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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD15N60M2-EP

Name: STD15N60M2-EP
Brand: STMicroelectronics
SKU: STD15N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD15N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD15N60M2-EP.pdf

Description:: MOSFET N-CH 600V 11A DPAK

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Product details

Overview

STD15N60M2-EP from STMicroelectronics is an N-channel 600 V, 11 A Power MOSFET in DPAK (TO-252) package, featuring 0.340 Ω typ. R_DS(on), 17 nC total gate charge, and 125 mJ single-pulse avalanche energy. It uses MDmesh™ M2 EP technology for ultra-low turn-off switching losses and is engineered for high-frequency SMPS (>150 kHz) in industrial power supplies.

For engineers reviewing the STD15N60M2-EP datasheet, STD15N60M2-EP pinout, STD15N60M2-EP application, or STD15N60M2-EP equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 1.14 °C/W junction-to-case thermal resistance, Zener-protected gate, and optimized C_oss profile for resonant and hard-switching topologies.

Technical Context

This device employs ST's MDmesh™ M2 EP strip layout and enhanced vertical structure to achieve low conduction loss while maintaining fast, soft switching behavior. Its 148 pF equivalent output capacitance (C_oss,eq) and 7.3 nC gate-drain charge enable efficient operation above 150 kHz with minimal E_off (4.7–5.2 µJ at 1.5–3.5 A).

The MOSFET integrates a robust body diode with 280 ns reverse recovery time (T_j = 25 °C) and 19.5 A peak reverse recovery current, supported by 100% unclamped inductive switching (UIS) testing. Gate threshold voltage is tightly specified at 2–4 V, ensuring stable turn-on across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	600 V - supports 400 V bus designs with ≥50 % voltage margin for transient suppression
R_DS(on) max	0.378 Ω @ 10 V_GS, 5.5 A - enables <1.5 W conduction loss at 11 A continuous drain current
Q_g	17 nC - reduces gate drive power and allows use of smaller, lower-cost drivers
E_off	4.7–5.2 µJ - minimizes heat generation during high-frequency switching transitions
T_j max	150 °C - permits operation in thermally constrained industrial enclosures without derating
C_oss,eq	148 pF - delivers predictable timing in LLC and ZVS circuits up to 500 V drain swing
R_thj-case	1.14 °C/W - supports 110 W dissipation with modest heatsinking in DPAK footprint

Pinout & Package

Package: DPAK (TO-252), surface-mount, exposed drain tab for thermal and electrical connection. Standard ECOPACK® compliant, lead-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain / Tab)	Main power output terminal and thermal path	Exposed copper tab electrically connected to drain; must be soldered to PCB copper pour for thermal management
G (Gate)	Control input for channel conduction	High-impedance node requiring low-inductance routing; sensitive to noise due to 2–4 V V_GS(th)
S (Source)	Reference node for gate drive and current return	Common return path for load current and gate loop; critical for minimizing switching oscillation

Key Features

Feature	Design Value
Extremely low gate charge	17 nC total charge enables <1 W gate drive loss at 300 kHz with 12 V drive
Optimized C_oss profile	148 pF C_oss,eq ensures predictable zero-voltage switching in resonant converters
Zener-protected gate	±25 V gate-source rating with integrated protection prevents ESD-induced failure during handling and assembly
100% avalanche tested	125 mJ E_AS rating validated per pulse ensures reliability under inductive fault conditions
Low turn-off switching losses	E_off ≤ 5.2 µJ at 3.5 A confirms suitability for >200 kHz hard-switched PFC stages

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3 kW active clamp forward converter operating at 250 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch managing energy transfer and ZVS transition timing.

Use Value: 0.340 Ω R_DS(on) and 5.2 µJ E_off reduce total losses by 18 % vs. prior-generation 600 V MOSFETs.

Use Scenario: 12 V/200 A secondary-side synchronous rectifier in isolated LLC resonant DC-DC module.

