Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD19NF20

Name: STD19NF20
Brand: STMicroelectronics
SKU: STD19NF20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STD19NF20

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD19NF20.pdf

Description:: MOSFET N-CHANNEL 200V 15A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STD19NF20 from STMicroelectronics is an N-channel 200 V, 0.11 Ω (typ), 15 A Power MOSFET in DPAK (TO-252) package, fabricated using MESH OVERLAY™ process. It delivers high dv/dt capability (15 V/ns), low gate charge (24 nC), and robust avalanche energy rating (110 mJ), enabling use in hard-switched SMPS primary-side switching stages.

For engineers reviewing the STD19NF20 datasheet, STD19NF20 pinout, STD19NF20 application, or STD19NF20 equivalent, key selection criteria include its R_DS(on) at 10 V gate drive, SOA-limited pulsed current (60 A), thermal resistance junction-to-PCB (50 °C/W), and integrated body diode recovery performance (t_rr = 125 ns at T_j = 25 °C).

Technical Context

This MOSFET employs ST's strip-based MESH OVERLAY™ layout to achieve lower R_DS(on) and reduced intrinsic capacitance versus conventional planar structures. Its gate threshold voltage (2–4 V) supports standard 10 V logic-level drive while maintaining noise immunity.

The device integrates a fast-recovery body diode with Q_rr = 0.55 µC and I_RRM = 8.8 A under defined inductive switching conditions. Its safe operating area is validated up to 100 V V_DD, 7.5 A ID, and 4.7 Ω gate resistance per Figure 15 of DS4935.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum drain-source blocking voltage for primary-side switch in 100–120 VAC offline converters.
R_DS(on) max	0.16 Ω - Confirmed worst-case on-resistance at T_C = 25 °C, V_GS = 10 V, ID = 7.5 A; defines conduction loss at full load.
I_D continuous	15 A - Continuous drain current limited by package thermal capability at T_C = 25 °C.
Q_g	24 nC - Total gate charge determines driver power requirement and switching speed in hard-switched topologies.
t_r/t_f	22 ns / 11 ns - Rise/fall times measured at V_DD = 100 V, I_D = 7.5 A, R_G = 4.7 Ω; critical for EMI control.
E_AS	110 mJ - Single-pulse avalanche energy rating ensures ruggedness during transient overvoltage events without external snubbers.
R_thj-pcb	50 °C/W - Junction-to-PCB thermal resistance on 1-inch² FR-4, 2 oz Cu; used to estimate die temperature rise under PCB-mounted operation.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for thermal and electrical connection. Standard 3-pin surface-mount outline with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤ ±20 V gate-source voltage; 24 nC total charge dictates driver strength.
2 (D, TAB)	Drain / Exposed Pad	Main high-side current path and primary thermal interface; must be soldered to large copper pour for thermal management.
3 (S)	Source	Reference node for gate drive and current sensing; connects to power ground in low-side configurations or source of high-side switch.

Key Features

Feature	Design Value
Extremely high dv/dt capability	15 V/ns - Enables reliable operation in fast-switching circuits without spurious turn-on due to Miller coupling.
Minimized gate charge	24 nC - Reduces gate driver losses and enables higher frequency operation up to 200 kHz in SMPS designs.
Low intrinsic capacitance	C_iss = 800 pF, C_oss = 165 pF - Low stored energy improves efficiency and reduces ringing in resonant and quasi-resonant converters.
MESH OVERLAY™ process	Delivers 0.11 Ω typ R_DS(on) in DPAK - Achieves performance parity with larger TO-220 devices while reducing board space and thermal mass.
Robust avalanche rating	110 mJ single-pulse - Eliminates need for external clamping in flyback and forward converter primary switches subjected to leakage inductance spikes.

Applications

AC-DC SMPS Primary Switch

Flyback Converter Main Switch

Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from input to transformer secondary.

Use Value: 0.11 Ω R_DS(on) minimizes conduction loss at 15 A peak current; 125 ns t_rr limits diode reverse recovery loss during ZVS transitions.

Use Scenario: Isolated auxiliary supply in industrial PLC power module.

IC Role / Device Role / Timing Role: High-voltage switching element in discontinuous conduction mode (DCM) flyback topology.

