My Inquiry
My Account
STMicroelectronics STD16N60M6
- Part No.:
- STD16N60M6
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD16N60M6.pdf
- Description:
- MOSFET N-CH 600V 12A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,347
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STD16N60M6 from STMicroelectronics is an N-channel 600 V, 0.260 Ω typ. (0.320 Ω max.), 12 A MDmesh M6 superjunction power MOSFET in DPAK (TO-252) package. It delivers low switching losses, 100% avalanche-tested ruggedness, and Zener-protected gate for high-efficiency LLC and boost PFC converters operating at high voltage and moderate current.
For engineers reviewing the STD16N60M6 datasheet, STD16N60M6 pinout, STD16N60M6 application, or STD16N60M6 equivalent, this device is selected for high-voltage switching topologies requiring robust dv/dt immunity (100 V/ns), low RDS(on) per area, and reliable unclamped inductive switching performance up to 2.5 A repetitive avalanche current.
Technical Context
The STD16N60M6 employs ST's MDmesh M6 silicon technology, featuring optimized charge balancing for reduced Coss (33 pF) and Crss (3 pF), enabling fast switching with low EOSS (e.g., 4.5 µJ at 400 V). Its gate threshold voltage (3.25–4.75 V) and low intrinsic gate resistance (5.2 Ω) support stable drive under noisy conditions.
It integrates a source-drain diode with 1.6 V forward voltage at 12 A and 210 ns reverse recovery time (Tj = 25 °C), making it suitable for synchronous rectification and hard-switched resonant converters where diode recovery behavior directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports primary-side switching in 400 V DC bus applications with 20% margin against transients |
| RDS(on) max | 0.320 Ω - limits conduction loss to ≤4.6 W at 12 A continuous drain current (Tc = 25 °C) |
| ID cont @ Tc = 100 °C | 7.6 A - defines usable current derating in thermally constrained PCB layouts with heatsinking |
| EAS | 110 mJ - enables reliable operation in unclamped inductive switching (UISC) without external snubbers |
| dv/dt ruggedness | 100 V/ns - prevents spurious turn-on during high-slew-rate voltage transitions in bridge configurations |
| Qg | 16.7 nC - determines gate driver power requirement and switching speed trade-off in 100–300 kHz designs |
| Rthj-case | 1.14 °C/W - allows junction temperature rise of ≤125 °C with 110 W dissipation when mounted on ≥10 cm² copper area |
Pinout & Package
DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; standard 3-pin configuration with G-S-D layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±25 V drive; low 5.2 Ω intrinsic resistance minimizes gate loop oscillation risk |
| 2 (D, TAB) | Drain (exposed metal tab) | Main high-voltage output node; electrically and thermally connected to PCB copper pour for heat dissipation |
| 3 (S) | Source | Power return path and reference for gate drive; ties to low-side switch node or ground plane |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh M6 silicon architecture | Reduces RDS(on) per die area by ~25% vs. prior M5 generation, enabling smaller footprint for same conduction loss |
| Zener-protected gate | Integrated 25 V Zener clamps gate-source voltage, eliminating need for external gate protection in most flyback/LLC drivers |
| 100% avalanche tested | Each unit validated for repetitive 2.5 A avalanche current, ensuring reliability in overvoltage fault conditions |
| Low Coss and Crss | 33 pF Coss and 3 pF Crss minimize Miller effect, enabling clean turn-off even with high dv/dt across drain |
| Optimized for PFC and LLC | EOSS curve shows <5 µJ stored energy at 400 V, reducing switching loss and improving light-load efficiency in resonant topologies |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: 1 kW boost PFC stage operating at 65–100 kHz with 400 V DC output. IC Role / Device Role / Timing Role: High-side switching element handling full line current; operates in continuous conduction mode (CCM) with zero-voltage switching assist. Use Value: Low RDS(on) (0.260 Ω typ.) reduces conduction loss by 1.2 W vs. legacy 0.4 Ω devices, improving system efficiency by 0.4% at full load. |
Use Scenario: Primary-side switch in half-bridge LLC resonant converter for 48 V telecom rectifier. IC Role / Device Role / Timing Role: High-voltage switching transistor in resonant tank; subjected to 600 V blocking and 100–300 kHz soft switching. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during dead-time transitions, eliminating need for gate resistors >10 Ω. |
| EV On-Board Chargers (OBC) | Industrial Motor Drives |
|
