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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD1NK80Z-1

Name: STD1NK80Z-1
Brand: STMicroelectronics
SKU: STD1NK80Z-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD1NK80Z-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD1NK80Z-1.pdf

Description:: MOSFET N-CH 800V 1A IPAK

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Product details

Overview

STD1NK80Z-1 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in DPAK (TO-252) package, rated for 800 V drain-source voltage, 16 Ω max R_DS(on) at V_GS = 10 V and I_D = 0.5 A, 1 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for robustness in high-voltage switching applications such as AC-DC adapters and LED drivers.

For engineers reviewing the STD1NK80Z-1 datasheet, STD1NK80Z-1 pinout, STD1NK80Z-1 application, or STD1NK80Z-1 equivalent, key selection criteria include its 4.5 V/ns dv/dt capability, 7.7 nC total gate charge, 160 pF input capacitance, Zener-protected gate, and DPAK thermal resistance of 2.78 °C/W junction-to-case - all critical for EMI-sensitive, high-reliability flyback and resonant converter designs.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - delivering reduced on-resistance while maintaining high dv/dt immunity (4.5 V/ns) and low intrinsic capacitance (C_iss = 160 pF, C_oss = 26 pF). Its Zener-protected gate structure enables ±30 V V_GS rating and 1 kV HBM ESD tolerance without external clamping.

The integrated body diode exhibits 1.6 V forward voltage at 1 A and 365 ns reverse recovery time (T_J = 25 °C), with Q_rr = 802 nC - optimized for snubberless operation in discontinuous conduction mode (DCM) flyback topologies where diode recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input (85–265 V_AC) offline SMPS up to 40 W without derating.
R_DS(on) max	16 Ω - defines conduction loss at 0.5 A; typ. 13 Ω enables <100 mW I²R loss in low-power adapters.
I_D cont.	1 A @ T_C = 25 °C - usable in compact heatsink-free designs when ambient ≤ 50 °C and PCB copper area ≥ 1 inch².
Q_g	7.7 nC - enables fast turn-on with low gate drive power; compatible with standard PWM controllers (e.g., VIPer, L6565).
E_AS	50 mJ - single-pulse avalanche energy allows safe operation during output short-circuit or startup overvoltage events.
dv/dt	4.5 V/ns - prevents spurious turn-on in high-noise environments like industrial lighting ballasts and motor drives.
R_thJC	2.78 °C/W - enables 45 W power dissipation with minimal case-to-heatsink thermal interface resistance.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; molded plastic body with gull-wing leads; JEDEC-standard footprint per Figure 20 (DS4318 Rev 4, p.10).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; Zener-clamped to ±30 V for ESD robustness.
2 (D, Tab)	Drain (exposed tab)	Main high-voltage switch node; electrically and thermally connected to PCB copper pour for heat sinking.
3 (S)	Source	Power return path; referenced to control ground; used for current sensing in low-side configurations.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness to 50 mJ, eliminating need for external snubbers in cost-sensitive DCM flyback designs.
Zener-protected gate	Integrates bidirectional Zener clamp between G and S, enabling ±30 V V_GS rating and 1 kV HBM ESD immunity without external components.
Minimized gate charge	7.7 nC total Q_g reduces driver power loss and enables higher switching frequencies (>100 kHz) with standard gate drivers.
Low intrinsic capacitance	C_iss = 160 pF and C_oss = 26 pF minimize capacitive switching losses and improve efficiency in high-frequency SMPS.
High dv/dt capability	4.5 V/ns rating ensures noise immunity in high-di/dt environments, preventing false triggering in industrial power supplies.

Applications

AC-DC Adapters

LED Drivers

Use Scenario: Universal-input (85–265 V_AC) 12–24 W flyback converter powering consumer electronics.

IC Role / Device Role: Primary-side high-voltage switch handling 800 V blocking and 1 A peak current.

Use Value: Zener protection and 100% avalanche testing eliminate external gate clamps and snubbers, reducing BOM count by 2–3 components.

Use Scenario: Isolated constant-current LED driver for street lighting with surge immunity requirements.

IC Role / Device Role: Primary-side switching element in quasi-resonant topology operating at 65–100 kHz.

Use Value: 4.5 V/ns dv/dt capability prevents false turn-on during lightning-induced line transients, improving system reliability.