Use Value: 200 V V_DS provides 50% margin over 120 VAC peak (170 V); 110 mJ E_AS withstands reflected output overvoltage transients.

DC-DC Boost Pre-regulator

Motor Drive Half-Bridge Leg

Use Scenario: 48 V input boost stage stepping up to 400 V DC bus for PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in non-isolated boost converter with synchronous rectification.

Use Value: 15 A continuous rating supports 1.5 kW output; low C_oss (165 pF) reduces turn-off loss during high dV/dt commutation.

Use Scenario: Low-voltage BLDC motor driver for HVAC fan (24–48 V bus).

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge driving inductive motor phase winding.

Use Value: Fast t_f (11 ns) and low Q_gd (11.6 nC) enable clean dead-time control; body diode t_rr < 150 ns prevents shoot-through during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP19NF20	Same silicon die, TO-220 package; R_thj-case = 1.39 °C/W vs. 50 °C/W (junction-to-PCB) for STD19NF20.	Requires heatsink mounting; unsuitable for dense SMT layouts but offers superior thermal performance in through-hole designs.	Select when mechanical mounting constraints allow heatsink attachment and higher continuous power dissipation is required.
IRF640NPbF	200 V, 0.18 Ω R_DS(on), 18 A, TO-220; higher R_DS(on) and Q_g = 39 nC; no specified E_AS rating.	Lacks guaranteed avalanche ruggedness; less suitable for unclamped inductive switching or poorly snubbed topologies.	Acceptable only in cost-sensitive, low-stress linear or soft-switched applications where 0.16 Ω R_DS(on) margin is sufficient.

Compared with STP19NF20, STD19NF20 trades thermal performance for SMT manufacturability and board space savings; compared with IRF640NPbF, it delivers lower conduction loss, faster switching, and verified avalanche capability essential for reliability-critical power conversion.

Availability

STD19NF20 is available at Aetrix Electronics and suitable for AC-DC SMPS, flyback converters, DC-DC boost pre-regulators, and motor drive half-bridge legs requiring stable component supply across industrial, medical, and consumer electronics production programs.

Supply support for STD19NF20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD19NF20 belongs to ST's MESH OVERLAY™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum gate-source voltage rating for STD19NF20?

The absolute maximum V_GS is ±20 V, as specified in Table 1 of DS4935 Rev 7. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 0 V to ensure reliable turn-off; gate resistors should limit peak current during switching transitions.

Does STD19NF20 have a fully rated avalanche capability?

Yes - STD19NF20 is characterized for single-pulse avalanche energy (E_AS) of 110 mJ at T_j = 25 °C, with I_AR = 15 A and V_DD = 50 V. This rating is production-tested and guarantees ruggedness against inductive switching transients without external protection components.

Can STD19NF20 be used in synchronous rectification applications?

No - STD19NF20 is optimized as a controlled switch, not a synchronous rectifier. Its body diode has t_rr = 125 ns and V_SD = 1.6 V at 15 A, which is too slow and lossy for efficient SR operation. Dedicated low-V_F, fast-recovery MOSFETs such as STP16NF20L are recommended instead.

What is the thermal resistance from junction to ambient for STD19NF20 in standard layout?

R_thj-amb is not specified for DPAK in DS4935 Rev 7. Only R_thj-pcb = 50 °C/W (on 1-inch² FR-4, 2 oz Cu) and R_thj-case is omitted for DPAK. Ambient thermal performance depends entirely on PCB copper area, layer count, and airflow; simulation or measurement is required for system-level thermal design.

STD19NF20 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD19NF20 FAQ

1.How can I place an order for STD19NF20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD19NF20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD19NF20 reliable?

The price and inventory of STD19NF20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD19NF20 is usually 5 days.

3.What payment methods are accepted for STD19NF20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD19NF20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD19NF20?

STD19NF20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD19NF20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD19NF20?

For technical support, including STD19NF20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD19NF20 requirements.

6.How does Aetrix verify that STD19NF20 is sourced from the original manufacturer or authorized distributors?

All STD19NF20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD19NF20 meets industry standards.

7.What is the process for return or replacement of STD19NF20?

All STD19NF20 units undergo pre-shipment inspection (PSI). If there is an issue with STD19NF20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD19NF20 part is unused and in its original packaging.

Return procedure for STD19NF20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…