Use Scenario: Input-stage switching in bidirectional OBC with 800 V battery interface. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in active rectification path; handles 12 A RMS with peak surge currents up to 32 A. Use Value: 110 mJ single-pulse avalanche energy ensures safe operation during IGBT-like short-circuit events without external clamping. |
Use Scenario: Inverter leg switch in 3-phase 400 V industrial drive (<5 kW). IC Role / Device Role / Timing Role: Medium-power switching device in motor phase leg; driven by isolated gate driver with 16.7 nC total gate charge. Use Value: Low Qgd/Qgs ratio (9.4/3.5 ≈ 2.7) improves controllability during Miller plateau, reducing shoot-through risk in high-speed PWM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16N60M2 | Legacy MDmesh M2; RDS(on) max = 0.38 Ω, higher Coss (55 pF), no Zener gate protection | Limited to lower-frequency PFC (<50 kHz); requires external gate clamp and larger heatsink | Select only if cost-sensitive and thermal margin permits higher conduction loss |
| IPP60R190C7 | Infineon CoolMOS C7; RDS(on) max = 0.19 Ω, but higher Qg (34 nC) and no 100% avalanche test | Better conduction loss but demands stronger gate driver; less rugged in unclamped inductive faults | Prefer for ultra-high-efficiency designs where gate drive capability exists and fault immunity is managed externally |
Compared with STP16N60M2 and IPP60R190C7, STD16N60M6 offers the best balance of avalanche ruggedness, gate protection, and mid-range switching performance-ideal for cost-constrained yet reliability-critical industrial PFC and LLC designs without gate driver upgrades.
Availability
STD16N60M6 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server & telecom rectifiers, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STD16N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.
STD16N60M6 belongs to ST's MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in PFC, LLC, and resonant converter topologies demanding low RDS(on), fast switching, and field-proven avalanche reliability.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STD16N60M6 supports 7.6 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS12603 Rev 3. This derating reflects thermal limitations of the DPAK package and must be verified with actual PCB copper area and airflow conditions.
Does STD16N60M6 include integrated gate protection?
Yes - the device integrates a Zener diode between gate and source rated for ±25 V, providing inherent protection against gate oxide breakdown during transient overvoltage events, eliminating the need for external gate clamping in most standard gate driver implementations.
Can STD16N60M6 replace older MDmesh M2 or M3 devices in existing designs?
Yes, with design validation: STD16N60M6 shares identical DPAK package and pinout with STP16N60M2/M3, but offers lower RDS(on), improved dv/dt ruggedness (100 V/ns), and Zener gate protection - all of which may reduce heatsink size and simplify gate drive, though layout parasitics should be rechecked.
What is the typical reverse recovery charge (Qrr) of the body diode at 150 °C?
At Tj = 150 °C, the body diode exhibits Qrr = 3.2 µC under test conditions of ISD = 12 A, di/dt = 100 A/µs, and VDD = 60 V (Table 7, DS12603 Rev 3), which impacts commutation loss and EMI in hard-switched topologies.
STD16N60M6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ M6
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.7 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 575 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
STD16N60M6 FAQ
1.How can I place an order for STD16N60M6 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD16N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD16N60M6 reliable?
The price and inventory of STD16N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD16N60M6 is usually 5 days.
3.What payment methods are accepted for STD16N60M6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD16N60M6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD16N60M6?
STD16N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD16N60M6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD16N60M6?
For technical support, including STD16N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD16N60M6 requirements.
6.How does Aetrix verify that STD16N60M6 is sourced from the original manufacturer or authorized distributors?
All STD16N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD16N60M6 meets industry standards.
7.What is the process for return or replacement of STD16N60M6?
All STD16N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STD16N60M6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD16N60M6 part is unused and in its original packaging.
Return procedure for STD16N60M6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STD16N60M6 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
