STMicroelectronics STD20NF10T4
- Part No.:
- STD20NF10T4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD20NF10T4.pdf
- Description:
- MOSFET N CH 100V 25A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:1,995
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STD20NF10T4 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in DPAK package, rated for 100 V VDS, 0.038 Ω RDS(on) at VGS = 10 V, 25 A continuous drain current (TC = 25°C), and optimized for high-frequency isolated DC-DC converters in telecom and computing power supplies.
For engineers reviewing the STD20NF10T4 datasheet, STD20NF10T4 pinout, STD20NF10T4 application, or STD20NF10T4 equivalent, key selection criteria include gate charge (40 nC), dv/dt ruggedness (20 V/ns), SOA robustness, low RDS(on), and DPAK thermal performance (Rthj-case = 1.76 °C/W).
Technical Context
This device uses ST's STripFET™ II process to minimize input capacitance (Ciss = 1200 pF) and total gate charge (Qg = 40 nC), enabling fast switching with reduced driver loss. Its low threshold voltage (VGS(th) = 2–4 V) supports direct logic-level drive in low-voltage gate circuits.
The integrated body diode features trr = 110 ns and Qrr = 390 µC under hard-switched inductive conditions (ISD = 30 A, di/dt = 100 A/µs), supporting synchronous rectification and freewheeling in flyback and forward topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in 48 V telecom and 12 V/24 V industrial DC-DC inputs with margin against transients |
| RDS(on) | 0.038 Ω (typ.) at VGS = 10 V - enables <1 W conduction loss at 15 A, critical for >90% efficiency designs |
| Qg | 40 nC - reduces gate drive power and allows use of low-current drivers (e.g., UC384x family) |
| dv/dt rating | 20 V/ns - ensures reliable operation during fast voltage transitions without spurious turn-on |
| Rthj-case | 1.76 °C/W - permits 85 W dissipation at ΔT = 150°C, supporting compact heatsink integration in DPAK footprint |
| trr | 110 ns - limits reverse recovery loss in hard-switched topologies, reducing EMI and stress on snubbers |
Pinout & Package
DPAK (TO-252) package: surface-mount, single-gauge leadframe, exposed drain pad for thermal and electrical connection. Dimensions per ST mechanical drawing 0068772-F; ECOPACK® compliant, lead-free second-level interconnect.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or low-side switch node; carries full load current |
| Pin 2 (Gate) | Control input | High-impedance MOS gate; requires <40 nC charge for full enhancement; sensitive to ESD |
| Pin 3 (Drain) | Power output | Exposed metal pad (Pin 3) - electrically and thermally connected to drain; must be soldered to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Reduces Ciss by ~30% vs. standard planar MOSFETs, lowering switching loss at 300–500 kHz |
| Low gate charge (Qg) | 40 nC enables <1 W gate drive loss with 10 Ω series resistor at 500 kHz, simplifying driver design |
| High dv/dt immunity | 20 V/ns rating prevents false triggering during fast bus transients in telecom rectifiers |
| Robust avalanche capability | EAS = 300 mJ (single pulse) supports unclamped inductive switching in PFC and LLC resonant stages |
Applications
| Telecom AC-DC Front-End | Server VRM High-Side Switch |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 100–300 W isolated forward converter powering base station control boards. IC Role / Device Role / Timing Role: Main power switch operating at 200–300 kHz; handles 25 A peak currents with minimal conduction loss. Use Value: 0.038 Ω RDS(on) cuts conduction loss by 40% vs. comparable 0.065 Ω devices, improving thermal margin in sealed enclosures. | Use Scenario: High-side synchronous rectifier in multiphase 12 V → 1.2 V VRM for Xeon-class CPUs. IC Role / Device Role / Timing Role: Fast-turning high-side FET driven by dedicated gate controller; operates with 100 ns dead-time constraints. Use Value: 40 nC Qg and 110 ns trr reduce switching loss and cross-conduction risk, enabling stable 1 MHz operation. |
| Industrial PLC Power Supply | Automotive DC-DC Converter (12 V → 5 V) |
