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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD1HNC60T4

Name: STD1HNC60T4
Brand: STMicroelectronics
SKU: STD1HNC60T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD1HNC60T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD1HNC60T4.pdf

Description:: MOSFET N-CH 600V 2A DPAK

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Product details

Overview

STD1HNC60T4 from STMicroelectronics is an N-channel 600 V, 4 Ω (typ), 2 A (continuous at TC = 25°C) PowerMesh™II MOSFET in IPAK/DPAK package, designed for high-voltage switching in SMPS, welding inverters, and UPS systems with rugged unclamped inductive switching capability.

For engineers reviewing the STD1HNC60T4 datasheet, STD1HNC60T4 pinout, STD1HNC60T4 application, or STD1HNC60T4 equivalent, key selection criteria include its 600 V V_DSS, 4 Ω R_DS(on), 100% avalanche tested operation, 3.5 V/ns dv/dt rating, and gate charge of 11.3 nC - all critical for reliable high-speed, high-voltage power conversion design.

Technical Context

This MOSFET employs ST's second-generation PowerMesh™II layout, delivering improved R_DS(on) × area figure of merit while maintaining fast switching (t_r = 8.5 ns, t_f = 9 ns) and low gate charge (Q_g = 11.3 nC). Its optimized cell structure enables stable operation under high dv/dt stress up to 3.5 V/ns.

The device integrates a robust intrinsic body diode with t_rr = 480 ns and Q_rr = 1032 nC at T_j = 150°C, supporting hard-switched inductive loads. It is rated for repetitive avalanche energy E_AS = 120 mJ and operates up to T_j = 150°C with R_thj-case = 2.5 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports primary-side switching in offline 400 V DC bus and universal AC input SMPS
R_DS(on) (typ)	4 Ω at V_GS = 10 V, I_D = 1 A - determines conduction loss in continuous 2 A load applications
I_D (cont)	2 A at T_C = 25°C - defines maximum steady-state current with heatsink at ambient-referenced case temp
Q_g	11.3 nC - directly impacts gate driver power and switching transition time in 100–500 kHz designs
E_AS	120 mJ - enables reliable unclamped inductive switching without external snubbers in motor drive stages
dv/dt Rating	3.5 V/ns - ensures noise immunity and latch-up immunity in high-di/dt environments like welder inverters
t_r/t_f	8.5 ns / 9 ns - supports high-frequency operation with minimal overlap loss in hard-switched topologies

Pinout & Package

STD1HNC60T4 is housed in the IPAK (TO-251) package - a surface-mount variant of the DPAK footprint with isolated leadframe and thermal pad on the drain side. The package provides R_thj-case = 2.5 °C/W and supports reflow soldering up to 275 °C lead temperature.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path and gate reference node	Connected to PCB ground plane; carries full load current and sets local V_GS reference
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; driven by 10 V logic-level signal for full enhancement
3 (Drain)	Main high-voltage power output terminal	Internally connected to thermal pad; must be routed with clearance ≥2.5 mm for 600 V working voltage

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 120 mJ and repetitive I_AR = 2 A capability without derating
Minimized gate charge (Q_g = 11.3 nC)	Reduces gate driver losses and enables use of low-power drivers in space-constrained SMPS designs
Extremely high dv/dt capability (3.5 V/ns)	Prevents false turn-on during fast transient coupling in multi-MOSFET half-bridge configurations
PowerMesh™II cell architecture	Improves R_DS(on) × area trade-off vs first-gen MESH OVERLAY™, enabling smaller die size at same R_DS(on)
Integrated source-drain diode	Provides 2 A continuous freewheeling path with V_SD = 1.6 V and t_rr = 480 ns at 150°C junction temp

Applications

SMPS Primary Switch

Welding Inverter Stage

Use Scenario: High-efficiency 60–150 kHz flyback or forward converter operating from rectified 85–265 VAC input.

IC Role / Device Role / Timing Role: Main high-side switching element handling 600 V blocking and 2 A peak primary current.

Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating eliminates need for clamping circuits during overload.

Use Scenario: DC-link switching stage in IGBT-gated arc-welding inverters requiring fast, rugged 600 V switching.

