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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD18N60M6

Name: STD18N60M6
Brand: STMicroelectronics
SKU: STD18N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD18N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD18N60M6.pdf

Description:: MOSFET N-CH 600V 13A DPAK

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Product details

Overview

STD18N60M6 from STMicroelectronics is an N-channel 600 V, 230 mΩ typ. (280 mΩ max.), 13 A MDmesh M6 superjunction power MOSFET in DPAK (TO-252) package, optimized for high-efficiency switching in LLC and boost PFC converters with 100% avalanche-tested ruggedness and Zener-protected gate.

For engineers reviewing the STD18N60M6 datasheet, STD18N60M6 pinout, STD18N60M6 application, or STD18N60M6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, 100 V/ns MOSFET dv/dt ruggedness, 210 mJ single-pulse avalanche energy, and gate charge profile (Q_g = 16.8 nC) for hard-switching EMI control.

Technical Context

This MOSFET employs ST's MDmesh M6 technology, delivering improved R_DS(on)/area over prior generations while maintaining low gate input resistance (4.6 Ω) and fast switching (t_d(off) = 28 ns, t_f = 9 ns). Its 15 V/ns diode recovery dv/dt rating supports robust body diode commutation in resonant topologies.

The device features a Zener-protected gate structure and is 100% tested for unclamped inductive switching (UIS) up to 2.7 A repetitive avalanche current. Thermal resistance R_thJC = 1.14 °C/W enables high-power density designs when mounted on standard PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with 20% margin for transients.
R_DS(on) max	280 mΩ at T_C = 25 °C, V_GS = 10 V - Enables <1.2 W conduction loss at 13 A, critical for PFC efficiency.
Q_g	16.8 nC - Low total gate charge reduces driver power demand and improves switching speed control.
E_AS	210 mJ - Confirmed single-pulse avalanche energy supports reliable operation during inductive fault events.
dv/dt ruggedness	100 V/ns - Ensures immunity to false turn-on during high-slew-rate voltage transients in bridge configurations.
t_r/t_f	7 ns / 9 ns - Fast edge rates minimize switching transition losses in high-frequency LLC operation.
R_thJC	1.14 °C/W - Allows 110 W dissipation at T_C = 25 °C; thermal design must maintain case temperature ≤100 °C for 8.2 A continuous rating.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended layout compatible with automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; low 4.6 Ω intrinsic resistance minimizes gate drive loop inductance sensitivity.
2 (TAB/D)	Drain (exposed tab)	Main high-side power path; tab soldered to PCB copper pour for thermal conduction and low-inductance return path.
3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side switch or ground return in half-bridge.

Key Features

Feature	Design Value
MDmesh M6 silicon technology	230 mΩ typ. R_DS(on) at 600 V - Delivers 15% lower on-resistance per die area versus MDmesh M5, reducing conduction loss without increasing footprint.
100% UIS tested	2.7 A repetitive avalanche current - Guarantees robustness against inductive switching faults in PFC and resonant converters.
Zener-protected gate	±25 V V_GS rating - Prevents gate oxide damage during ESD events or gate driver overshoot, eliminating need for external clamping.
Low Q_gd/Q_gs ratio	8.4 nC / 4.5 nC = 1.87 - Reduces Miller effect, enabling stable hard-switching at >100 kHz with minimal gate oscillation risk.
Optimized body diode	t_rr = 208 ns, Q_rr = 1.9 µC at T_J = 25 °C - Minimizes reverse recovery loss and EMI in LLC synchronous rectification and boost diode replacement.

Applications

LLC Resonant Converter Primary Switch

Boost PFC Stage Switch

Use Scenario: High-efficiency server PSU primary-side switch operating at 200–500 kHz with zero-voltage switching (ZVS).

IC Role / Device Role / Timing Role: High-side switching element in half-bridge configuration; handles full AC line rectified voltage (up to 400 VDC) with soft-switching transitions.

Use Value: 280 mΩ R_DS(on) and 16.8 nC Q_g reduce both conduction and switching losses, enabling >96% efficiency at 1 kW output.

