STMicroelectronics STD16N65M2

Overview

STD16N65M2 from STMicroelectronics is an N-channel 650 V, 320 mΩ typ. (360 mΩ max.), 11 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency flyback and PFC stages in industrial SMPS and AC-DC adapters. It features 100% avalanche-tested ruggedness, Zener-protected gate, and low Qg (19.5 nC) enabling fast switching with reduced driver loss.

For engineers reviewing the STD16N65M2 datasheet, STD16N65M2 pinout, STD16N65M2 application, or STD16N65M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, Coss eq. of 189 pF at 0–520 V, 360 mJ single-pulse avalanche energy, and suitability for 65–100 kHz hard-switched converters requiring robust body diode recovery (trr = 342 ns at 25 °C).

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance-enabling higher power density without sacrificing switching speed. Its low Crss (1.1 pF) and optimized Coss profile minimize capacitive turn-on loss during zero-voltage switching transitions.

The integrated Zener-protected gate withstands ±25 V transient stress, while the 15 V/ns diode recovery dv/dt rating ensures reliable operation under fast-recovery inductive load conditions. Thermal resistance RthJC is 1.14 °C/W, supporting 110 W dissipation at TC = 25 °C with appropriate heatsinking.

Key Specifications

Pinout & Package

STD16N65M2 uses the DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The package complies with ECOPACK® environmental standards and mounts on FR-4 PCBs with ≥1 inch² 2 oz copper for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP16N65M2, STD16N65M2 saves >35% PCB area and improves thermal coupling via DPAK drain tab; versus IPP65R380C7, it delivers lower EMI and simpler gate drive at the cost of 0.02 Ω higher RDS(on), making it preferable for compact, high-reliability industrial SMPS.

Availability

STD16N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server power supplies, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STD16N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

STD16N65M2 belongs to ST's MDmesh™ M2 high-voltage power MOSFET family, engineered specifically for high-efficiency, high-density switched-mode power supplies operating up to 100 kHz with demanding reliability requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD16N65M2 supports 6.9 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS10675 Rev 2. This derating reflects thermal limits of the DPAK package and must be validated against actual PCB layout and heatsinking in the target application.

Does this MOSFET require external gate protection?

No-STD16N65M2 integrates a bidirectional Zener diode between gate and source, rated for ±25 V clamping. This eliminates the need for external gate protection components in most industrial applications, provided layout avoids excessive gate loop inductance.

How does its body diode performance compare to standard 650 V MOSFETs?

STD16N65M2 achieves trr = 342 ns and Qrr = 3.5 µC at 25 °C-up to 40% faster and 30% lower charge than typical 650 V planar MOSFETs. This is enabled by optimized epitaxial layer doping and lifetime control, directly reducing reverse recovery loss in PFC and LLC topologies.

Can it replace IGBTs in motor drive inverters?

Yes-its 11 A continuous current, 650 V blocking, and 360 mΩ RDS(on) at 100 °C enable direct IGBT replacement in 7.5 kW industrial inverter legs. Unlike IGBTs, it eliminates tail current loss and simplifies gate drive, though layout must minimize source inductance to preserve switching speed.