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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD18NF25

Name: STD18NF25
Brand: STMicroelectronics
SKU: STD18NF25
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD18NF25

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD18NF25.pdf

Description:: MOSFET N-CH 250V 17A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD18NF25 from STMicroelectronics is an AEC-Q101 qualified N-channel Power MOSFET in DPAK (TO-252) package, rated for 250 V V_DS, 165 mΩ R_DS(on) max at V_GS = 10 V and 8.5 A, with 17 A continuous drain current at T_C = 25 °C. It delivers exceptional dv/dt capability (10 V/ns), 100% avalanche tested performance (E_AS = 170 mJ), and low gate charge (Q_g = 29.3 nC), enabling use as primary switch in high-efficiency isolated DC-DC converters for telecom infrastructure.

For engineers reviewing the STD18NF25 datasheet, STD18NF25 pinout, STD18NF25 application, or STD18NF25 equivalent, key selection criteria include its AEC-Q101 qualification, 250 V breakdown voltage, 140–165 mΩ on-resistance range, 29.3 nC total gate charge, and DPAK thermal resistance (R_thJC = 1.36 °C/W), critical for automotive and industrial power switching reliability.

Technical Context

This STripFET II device uses a planar trench-gate structure optimized to minimize C_iss (1000 pF typ.) and Crss (28 pF typ.), reducing switching losses and improving EMI behavior in hard-switched topologies. Its 10 V/ns dv/dt rating enables robust operation under fast transient conditions without spurious turn-on.

The integrated body diode exhibits trr = 147 ns (T_J = 25 °C) and Q_rr = 0.8 µC at I_SD = 17 A, supporting synchronous rectification and flyback snubberless designs. Thermal design is anchored by R_thJC = 1.36 °C/W, allowing 110 W dissipation at T_C = 25 °C with proper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Withstands up to 250 V drain-source blocking voltage, suitable for 200 V bus applications with margin.
R_DS(on) max	165 mΩ at V_GS = 10 V, I_D = 8.5 A - Enables low conduction loss in 12–17 A switching paths.
I_D continuous	17 A at T_C = 25 °C - Supports high-current primary-side switching in telecom DC-DC converters.
Q_g	29.3 nC - Reduces gate drive power and enables efficient operation with low-power controllers.
E_AS	170 mJ - Confirmed single-pulse avalanche energy ensures ruggedness during unclamped inductive switching.
dv/dt	10 V/ns - Prevents false triggering in noisy high-dv/dt environments such as motor drives and SMPS.
R_thJC	1.36 °C/W - Enables direct case-to-heatsink thermal path for high-power density PCB layouts.

Pinout & Package

STD18NF25 is housed in a surface-mount DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package features three terminals: Gate (G), Source (S), and Drain (D), where the large metal tab is electrically connected to the Drain.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 10 V logic-level drive; low Q_g minimizes driver stress and switching delay.
S (Pin 3)	Source reference node	Common return path for load current; ties to ground or low-side switch node in half-bridge.
D (Tab)	Drain output / high-current path	Exposed copper tab conducts full drain current and dissipates heat directly to PCB copper or heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, HTRB).
100% avalanche tested	Each unit undergoes unclamped inductive switching test to guarantee E_AS ≥ 170 mJ at production.
Low C_iss and Crss	1000 pF input capacitance and 28 pF reverse transfer capacitance reduce Miller effect and improve switching speed.
Exceptional dv/dt immunity	Rated 10 V/ns with ISD ≤ 17 A, di/dt ≤ 200 A/µs - prevents parasitic turn-on in high-noise converter layouts.
STripFET II process	Optimized trench-gate geometry lowers R_DS(on) × Q_g figure-of-merit for improved efficiency in 100–500 kHz SMPS.

Applications

Telecom DC-DC Converters

Automotive Body Control Modules

Use Scenario: Primary-side switch in 48 V–250 V input isolated forward or flyback converters powering base station RF modules.

IC Role / Device Role / Timing Role: High-voltage, medium-current power switch operating at 200–300 kHz with tight duty-cycle control.

Use Value: 165 mΩ R_DS(on) and 29.3 nC Q_g enable >94% efficiency at 15 A output while maintaining thermal stability on 2 oz copper.

Use Scenario: Load switch for HVAC actuators, seat motors, and LED matrix drivers in 12 V/24 V vehicle systems.

IC Role / Device Role / Timing Role: Robust N-channel high-side or low-side switch controlled via microcontroller GPIO with external level shift if needed.