IC Role / Device Role / Timing Role: Hard-switched inverter leg switch with high di/dt tolerance and repeatable avalanche performance.

Use Value: 3.5 V/ns dv/dt rating prevents spurious turn-on; 120 mJ E_AS sustains repeated short-circuit events during arc striking.

UPS Inverter Output

Industrial Motor Driver Half-Bridge

Use Scenario: 1 kVA online UPS inverter stage converting 360–400 V DC bus to 230 VAC output.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology managing 2 A RMS load current at 5–10 kHz PWM frequency.

Use Value: Low Q_g reduces gate drive power; integrated diode enables synchronous rectification in bidirectional modes.

Use Scenario: 200–500 W BLDC or stepper motor driver with discrete half-bridge configuration.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling phase current in trapezoidal commutation.

Use Value: Rugged body diode handles back-EMF recirculation; 150°C max T_j supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	R_DS(on) = 6.5 Ω (typ), lower gate charge (Q_g = 6.5 nC), no avalanche rating	Suitable only for low-power (<15 W) SMPS where avalanche stress is absent	Select when cost sensitivity outweighs ruggedness requirements and load currents remain ≤1 A
FQP1N60C	R_DS(on) = 5.5 Ω (typ), higher Q_g = 14 nC, avalanche-tested to 80 mJ only	Limited to non-critical industrial supplies with controlled fault conditions	Choose if TO-220 mounting is required and thermal margin allows higher R_DS(on)

Compared with STP1NK60Z and FQP1N60C, STD1HNC60T4 delivers superior avalanche robustness (120 mJ), tighter R_DS(on) tolerance (4 Ω vs ≥5.5 Ω), and higher dv/dt immunity - making it the preferred choice for mission-critical welding, UPS, and industrial SMPS where reliability under transient stress is mandatory.

Availability

STD1HNC60T4 is available at Aetrix Electronics and suitable for SMPS primary switching, welding inverter stages, UPS inverters, and industrial motor drivers requiring stable component supply across extended production lifecycles.

Supply support for STD1HNC60T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STD1HNC60T4 belongs to ST's PowerMESH™II high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline power supplies and industrial inverters operating up to 600 V.

FAQ

Is STD1HNC60T4 pin-compatible with standard TO-251 (IPAK) footprints?

Yes. STD1HNC60T4 uses the standardized TO-251 (IPAK) outline with 3-pin single-ended configuration: Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain. Mechanical dimensions match JEDEC MS-012AB, enabling drop-in replacement in existing IPAK layouts without PCB redesign.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 1.3 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures.

Does STD1HNC60T4 require a negative gate voltage for safe turn-off?

No. STD1HNC60T4 is a standard-enhancement-mode N-channel MOSFET with ±30 V gate-source rating. Turn-off is achieved by pulling the gate to 0 V (or slightly negative, ≤ –5 V) - no active negative bias circuitry is required for reliable operation.

Can STD1HNC60T4 replace STD1NK60T4 in existing designs?

Yes, with verification. STD1HNC60T4 offers lower R_DS(on) (4 Ω vs 5.5 Ω), identical 600 V rating, and enhanced avalanche capability (120 mJ vs 85 mJ). Thermal and gate drive design margins should be rechecked due to higher peak current capability and faster switching.

STD1HNC60T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 228 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD1HNC60T4 FAQ

1.How can I place an order for STD1HNC60T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD1HNC60T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD1HNC60T4 reliable?

The price and inventory of STD1HNC60T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD1HNC60T4 is usually 5 days.

3.What payment methods are accepted for STD1HNC60T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD1HNC60T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD1HNC60T4?

STD1HNC60T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD1HNC60T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD1HNC60T4?

For technical support, including STD1HNC60T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD1HNC60T4 requirements.

6.How does Aetrix verify that STD1HNC60T4 is sourced from the original manufacturer or authorized distributors?

All STD1HNC60T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD1HNC60T4 meets industry standards.

7.What is the process for return or replacement of STD1HNC60T4?

All STD1HNC60T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD1HNC60T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD1HNC60T4 part is unused and in its original packaging.

Return procedure for STD1HNC60T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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