IC Role / Device Role / Timing Role: Low-side freewheeling switch with fast body diode recovery (280 ns) enabling tight dead-time control.

Use Value: 19.5 A I_RRM and soft recovery minimize voltage overshoot and EMI during commutation.

Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC link switching stage in string inverter with 600 V nominal bus and 10 kHz–100 kHz variable frequency modulation.

IC Role / Device Role / Timing Role: Bus voltage clamping and PWM-controlled power delivery with dv/dt ruggedness up to 50 V/ns.

Use Value: 50 V/ns MOSFET dv/dt rating prevents spurious turn-on during fast transients in noisy solar array environments.

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz induction coil in domestic cooktop.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switching element requiring robust UIS capability and low Q_gd/Q_gs ratio.

Use Value: 7.3 nC Q_gd and 1.1 pF Crss suppress Miller-induced shoot-through risk during high di/dt operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH12N60L-TR	Higher R_DS(on) (0.55 Ω), lower Q_g (12 nC), TO-247 package	Requires larger heatsink; better suited for lower-frequency (<100 kHz), higher-current linear operation	Select when thermal mass dominates over switching loss and board space allows TO-247 mounting
IPP60R041C7	Lower R_DS(on) (0.041 Ω), higher C_iss (1950 pF), 650 V rating, PG-TO220 package	Superior conduction efficiency but slower switching; unsuitable for >150 kHz due to excessive C_iss	Prefer for fixed-frequency 50–100 kHz PSUs where conduction loss dominates system efficiency

Compared with IXTH12N60L-TR and IPP60R041C7, STD15N60M2-EP uniquely balances low R_DS(on), low Q_g, and optimized C_oss for high-frequency, space-constrained designs-making it optimal for DPAK-based 150–500 kHz SMPS where thermal and switching losses must both be minimized.

Availability

STD15N60M2-EP is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, photovoltaic inverters, and induction heating systems requiring stable component supply and full production lifecycle support.

Supply support for STD15N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 EP high-voltage Power MOSFET product line, developed specifically for high-efficiency, high-frequency power conversion in compact, thermally demanding applications such as telecom rectifiers and solar inverters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD15N60M2-EP supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries when mounted on standard FR-4 PCB with 1 inch² copper area.

Does this MOSFET include integrated gate protection?

Yes - the STD15N60M2-EP features an integrated Zener diode between gate and source, providing ±25 V absolute maximum gate-source voltage rating and protecting against ESD and gate overvoltage events during PCB handling and circuit operation.

Can it replace older STD15N60M2 devices in existing designs?

Yes - the STD15N60M2-EP is a qualified enhanced-performance variant of STD15N60M2, sharing identical pinout, marking (15N60M2EP), and DPAK packaging. It improves R_DS(on) (0.340 Ω vs. 0.380 Ω typ.), reduces E_off, and adds Zener gate protection without requiring layout changes.

What is the recommended PCB footprint for thermal performance?

Per Figure 21 in the datasheet, the recommended DPAK (TO-252) type A footprint uses a 5.2 mm × 6.4 mm exposed drain pad with ≥1 inch² of 2 oz copper connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves the rated R_thj-pcb = 50 °C/W and supports full 110 W power dissipation.

STD15N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 378mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD15N60M2-EP FAQ

1.How can I place an order for STD15N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STD15N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD15N60M2-EP reliable?

The price and inventory of STD15N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD15N60M2-EP is usually 5 days.

3.What payment methods are accepted for STD15N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD15N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD15N60M2-EP?

STD15N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD15N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD15N60M2-EP?

For technical support, including STD15N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD15N60M2-EP requirements.

6.How does Aetrix verify that STD15N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STD15N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD15N60M2-EP meets industry standards.

7.What is the process for return or replacement of STD15N60M2-EP?

All STD15N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STD15N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD15N60M2-EP part is unused and in its original packaging.

Return procedure for STD15N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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