Use Scenario: Continuous conduction mode (CCM) boost PFC in industrial motor drives and telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching transistor controlling inductor current to shape input current waveform and regulate DC bus voltage.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during high-di/dt boost transitions; 210 mJ E_AS ensures reliability under overload.

Industrial AC-DC Adapter

Solar Microinverter DC-DC Stage

Use Scenario: Compact 300 W AC-DC adapter for factory automation controllers requiring wide input range (85–265 VAC) and high reliability.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback or active clamp forward topology; operates with variable frequency modulation.

Use Value: Zener-protected gate withstands repeated hot-plug and surge events; 1.14 °C/W R_thJC allows derating to 8.2 A at 100 °C case temperature.

Use Scenario: DC-DC stage in string-level solar microinverters converting PV panel output (30–60 V) to 400 V DC link.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost or two-switch forward converter handling partial shading transients.

Use Value: 600 V V_DS rating provides margin above 480 V DC link; low C_oss (45 pF) and C_rss (2 pF) minimize capacitive turn-off loss at high switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60M6	Same MDmesh M6 die in TO-220 package; R_DS(on) identical (230 mΩ typ.), but R_thJC = 0.95 °C/W and no exposed tab for SMT thermal management.	Requires through-hole mounting and heatsink; unsuitable for space-constrained SMT designs where DPAK footprint is mandatory.	Select when board-level thermal mass or mechanical mounting constraints favor through-hole construction.
IPP60R190C7	Infineon CoolMOS C7: 190 mΩ typ. R_DS(on), higher Q_g (24 nC), no Zener gate protection, 650 V rating.	Offers lower conduction loss but requires external gate clamping and exhibits higher switching loss due to greater Q_g.	Prefer only if system-level gate drive strength and thermal budget allow higher Q_g-induced losses and external protection circuitry.

Compared with STP18N60M6, STD18N60M6 delivers superior thermal performance in SMT layouts via direct tab soldering, while IPP60R190C7 trades gate robustness and ease of drive for marginal R_DS(on) improvement-making STD18N60M6 optimal for cost-sensitive, high-reliability PFC and LLC designs.

Availability

STD18N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial AC-DC adapters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for STD18N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies-including server PSUs, telecom rectifiers, and renewable energy inverters-where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD18N60M6 supports 8.2 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12843 Rev 3. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding junction temperature limits.

Does this MOSFET require external gate protection?

No. The STD18N60M6 integrates Zener protection between gate and source, rated for ±25 V V_GS. This eliminates the need for external gate clamping diodes in typical applications, simplifying layout and improving reliability against ESD and gate driver overshoot.

How does its body diode performance compare to standard SJ MOSFETs?

With t_rr = 208 ns and Q_rr = 1.9 µC at 25 °C, the STD18N60M6's body diode offers faster recovery and lower stored charge than earlier MDmesh generations. This reduces reverse recovery loss and associated EMI in hard-commutated topologies like boost PFC and LLC secondary-side synchronous rectification.

Can it be used in a synchronous rectifier configuration?

No-this is an N-channel high-side switch intended for primary-side switching. Its body diode is not optimized for synchronous rectification duty; dedicated low-V_F, low-Q_rr Schottky or logic-level MOSFETs are required for secondary-side SR applications.

STD18N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD18N60M6 FAQ

1.How can I place an order for STD18N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD18N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD18N60M6 reliable?

The price and inventory of STD18N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD18N60M6 is usually 5 days.

3.What payment methods are accepted for STD18N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD18N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD18N60M6?

STD18N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD18N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD18N60M6?

For technical support, including STD18N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD18N60M6 requirements.

6.How does Aetrix verify that STD18N60M6 is sourced from the original manufacturer or authorized distributors?

All STD18N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD18N60M6 meets industry standards.

7.What is the process for return or replacement of STD18N60M6?

All STD18N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STD18N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD18N60M6 part is unused and in its original packaging.

Return procedure for STD18N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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