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STMicroelectronics STD1HN60K3
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- Part No.:
- STD1HN60K3
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD1HN60K3.pdf
- Description:
- MOSFET N-CH 600V 1.2A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,500
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Product details
Overview
STD1HN60K3 from STMicroelectronics is an N-channel 600 V, 6.7 Ω typ. RDS(on), 1.2 A SuperMESH3™ Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in offline SMPS and auxiliary power supplies. It features 100% avalanche tested ruggedness, 5 V/ns dv/dt capability, and integrated gate Zener protection at ±30 V.
For engineers reviewing the STD1HN60K3 datasheet, STD1HN60K3 pinout, STD1HN60K3 application, or STD1HN60K3 equivalent, key selection criteria include its 600 V VDS, low 9.5 nC total gate charge, 180 ns diode reverse recovery time, and thermal resistance of 4.63 °C/W (junction-to-case), critical for compact flyback and PFC stage designs.
Technical Context
This MOSFET employs ST's SuperMESH3™ vertical structure with minimized intrinsic capacitance (Ciss = 140 pF typ., Coss = 13 pF typ.) and enhanced diode softness (Qrr = 500 nC typ. at TJ = 25 °C). Its gate threshold voltage (VGS(th) = 2–4.5 V) ensures reliable turn-on with standard 10 V gate drivers.
The device integrates back-to-back Zener diodes between gate and source (V(BR)GSO = 30 V), eliminating external gate protection components. Its safe operating area supports 1.2 A continuous drain current at TC = 25 °C and 4.8 A pulsed current, with single-pulse avalanche energy rated at 60 mJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full mains rectified voltage in universal-input AC/DC converters without derating. |
| RDS(on) max | 8 Ω @ VGS = 10 V, ID = 0.6 A - Enables low conduction loss in low-current auxiliary rails and standby supplies. |
| Qg | 9.5 nC - Reduces gate drive power and enables efficient operation with low-power controllers like VIPer series. |
| dv/dt capability | 5 V/ns - Resists false triggering in noisy high-dv/dt environments such as discontinuous-mode flybacks. |
| TJ range | −55 to +150 °C - Supports operation in sealed industrial enclosures with limited airflow and ambient up to 85 °C. |
| EAS | 60 mJ - Absorbs unclamped inductive energy during startup/fault without external snubbers in low-power PFC stages. |
| trr / Qrr | 180 ns / 500 nC - Minimizes switching loss and EMI in quasi-resonant topologies using body diode commutation. |
Pinout & Package
STD1HN60K3 is housed in a surface-mount DPAK (TO-252) package with exposed drain tab for thermal enhancement. The package meets ECOPACK® environmental compliance standards and is supplied in tape-and-reel (2500 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab) | Drain | High-voltage output node; electrically connected to exposed copper pad-must be thermally and electrically tied to PCB ground plane or heatsink. |
| G (Pin 1) | Gate | Control input; requires low-impedance drive due to 10 Ω gate resistance and 9.5 nC total charge. |
| S (Pin 3) | Source | Reference node for gate drive and current sensing; connects to primary-side ground in isolated converters. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness against transient overvoltage events without screening failure-critical for cost-sensitive consumer power adapters. |
| Zener-protected gate | Integrated ±30 V gate-source Zener eliminates need for external TVS, reducing BOM count and layout area in space-constrained designs. |
| Low Coss (13 pF typ.) | Reduces capacitive turn-off loss and improves light-load efficiency in high-frequency quasi-resonant converters (>100 kHz). |
| Improved diode recovery | Soft reverse recovery (IRRM = 5.6 A, trr = 180 ns) lowers EMI generation and stress on snubber components in flyback snubberless designs. |
| SuperMESH3™ structure | Delivers 20% lower RDS(on) vs prior SuperMESH™ generation while maintaining same die size-enables higher power density in legacy footprints. |
Applications
| AC/DC Auxiliary Power Supply | Flyback Converter (≤15 W) |
|---|---|
Use Scenario: Standby power generation for smart TVs, set-top boxes, and IoT gateways using universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Primary-side high-voltage switch regulating 5 V/12 V auxiliary rail via self-oscillating or controller-driven flyback. Use Value: Low 6.7 Ω RDS(on) and 27 W power dissipation enable >75% efficiency at 100 mW load without heatsink. | Use Scenario: Isolated DC/DC conversion in industrial sensors and PLC I/O modules requiring reinforced insulation and low leakage. IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM) flyback delivering 12 [email protected] A with <100 kHz switching. Use Value: 5 V/ns dv/dt immunity prevents spurious turn-on during transformer reset, eliminating need for gate clamping networks. |
| PFC Pre-regulator (Active) | LED Driver (Offline) |
