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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD16N60M2

Name: STD16N60M2
Brand: STMicroelectronics
SKU: STD16N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD16N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD16N60M2.pdf

Description:: MOSFET N-CH 600V 12A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD16N60M2 from STMicroelectronics is an N-channel 600 V, 12 A Power MOSFET in DPAK (TO-252) package, fabricated with MDmesh M2 technology. It delivers 280 mΩ typical R_DS(on), 19 nC total gate charge, and 38 pF C_oss, enabling high-efficiency hard-switching PFC and SMPS in industrial AC-DC converters.

For engineers reviewing the STD16N60M2 datasheet, STD16N60M2 pinout, STD16N60M2 application, or STD16N60M2 equivalent, key selection criteria include avalanche ruggedness (130 mJ E_AS), dv/dt immunity (50 V/ns), Zener-protected gate, and optimized COSS profile for resonant transitions.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and switching energy. Its low Q_gd/Q_g ratio (9.5 nC / 19 nC) supports fast, controllable turn-off critical for ZVS/ZCS topologies.

The integrated body diode exhibits 316 ns trr at 25 °C and 454 ns at 150 °C under 12 A/100 A/µs conditions, with 3.25 µC Q_rr, making it suitable for continuous conduction mode (CCM) PFC where reverse recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage in 400 VAC systems with margin
R_DS(on) max	320 mΩ - Enables ≤1.92 W conduction loss at 12 A ID, supporting thermally constrained layouts
Q_g	19 nC - Low gate drive power requirement; compatible with standard 1-A peak gate drivers
C_oss	38 pF - Minimizes capacitive turn-on loss and improves light-load efficiency in flyback/LLC
E_AS	130 mJ - Fully tested single-pulse avalanche capability ensures robustness during overvoltage transients
dv/dt ruggedness	50 V/ns - Immune to parasitic turn-on in high-di/dt half-bridge configurations
T_j max	150 °C - Supports operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

STD16N60M2 uses the DPAK (TO-252) package with exposed drain tab for thermal enhancement. The case is electrically connected to the drain terminal, requiring isolation on PCB mounting surfaces.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; requires 10 V drive for full enhancement; Zener-protected to ±25 V
2 (D / TAB)	Drain / Thermal Pad	Main high-side current path and primary heat dissipation surface; electrically tied to drain
3 (S)	Source	Reference node for gate drive and current sensing; connects to power ground or phase node

Key Features

Feature	Design Value
MDmesh M2 technology	Optimized trade-off between R_DS(on) and switching loss-enables >96% efficiency in 1 kW PFC stages
Extremely low gate charge	19 nC total charge reduces driver losses and enables higher-frequency operation up to 200 kHz
Excellent C_oss profile	38 pF measured at 100 V with flat voltage dependence-supports predictable soft-switching timing
100% avalanche tested	Each unit validated for 130 mJ single-pulse energy-guarantees reliability in unclamped inductive switching
Zener-protected gate	Integrated gate oxide protection clamps transients to ±25 V-eliminates need for external gate Zener

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW active PFC front-end operating at 100 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: Main switching device in boost power stage; handles 12 A RMS input current with 600 V blocking.

Use Value: Low C_oss and 50 V/ns dv/dt rating prevent spurious turn-on during phase-leg commutation.

Use Scenario: High-density 48 V intermediate bus converter using asymmetric half-bridge with synchronous rectification.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into output inductor; switched at 300 kHz.

Use Value: 280 mΩ R_DS(on) limits conduction loss to <1.5 W at full load, easing thermal design on compact PCBs.

Motor Drive Inverters

Renewable Energy Inverters

Use Scenario: 7.5 kW three-phase inverter for HVAC compressors, operating at 8 kHz PWM with field-oriented control.

IC Role / Device Role / Timing Role: Phase-leg upper switch; subjected to repetitive unclamped inductive switching during braking.

Use Value: 130 mJ E_AS and 2.9 A I_AR ensure safe operation during regenerative energy spikes without snubbers.

Use Scenario: 5 kW string inverter DC-DC stage converting PV array output (600–1000 V) to 400 V bus.

IC Role / Device Role / Timing Role: Primary switch in LLC resonant converter; operates in ZVS region with high V_DS stress.

Use Value: Flat C_oss vs. V_DS curve (Figure 10) enables precise dead-time tuning for reliable zero-voltage turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N60M2	Same die, TO-220 package; R_thJC = 0.85 °C/W vs. 1.14 °C/W; no exposed drain tab	Higher thermal mass but lower board-level integration; unsuitable for space-constrained SMT designs	Select when forced-air cooling is available and through-hole assembly is preferred
IPP60R190C7	650 V CoolMOS™ P7; 190 mΩ R_DS(on); 22 nC Q_g; no integrated Zener	Better conduction loss but higher gate charge and no built-in gate protection	Select when lowest R_DS(on) is critical and external gate protection is acceptable

Compared with STP16N60M2, STD16N60M2 offers superior board-level thermal management via DPAK drain tab and smaller footprint; versus IPP60R190C7, it trades 110 mΩ higher R_DS(on) for guaranteed gate protection and proven avalanche ruggedness in cost-sensitive industrial designs.

Availability

STD16N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STD16N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD16N60M2 belongs to ST's MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion systems operating up to 600 V.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD16N60M2 supports 7.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10725 Rev 4. This derating reflects thermal limitations of the DPAK package and must be verified against actual PCB copper area and airflow in the target application.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, STD16N60M2 features an integral source-drain diode with 316 ns reverse recovery time (t_rr) and 3.25 µC reverse recovery charge (Q_rr) at 25 °C, per Table 7. These values increase to 454 ns and 4.8 µC at 150 °C junction temperature, directly impacting EMI and switching loss in hard-commutated topologies.

Can STD16N60M2 be used in avalanche mode, and how is it tested?

Yes-every STD16N60M2 unit undergoes 100% single-pulse avalanche testing at 130 mJ (E_AS) with I_AR = 2.9 A, as defined in Table 3. This qualifies it for unclamped inductive switching in motor drives and UPS systems where transient overvoltage may occur without external snubbers.

What is the recommended gate resistor value for 100 kHz hard-switching in a boost PFC stage?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6 test conditions) for V_DD = 300 V, I_D = 6 A, yielding t_d(on) = 10.5 ns and t_f = 18.5 ns. For 100 kHz boost PFC, this value balances switching speed against gate drive stability and EMI; lower values risk ringing, higher values increase switching loss.

STD16N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD16N60M2 FAQ

1.How can I place an order for STD16N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD16N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD16N60M2 reliable?

The price and inventory of STD16N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD16N60M2 is usually 5 days.

3.What payment methods are accepted for STD16N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD16N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD16N60M2?

STD16N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD16N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD16N60M2?

For technical support, including STD16N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD16N60M2 requirements.

6.How does Aetrix verify that STD16N60M2 is sourced from the original manufacturer or authorized distributors?

All STD16N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD16N60M2 meets industry standards.

7.What is the process for return or replacement of STD16N60M2?

All STD16N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STD16N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD16N60M2 part is unused and in its original packaging.

Return procedure for STD16N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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