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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD20N20T4

Name: STD20N20T4
Brand: STMicroelectronics
SKU: STD20N20T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD20N20T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD20N20T4.pdf

Description:: MOSFET N-CH 200V 18A DPAK

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Product details

Overview

STD20N20T4 from STMicroelectronics is an N-channel enhancement-mode power MOSFET designed for high-efficiency primary-side switching in isolated DC-DC converters. It features 200 V V_DSS, typ. 0.10 Ω R_DS(on) at V_GS = 10 V, 18 A continuous drain current (I_D), low gate charge (Q_g = 35 nC), and 100% avalanche tested ruggedness.

For engineers reviewing the STD20N20T4 datasheet, STD20N20T4 pinout, STD20N20T4 application, or STD20N20T4 equivalent, key selection factors include its DPAK package thermal performance, dv/dt immunity in hard-switched topologies, R_DS(on) stability over temperature, and suitability as a replacement for TO-220 variants where board space and thermal interface constraints apply.

Technical Context

This MOSFET employs ST's proprietary STripFET™ II process to minimize input capacitance (C_iss = 950 pF) and total gate charge (Q_g = 35 nC), enabling fast switching with reduced driver loss. Its 200 V breakdown voltage supports operation across universal-input offline SMPS and industrial 200–250 V DC bus systems.

The device is rated for 18 A continuous drain current at T_c = 25 °C and exhibits exceptional unclamped inductive switching (UIS) capability-100% tested to 100 mJ-ensuring robustness against transient overvoltage during turn-off in flyback and forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Supports full-wave rectified 115/230 VAC inputs and 200 V DC bus systems without derating.
R_DS(on) max	0.125 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 18 A, critical for >90% efficiency targets.
I_D (continuous)	18 A @ T_c = 25 °C - Sustains high peak currents in PWM-driven flyback primary switches.
Q_g	35 nC - Reduces gate drive power and enables use of low-cost, low-current drivers (e.g., 1-A peak).
E_AS	100 mJ - Confirmed avalanche energy rating ensures reliable operation under inductive load switching stress.
C_iss	950 pF @ V_DS = 25 V - Low input capacitance minimizes Miller effect and improves switching speed control.

Pinout & Package

STD20N20T4 is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for enhanced thermal dissipation. The package measures 6.2 mm × 6.6 mm × 1.7 mm (L × W × H) and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 (GATE)	Control electrode	Receives PWM signal; low Q_g allows fast edge rates with minimal overshoot.
2 (DRAIN)	High-side power output	Connected to transformer primary; electrically tied to exposed copper pad for thermal + electrical path.
3 (SOURCE)	Reference node / return path	Common connection point for gate driver return and current-sense resistor; defines local ground reference.

Key Features

Feature	Design Value
STripFET™ II process technology	Reduces R_DS(on) × area by 30% vs. first-gen STripFET, enabling smaller die size without sacrificing conduction loss.
100% avalanche tested	Guarantees minimum 100 mJ single-pulse UIS capability-no statistical screening or batch sampling.
Exceptional dv/dt immunity	Rated >4.5 V/ns - prevents spurious turn-on in high-noise, high-dV/dt environments like LLC resonant converters.
Low gate-to-drain charge (Q_gd)	12 nC - Minimizes Miller plateau duration, improving controllability during hard switching transitions.

Applications

High-Efficiency Flyback Converter

Industrial 200 V DC-DC Supply

Use Scenario: Primary-side switch in 65–100 kHz flyback converter powering PoE-powered devices.

IC Role / Device Role: High-voltage, high-current switching element handling full input voltage swing and transformer magnetizing current.

Use Value: Low R_DS(on) and Q_g directly reduce conduction and switching losses, enabling >92% efficiency at full load.

Use Scenario: Step-down regulator feeding PLC I/O modules from 200 V DC industrial bus.

IC Role / Device Role: Main power switch in non-isolated buck-derived topology with active clamp.

Use Value: Avalanche rating ensures survival during bus transients; DPAK footprint simplifies heatsinking on dense PCBs.

