Without it, measured t_d(on) and t_r increase unpredictably, and oscillation may exceed V_GS = ±20 V absolute maximum, risking gate oxide damage.

Can STD155N3LH6 be used in high-side switching configurations?

Yes, but only with a dedicated high-side gate driver capable of providing V_GS ≥ 10 V referenced to the source (e.g., bootstrap or isolated driver). As an N-channel device, it cannot self-drive in high-side position without level-shifting; direct microcontroller connection is unsafe due to source potential swing during switching.

Is STD155N3LH6 compliant with automotive AEC-Q101 qualification?

No-the datasheet does not list AEC-Q101 qualification, and the device summary (Table 1) specifies "Automotive" only as a target application, not qualification status. For production automotive use, ST recommends AEC-Q101-qualified equivalents such as STL155N3LH6 (same die in automotive-grade packaging and testing).

STD155N3LH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD155N3LH6 FAQ

1.How can I place an order for STD155N3LH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD155N3LH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD155N3LH6 reliable?

The price and inventory of STD155N3LH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD155N3LH6 is usually 5 days.

3.What payment methods are accepted for STD155N3LH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD155N3LH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD155N3LH6?

STD155N3LH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD155N3LH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD155N3LH6?

For technical support, including STD155N3LH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD155N3LH6 requirements.

6.How does Aetrix verify that STD155N3LH6 is sourced from the original manufacturer or authorized distributors?

All STD155N3LH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD155N3LH6 meets industry standards.

7.What is the process for return or replacement of STD155N3LH6?

All STD155N3LH6 units undergo pre-shipment inspection (PSI). If there is an issue with STD155N3LH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD155N3LH6 part is unused and in its original packaging.

Return procedure for STD155N3LH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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