Use Scenario: Boost-type active PFC stage in LED drivers and small appliances targeting >0.95 PF and <15% THD. IC Role / Device Role / Timing Role: Switching element in critical conduction mode (CrCM) boost converter operating at variable frequency up to 200 kHz. Use Value: Low Qgd/Qgs ratio (6.5 nC / 1.5 nC) ensures fast, predictable zero-current switching transitions and stable CrCM control. | Use Scenario: Constant-voltage LED driver for downlights and streetlight modules with integrated surge protection. IC Role / Device Role / Timing Role: High-side switch in buck-derived offline topology handling 600 V transients per IEC 61000-4-5 Level 4. Use Value: 60 mJ single-pulse avalanche rating absorbs 2 kV/1.2/50 µs surges without failure, enabling direct mains connection without external MOVs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60Z | Same VDS (600 V), but higher RDS(on) (11 Ω max), no integrated Zener, TO-220 package | Requires external gate protection; unsuitable for ultra-compact SMT layouts | Select only when through-hole mounting and lower gate charge sensitivity are acceptable. |
| FQP1N60CTF | 600 V, RDS(on) = 11.5 Ω max, 12.5 nC Qg, DPAK but no avalanche rating or Zener | Lacks 100% avalanche test and gate protection-requires additional design margin and external TVS | Use only in non-safety-critical, cost-driven applications where qualification testing is not required. |
Compared with STP1NK60Z and FQP1N60CTF, STD1HN60K3 delivers superior system-level reliability via integrated Zener protection, guaranteed avalanche ruggedness, and 25% lower gate charge-reducing driver losses and enabling smaller gate resistors in high-density designs.
Availability
STD1HN60K3 is available at Aetrix Electronics and suitable for AC/DC auxiliary power supplies, flyback converters ≤15 W, and active PFC pre-regulators requiring stable component supply and long-term industrial availability.
Supply support for STD1HN60K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, analog ICs, and MEMS sensors for industrial, automotive, and consumer markets.
STD1HN60K3 belongs to ST's SuperMESH3™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications where ruggedness, low gate charge, and integrated protection are mandatory.
FAQ
What is the maximum continuous drain current for STD1HN60K3 at 100 °C case temperature?
The maximum continuous drain current is 0.76 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world PCB cooling conditions and must be used for thermal design-not the 1.2 A rating at 25 °C.
Does STD1HN60K3 require an external gate resistor for EMI suppression?
No external gate resistor is strictly required for basic functionality, but a 10–47 Ω series resistor is recommended to dampen ringing caused by parasitic inductance in high-dv/dt layouts. The device's 10 Ω internal gate resistance provides partial damping, but board-level optimization remains necessary.
Can STD1HN60K3 replace STU1HN60K3 in the same PCB footprint?
No-STD1HN60K3 uses DPAK (TO-252) while STU1HN60K3 uses IPAK (TO-251); their pin-to-pin spacing and tab dimensions differ. The DPAK has a 4.4 mm e1 pitch and 5.2 mm b4 width, whereas IPAK has 4.6 mm e1 and 5.4 mm b4, making direct substitution mechanically incompatible without PCB revision.
Is the body diode suitable for synchronous rectification in this MOSFET?
No-the body diode is optimized for robustness and soft recovery in flyback snubberless operation, not low forward voltage. Its VSD is 1.6 V at 1.2 A, significantly higher than dedicated SR MOSFETs (<0.5 V). Use only for freewheeling or clamp functions-not synchronous rectification.
STD1HN60K3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH3™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.5 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD1HN60K3 FAQ
1.How can I place an order for STD1HN60K3 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD1HN60K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD1HN60K3 reliable?
The price and inventory of STD1HN60K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD1HN60K3 is usually 5 days.
3.What payment methods are accepted for STD1HN60K3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD1HN60K3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD1HN60K3?
STD1HN60K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD1HN60K3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD1HN60K3?
For technical support, including STD1HN60K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD1HN60K3 requirements.
6.How does Aetrix verify that STD1HN60K3 is sourced from the original manufacturer or authorized distributors?
All STD1HN60K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD1HN60K3 meets industry standards.
7.What is the process for return or replacement of STD1HN60K3?
All STD1HN60K3 units undergo pre-shipment inspection (PSI). If there is an issue with STD1HN60K3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD1HN60K3 part is unused and in its original packaging.
Return procedure for STD1HN60K3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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