Universal Input AC-DC Adapter

LED Driver Primary Switch

Use Scenario: Compact 36 W adapter accepting 90–264 VAC input with quasi-resonant control.

IC Role / Device Role: Primary switch operating in QR mode with variable frequency and zero-voltage switching.

Use Value: Low C_iss and high dv/dt immunity maintain ZVS boundary across wide input range and line conditions.

Use Scenario: Constant-current LED driver for street lighting using flyback with digital dimming.

IC Role / Device Role: Primary-side switch modulated at 20–50 kHz to regulate output current via primary sensing.

Use Value: Tight R_DS(on) tolerance (±20%) ensures consistent current regulation across production units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20N20	Same die, TO-220 package; higher R_θJC (1.5 °C/W vs. 1.0 °C/W), no tape-and-reel option.	Preferred for prototyping or low-volume through-hole assembly; less suitable for automated SMT lines.	Select when manual soldering or heatsink mounting dominates; avoid if board space or reflow compatibility is constrained.
IRF640NPbF	200 V, 18 A, but R_DS(on) = 0.18 Ω and Q_g = 67 nC - significantly higher conduction and switching loss.	Acceptable only in low-frequency (<50 kHz), low-efficiency designs where cost is primary constraint.	Choose only if legacy design reuse mandates identical pinout; not recommended for new high-efficiency designs.

Compared with STP20N20 and IRF640NPbF, STD20N20T4 delivers superior thermal resistance, lower gate drive demand, and guaranteed avalanche ruggedness-making it the optimal choice for volume-manufactured, space-constrained, high-reliability DC-DC converters.

Availability

STD20N20T4 is available at Aetrix Electronics and suitable for high-efficiency flyback converters, industrial 200 V DC-DC supplies, universal-input AC-DC adapters, and LED driver primary switches requiring stable component supply and long-term manufacturability.

Supply support for STD20N20T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

STD20N20T4 belongs to ST's STripFET™ II power MOSFET product line, engineered specifically for high-frequency, high-efficiency primary-side switching in isolated SMPS topologies.

FAQ

What is the maximum junction temperature for STD20N20T4?

The absolute maximum junction temperature (T_J) is 175 °C. Derating begins at T_c > 25 °C per the datasheet's thermal resistance curve (R_θJC = 1.0 °C/W). At 100 °C case temperature, usable I_D drops to ~12 A to maintain T_J ≤ 175 °C.

Is STD20N20T4 RoHS compliant and lead-free?

Yes. STD20N20T4 is manufactured in accordance with RoHS Directive 2011/65/EU and is lead-free. The "T4" suffix denotes tape-and-reel packaging with Pb-free terminations and halogen-free molding compound, verified per STMicroelectronics' material declarations.

Can STD20N20T4 be used in synchronous rectification?

No. STD20N20T4 is an N-channel enhancement-mode MOSFET optimized for high-side switching, not low-side synchronous rectification. It lacks the ultra-low R_DS(on) (<0.02 Ω), low-threshold V_GS(th), and optimized body diode recovery required for SR operation.

What is the recommended PCB layout for thermal performance?

Maximize copper area under the exposed drain pad (Pin 2) using ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting to an internal or bottom-layer ground/power plane. Maintain ≥0.5 mm clearance between gate trace and high-dV/dt nodes to prevent coupling-induced false turn-on.

STD20N20T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 940 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD20N20T4 FAQ

1.How can I place an order for STD20N20T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD20N20T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD20N20T4 reliable?

The price and inventory of STD20N20T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD20N20T4 is usually 5 days.

3.What payment methods are accepted for STD20N20T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD20N20T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD20N20T4?

STD20N20T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD20N20T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD20N20T4?

For technical support, including STD20N20T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD20N20T4 requirements.

6.How does Aetrix verify that STD20N20T4 is sourced from the original manufacturer or authorized distributors?

All STD20N20T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD20N20T4 meets industry standards.

7.What is the process for return or replacement of STD20N20T4?

All STD20N20T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD20N20T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD20N20T4 part is unused and in its original packaging.

Return procedure for STD20N20T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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