Use Value: AEC-Q101 qualification and 170 mJ avalanche rating ensure reliable operation during load dump and inductive kick events.

Industrial Motor Drives

Server PSU Hold-Up Circuits

Use Scenario: Half-bridge leg in 24–48 V BLDC gate driver stages for fans, pumps, and compressors.

IC Role / Device Role / Timing Role: Fast-switching power stage component handling repetitive 68 A pulsed currents (I_DM) with minimal dead-time loss.

Use Value: 10 V/ns dv/dt rating and low trr (147 ns) body diode suppress shoot-through risk and reduce snubber complexity.

Use Scenario: OR-ing FET in redundant 12 V server power supply outputs to prevent backfeed and enable hot-swap.

IC Role / Device Role / Timing Role: Low-loss bidirectional conduction path with fast turn-off to isolate failed supplies within microseconds.

Use Value: 140 mΩ typical R_DS(on) minimizes voltage drop across FET, preserving hold-up time while limiting power loss to <1.5 W at 10 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF25	TO-220 through-hole package; identical electrical specs but higher R_thJA (62 °C/W vs. 50 °C/W) and no AEC-Q101 qualification.	Preferred for prototyping or non-automotive bench testing where heatsink mounting is simpler than SMT thermal pads.	Select when mechanical mounting flexibility outweighs AEC-Q101 compliance and board space constraints.
IRF640N	200 V V_DS, 180 mΩ R_DS(on), 18 A ID, no avalanche rating or automotive qualification; higher Q_g (71 nC).	Suitable only for non-critical 12–48 V industrial controls where voltage margin and ruggedness are secondary.	Avoid in 250 V systems or automotive contexts; use only if cost sensitivity overrides reliability and efficiency targets.

Compared with STP18NF25 and IRF640N, STD18NF25 uniquely combines AEC-Q101 qualification, 250 V rating, 29.3 nC gate charge, and 1.36 °C/W junction-to-case thermal resistance-making it the sole choice for space-constrained, thermally demanding automotive and telecom power stages.

Availability

STD18NF25 is available at Aetrix Electronics and suitable for telecom DC-DC converters, automotive body control modules, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for STD18NF25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STD18NF25 belongs to ST's STripFET II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive-grade and telecom-grade power conversion systems.

FAQ

Is STD18NF25 suitable for high-frequency switching above 500 kHz?

No-its 29.3 nC gate charge and 1000 pF input capacitance result in increased switching losses beyond 300 kHz. For >500 kHz operation, ST recommends the STD20NF25L (Logic-level variant) or STW20NK50Z (SuperMESH) with lower Q_g/C_iss trade-offs.

What is the maximum safe operating area (SOA) limit at T_C = 100 °C?

At T_C = 100 °C, the continuous drain current is derated to 12 A (per Table 1), and the SOA curve (Figure 1) shows pulse-limited operation up to 68 A for 10 µs. Exceeding these limits risks thermal runaway or avalanche failure.

Can STD18NF25 be used in high-side configuration without a gate driver?

No-its 2–4 V gate threshold requires 10 V drive for full enhancement, and source-referenced gate control is impractical in high-side topology. A dedicated bootstrap or isolated gate driver (e.g., STGAP2SIC) is mandatory for reliable high-side switching.

Does the DPAK package require solder paste stencil optimization for thermal pad reflow?

Yes-the exposed drain tab demands a 70–80% copper-filled thermal pad with 4–6 vias (0.3 mm diameter, spaced ≤1 mm) to achieve R_thJC ≤ 1.5 °C/W. ST's AN4915 recommends 120 µm stencil thickness and Type 4 solder paste for void-free attachment.

STD18NF25 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 165mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD18NF25 FAQ

1.How can I place an order for STD18NF25 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD18NF25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD18NF25 reliable?

The price and inventory of STD18NF25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD18NF25 is usually 5 days.

3.What payment methods are accepted for STD18NF25?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD18NF25 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD18NF25?

STD18NF25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD18NF25 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD18NF25?

For technical support, including STD18NF25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD18NF25 requirements.

6.How does Aetrix verify that STD18NF25 is sourced from the original manufacturer or authorized distributors?

All STD18NF25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD18NF25 meets industry standards.

7.What is the process for return or replacement of STD18NF25?

All STD18NF25 units undergo pre-shipment inspection (PSI). If there is an issue with STD18NF25, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD18NF25 part is unused and in its original packaging.

Return procedure for STD18NF25:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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