Use Scenario: Main switch in 24 V input, 60 W flyback supply for programmable logic controller I/O modules. IC Role / Device Role / Timing Role: Isolated primary switch handling 100 A pulsed current during startup surges. Use Value: 100 A IDM rating and 300 mJ EAS withstand repeated overload events without failure. | Use Scenario: Low-voltage buck converter in automotive infotainment head unit, powered from vehicle battery. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; conducts up to 30 A with VGS = 0 bias during freewheeling. Use Value: 1.3 V VSD at 20 A reduces diode conduction loss by 25% vs. Schottky alternatives, improving light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 0.044 Ω (higher), Qg = 71 nC (78% higher), no specified dv/dt rating | Limited to ≤150 kHz switching; less suitable for telecom SMPS requiring tight EMI control | Prefer when cost sensitivity outweighs efficiency and frequency targets |
| STP20NF10 | Same die, TO-220 package; Rthj-case = 1.25 °C/W (lower), but larger footprint and through-hole mounting | Better thermal performance but incompatible with DPAK-reflow assembly; unsuitable for space-constrained PCBs | Choose only if board layout allows TO-220 and thermal budget exceeds 100 W |
Compared with IRF540NPBF and STP20NF10, STD20NF10T4 delivers optimal balance of low Qg, high dv/dt immunity, and DPAK manufacturability-making it preferred for high-density, high-frequency telecom and server power stages where gate drive loss and layout area are critical.
Availability
STD20NF10T4 is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, server VRMs, and industrial PLC power supplies requiring stable component supply and long-term production continuity.
Supply support for STD20NF10T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and communications markets.
STD20NF10T4 belongs to ST's STripFET™ II power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space- and thermally-constrained telecom and computing infrastructure.
FAQ
What is the maximum continuous drain current for STD20NF10T4 at 100°C case temperature?
The maximum continuous drain current is 21 A at TC = 100°C, derated from 25 A at 25°C using the specified 0.57 W/°C derating factor and Rthj-case = 1.76 °C/W. This reflects real thermal limits under sustained conduction, not transient capability.
Can STD20NF10T4 be driven directly by a 3.3 V microcontroller GPIO?
No - its gate threshold voltage range is 2–4 V, but full enhancement (RDS(on) ≤ 0.045 Ω) requires VGS ≥ 10 V. A 3.3 V signal yields high RDS(on) (>1 Ω) and excessive heating; a level-shifting gate driver (e.g., TC4427) is mandatory.
Does STD20NF10T4 have built-in ESD protection on the gate?
No - the datasheet specifies |IGSS| ≤ ±100 nA at ±20 V, confirming absence of integrated gate protection diodes. External 10 kΩ gate resistor and 12 V Zener clamp to source are required per ST application note AN419.
Is the DPAK package of STD20NF10T4 compatible with automated optical inspection (AOI) after reflow?
Yes - the DPAK outline (JEDEC TO-252) has defined fiducials and coplanarity ≤ 0.1 mm per ST mechanical spec. AOI systems calibrated for IPC-7351B DPAK footprints reliably detect solder joint voiding, lift, and misalignment on the exposed drain pad.
STD20NF10T4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 85W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD20NF10T4 FAQ
1.How can I place an order for STD20NF10T4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD20NF10T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD20NF10T4 reliable?
The price and inventory of STD20NF10T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD20NF10T4 is usually 5 days.
3.What payment methods are accepted for STD20NF10T4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD20NF10T4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD20NF10T4?
STD20NF10T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD20NF10T4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD20NF10T4?
For technical support, including STD20NF10T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD20NF10T4 requirements.
6.How does Aetrix verify that STD20NF10T4 is sourced from the original manufacturer or authorized distributors?
All STD20NF10T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD20NF10T4 meets industry standards.
7.What is the process for return or replacement of STD20NF10T4?
All STD20NF10T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD20NF10T4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD20NF10T4 part is unused and in its original packaging.
Return procedure for STD20NF10T4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STD20NF10T4 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

;;2.jpg)