Industrial Power Supplies

Appliance Control Boards

Use Scenario: 36 W auxiliary supply in PLC I/O modules requiring long-term stability under 60 °C ambient.

IC Role / Device Role: Main switching transistor in DCM flyback with integrated transformer feedback.

Use Value: R_thJC = 2.78 °C/W enables direct mounting to chassis copper, eliminating discrete heatsink and saving 12 mm² board space.

Use Scenario: Mains-powered smart home hub with built-in AC-DC conversion and isolated communication interfaces.

IC Role / Device Role: High-side switch controlling 24 V DC bus for relay and solenoid loads.

Use Value: 1 A continuous rating and 5 A pulsed capability support inrush current of electromechanical loads without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK80Z	TO-220 package; identical electrical specs but higher R_thJA (62 °C/W vs 50 °C/W) and no exposed tab for PCB thermal coupling.	Suitable for through-hole prototyping or low-volume assemblies where manual soldering is preferred.	Select when mechanical robustness and hand-soldering compatibility outweigh thermal performance needs.
FQP1N80	800 V, 13 Ω R_DS(on), but no Zener gate protection; lower ESD rating (500 V HBM); C_iss = 190 pF.	Acceptable in cost-driven, low-noise environments with external gate clamping and controlled layout.	Choose only if gate protection is implemented externally and dv/dt stress is below 2.5 V/ns.

Compared with STP1NK80Z and FQP1N80, STD1NK80Z-1 delivers superior thermal coupling via DPAK tab, guaranteed Zener gate protection, and higher dv/dt immunity - making it the optimal choice for automated SMT production of compact, high-reliability offline converters.

Availability

STD1NK80Z-1 is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial auxiliary power supplies requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.

Supply support for STD1NK80Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STD1NK80Z-1 belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-voltage, low-power offline switching applications where avalanche ruggedness, gate protection, and thermal efficiency are critical design constraints.

FAQ

Is STD1NK80Z-1 pin-compatible with STD1NK80ZT4?

Yes - STD1NK80Z-1 and STD1NK80ZT4 share identical DPAK (TO-252) mechanical outline, pin assignment (G-D-S), and electrical specifications. The suffix "-1" denotes tape-and-reel packaging per standard ST ordering convention; "T4" indicates same tape-and-reel format per DS4318 Rev 4. Both are functionally and physically interchangeable.

Can STD1NK80Z-1 replace STP1NK80Z in existing TO-220 designs?

No - STD1NK80Z-1 uses DPAK (TO-252) surface-mount packaging with different footprint, thermal path, and lead pitch than TO-220. Direct replacement requires PCB redesign to accommodate gull-wing leads and thermal pad layout. Electrical equivalence does not imply mechanical compatibility.

What is the maximum recommended gate resistor value for driving STD1NK80Z-1?

For reliable switching with minimal overshoot, ST recommends R_G ≤ 4.7 Ω (as validated in Figure 13 test circuit). Higher values increase switching time and losses; values >10 Ω risk incomplete turn-on at high temperatures due to gate threshold drift. Gate driver peak current must exceed 2.5 A for 10 V step transitions.

Does STD1NK80Z-1 require external gate protection in a 230 V_AC application?

No - the integrated Zener diode clamps gate-source voltage to ±30 V, covering worst-case transients in EN 61000-4-5 Level 3 surge tests (2 kV line-earth). External gate resistors (≥10 Ω) and local 100 nF ceramic decoupling are sufficient; no TVS or discrete Zener required.

STD1NK80Z-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 7.7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STD1NK80Z-1 FAQ

1.How can I place an order for STD1NK80Z-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD1NK80Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD1NK80Z-1 reliable?

The price and inventory of STD1NK80Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD1NK80Z-1 is usually 5 days.

3.What payment methods are accepted for STD1NK80Z-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD1NK80Z-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD1NK80Z-1?

STD1NK80Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD1NK80Z-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD1NK80Z-1?

For technical support, including STD1NK80Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD1NK80Z-1 requirements.

6.How does Aetrix verify that STD1NK80Z-1 is sourced from the original manufacturer or authorized distributors?

All STD1NK80Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD1NK80Z-1 meets industry standards.

7.What is the process for return or replacement of STD1NK80Z-1?

All STD1NK80Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD1NK80Z-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD1NK80Z-1 part is unused and in its original packaging.

Return procedure for STD1NK80Z-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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