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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD16N50M2

Name: STD16N50M2
Brand: STMicroelectronics
SKU: STD16N50M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD16N50M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD16N50M2.pdf

Description:: MOSFET N-CH 500V 13A TO252

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Product details

Overview

STD16N50M2 from STMicroelectronics is an N-channel 500 V, 280 mΩ max, 13 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency flyback and PFC converters in industrial SMPS and AC-DC adapters. It delivers low gate charge (19.5 nC), excellent Coss profile (44 pF typ.), and 100% avalanche-tested ruggedness.

For engineers reviewing the STD16N50M2 datasheet, STD16N50M2 pinout, STD16N50M2 application, or STD16N50M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and Zener-protected gate reliability in hard-switching topologies.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and switching energy. Its Coss eq. of 192 pF (0–400 V) enables predictable turn-off behavior in high-voltage resonant and quasi-resonant converters.

The integrated Zener-protected gate withstands ±25 V transient stress, while its 15 V/ns diode recovery dv/dt rating and 215 mJ single-pulse avalanche energy support robust operation in inductive load switching with fast-recovery diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports primary-side switching in 380 V DC bus and universal-input AC-DC systems up to 265 VAC.
R_DS(on) max	280 mΩ at V_GS = 10 V, I_D = 6.5 A - Enables <1.8 W conduction loss at 13 A continuous drain current (T_C = 25 °C).
Q_g	19.5 nC - Reduces gate drive power and allows use of lower-cost, lower-current gate drivers in high-frequency designs.
C_oss	44 pF typ. at V_DS = 100 V - Minimizes capacitive turn-off loss and improves zero-voltage switching (ZVS) margin in LLC converters.
E_AS	215 mJ - Guarantees safe operation under unclamped inductive switching events without external snubbers.
T_J range	−55 to 150 °C - Validated for industrial ambient environments including enclosed power supplies and motor drives.
R_thJC	1.14 °C/W - Enables 110 W power dissipation with modest heatsinking (e.g., 25 mm² copper pad on FR-4).

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended lead configuration; JEDEC standard outline type A2/C3.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain terminal	Exposed metal tab electrically connected to drain; must be soldered to large PCB copper area for thermal management and low-inductance return path.
1 (G)	Gate input	Control terminal requiring <19.5 nC charge for full enhancement; Zener-protected against ±25 V transients.
3 (S)	Source reference	Power source node and gate driver return; connects to ground or low-side switch node; defines V_GS control reference.

Key Features

Feature	Design Value
MDmesh M2 technology	Optimized trade-off between R_DS(on) and Q_g, enabling >94% efficiency in 100–300 kHz PFC stages.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 215 mJ - eliminates need for derating in inductive switching applications.
Zener-protected gate	Integrated gate-source clamp ensures reliable operation without external TVS, reducing BOM count in space-constrained adapters.
Low C_oss profile	C_oss = 44 pF + C_rss = 1.35 pF - minimizes Miller-induced shoot-through risk and improves hard-switching EMI performance.
High dv/dt ruggedness	50 V/ns MOSFET dv/dt rating - sustains rapid voltage transitions during turn-off without false triggering in noisy high-side configurations.

Applications

Industrial SMPS

AC-DC Adapters

Use Scenario: 300–500 W open-frame industrial power supply with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in boost PFC stage and half-bridge LLC primary.

Use Value: Low R_DS(on) and C_oss reduce conduction and switching losses, enabling compact heatsink design and 95% peak efficiency.

Use Scenario: Universal-input (90–265 VAC) 65 W laptop adapter with QR flyback controller.

IC Role / Device Role / Timing Role: Main switching transistor in quasi-resonant flyback topology operating up to 130 kHz.

Use Value: 19.5 nC Q_g and 280 ns trr enable clean zero-current switching transitions, lowering EMI filter cost and size.

Motor Drive Inverters

UPS Systems

Use Scenario: 1–2 kW three-phase inverter for HVAC compressors with discrete IGBT replacement.

IC Role / Device Role / Timing Role: High-side bridge arm switch in 600 V DC bus inverter stage.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on during commutation, eliminating need for negative gate bias.

Use Scenario: Online double-conversion UPS with bidirectional DC-DC stage and battery charging circuitry.

IC Role / Device Role / Timing Role: Synchronous rectifier and buck/boost switch in 400 V intermediate bus converter.

Use Value: 100% avalanche testing ensures reliability during grid fault transients and battery short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N50M2	TO-220 package, identical die and electrical specs; R_thJC = 0.75 °C/W vs. 1.14 °C/W.	Better thermal performance but larger footprint; requires through-hole assembly and heatsink mounting.	Select when higher power derating (>130 W) or legacy through-hole manufacturing is required.
FDPF16N50	500 V, 320 mΩ max, 16 A; higher R_DS(on), no Zener gate protection, C_oss = 65 pF.	Lower cost but reduced dv/dt ruggedness (30 V/ns) and no avalanche rating - unsuitable for unclamped inductive loads.	Select only for cost-sensitive, low-stress fixed-frequency flyback where gate protection and avalanche immunity are not critical.

Compared with STP16N50M2, STD16N50M2 trades 0.39 °C/W higher junction-to-case resistance for surface-mount compatibility and smaller board area; versus FDPF16N50, it delivers superior gate robustness, lower switching loss, and guaranteed avalanche survival - critical for industrial reliability.

Availability

STD16N50M2 is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, motor drive inverters, and UPS systems requiring stable component supply across multi-year production cycles.

Supply support for STD16N50M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD16N50M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power conversion in demanding industrial and computing power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD16N50M2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10450 Rev 7. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries without exceeding 150 °C junction temperature.

Does this MOSFET include integrated gate protection?

Yes - STD16N50M2 features an integrated Zener diode between gate and source, rated for ±25 V, as confirmed in the "Features" section and absolute maximum ratings (V_GS = ±25 V). This eliminates the need for external gate clamping in most industrial applications.

Can STD16N50M2 replace STF16N50M2 in existing designs?

No - STF16N50M2 uses TO-220FP (full-pack) package with different thermal and mechanical characteristics. While electrically identical, the DPAK (STD) and TO-220FP (STF) packages are not interchangeable due to footprint, thermal path, and mounting constraints.

What is the typical reverse recovery time of the body diode?

The body diode exhibits t_rr = 280 ns at T_J = 25 °C and 388 ns at T_J = 150 °C, measured under ISD = 13 A, di/dt = 100 A/µs, and V_DD = 60 V (Table 7). This fast recovery supports high-frequency synchronous rectification and reduces commutation loss in bridge configurations.

STD16N50M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD16N50M2 FAQ

1.How can I place an order for STD16N50M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD16N50M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD16N50M2 reliable?

The price and inventory of STD16N50M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD16N50M2 is usually 5 days.

3.What payment methods are accepted for STD16N50M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD16N50M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD16N50M2?

STD16N50M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD16N50M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD16N50M2?

For technical support, including STD16N50M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD16N50M2 requirements.

6.How does Aetrix verify that STD16N50M2 is sourced from the original manufacturer or authorized distributors?

All STD16N50M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD16N50M2 meets industry standards.

7.What is the process for return or replacement of STD16N50M2?

All STD16N50M2 units undergo pre-shipment inspection (PSI). If there is an issue with STD16N50M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD16N50M2 part is unused and in its original packaging.

Return procedure for STD16N50M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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