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STMicroelectronics STD26NF10

Part No.:
STD26NF10
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD26NF10.pdf
Description:
MOSFET N-CH 100V 25A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,041

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Product details

Overview

STD26NF10 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in DPAK package, rated for 100 V drain-source voltage, 25 A continuous drain current at 25°C, and 0.033 Ω typical RDS(on) at VGS = 10 V. It features low gate charge (55 nC), exceptional dv/dt capability (13 V/ns), and 100% avalanche tested robustness-designed for high-efficiency switching in automotive power distribution systems.

For engineers reviewing the STD26NF10 datasheet, STD26NF10 pinout, STD26NF10 application, or STD26NF10 equivalent, key selection criteria include its 1.5 °C/W junction-to-case thermal resistance, 20 S forward transconductance at 12.5 A, and suitability for unclamped inductive load switching with 480 mJ single-pulse avalanche energy rating.

Technical Context

This MOSFET employs ST's STripFET™ II process to minimize input capacitance (Ciss = 1550 pF) and gate charge, enabling fast switching with reduced drive loss. Its rugged body diode supports reverse recovery times as low as 88 ns under 25 A/100 A/µs conditions.

The device is characterized for automotive-grade reliability: 100% avalanche tested, rated for Tj up to 175°C, and qualified per JEDEC JESD97 with ECOPACK® lead-free packaging. Safe operating area (SOA) is defined up to 100 A pulsed drain current with pulse-width-limited derating.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage before avalanche onset; enables use in 48 V automotive bus and industrial 100 V DC systems.
RDS(on) 0.033 Ω (typ) at VGS = 10 V - Low conduction loss yielding ≤ 10.3 W I²R dissipation at 18 A, critical for thermally constrained PCB layouts.
Qg 55 nC - Total gate charge determines driver strength requirement; enables efficient operation with low-power gate drivers (e.g., TC4427).
EAS 480 mJ - Single-pulse avalanche energy at Tj = 25°C - Supports reliable operation during inductive turn-off transients without external snubbers.
dv/dt 13 V/ns - Peak diode recovery dv/dt rating - Ensures immunity to false triggering during fast commutation in motor control and SMPS.
Rthj-case 1.5 °C/W - Junction-to-case thermal resistance - Enables direct heatsink mounting for >80 W continuous power dissipation with minimal thermal interface resistance.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB routing and thermal management.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Source terminal (low-side reference) Connected to ground or low-side return path; carries full load current and defines common reference for gate drive.
2 (Gate) Control electrode High-impedance input requiring <200 nA leakage; driven by logic-level or dedicated gate driver to switch channel on/off.
3 (Drain) Main power output / high-side connection Exposed metal pad (Pin 3) serves as primary drain connection and thermal path to heatsink or copper pour.

Key Features

Feature Design Value
STripFET™ II process technology Reduces Ciss and Qg vs. standard planar MOSFETs-enabling higher switching frequency without excessive gate drive loss.
100% avalanche tested Guarantees minimum EAS = 480 mJ-eliminates need for design margining against unclamped inductive energy in relay/motor drivers.
Low RDS(on) × Qg figure-of-merit 0.033 Ω × 55 nC = 1.815 Ω·nC-balances conduction and switching losses for optimal efficiency in 20–100 kHz PWM applications.
ECOPACK® lead-free packaging Complies with RoHS and JEDEC JESD97; marked on inner box label-ensures environmental compliance without solderability trade-offs.

Applications

Automotive Body Control Module (BCM) Industrial DC Motor Driver

Use Scenario: Driving 12 V/24 V solenoids, window lifters, and seat actuators in OEM BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 25 A with PWM dimming or soft-start sequencing.

Use Value: Avalanche ruggedness prevents failure during inductive kickback from 200 mH solenoid coils; low RDS(on) minimizes heat buildup in sealed enclosures.

Use Scenario: H-bridge half-bridge leg in 48 V brushed DC motor drives for factory automation.

IC Role / Device Role / Timing Role: Low-side switching element synchronized with complementary high-side FET; operates at 20 kHz PWM with <60 ns rise/fall times.

Use Value: 13 V/ns dv/dt rating ensures immunity to parasitic turn-on during cross-conduction; 1.5 °C/W Rthj-case allows direct heatsink mounting for 85 W peak power.

Telecom DC-DC Converter Primary Switch LED Streetlight Power Supply

Use Scenario: Primary-side switch in isolated flyback converters delivering 100–300 W for base station power supplies.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 100 V bus with 55 nC gate charge and 1550 pF input capacitance.

Use Value: Low Qg reduces driver IC power consumption; 100% avalanche test ensures reliability during output short-circuit events.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in constant-current LED drivers for outdoor lighting.

IC Role / Device Role / Timing Role: High-efficiency main switch in buck-boost topology operating at ambient temperatures up to 85°C.

Use Value: RDS(on) drift <15% over –40°C to 150°C enables stable current regulation; TO-252 footprint simplifies thermal via placement on aluminum-core PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF540N RDS(on) = 0.044 Ω (typ), Qg = 71 nC, no avalanche rating specified Lacks guaranteed avalanche energy; SOA not characterized for pulsed inductive loads Acceptable for non-critical linear or resistive switching where cost is prioritized over ruggedness.
STP26NF10 Same die, TO-220 package; identical RDS(on), Qg, and EAS; Rthj-case = 1.25 °C/W Through-hole mounting; better natural convection cooling but larger board footprint Select when mechanical robustness, manual assembly, or legacy TO-220 heatsink compatibility is required.

Compared with IRF540N, STD26NF10 delivers superior avalanche immunity and lower switching loss; versus STP26NF10, it trades slightly higher thermal resistance for compact surface-mount integration and automated assembly compatibility.

Availability

STD26NF10 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, and telecom power supply designs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STD26NF10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD26NF10 belongs to ST's STripFET™ II Power MOSFET product line-engineered specifically for high-reliability, high-efficiency switching in automotive and industrial power conversion where avalanche ruggedness and low gate charge are critical.

FAQ

Is STD26NF10 suitable for 48 V battery-powered motor control?

Yes. With 100 V VDS, 25 A continuous current, and 480 mJ avalanche energy, STD26NF10 safely handles 48 V bus voltages plus transient spikes up to 100 V. Its 0.033 Ω RDS(on) limits conduction loss to 20 W at 25 A, making it appropriate for brushed DC motor H-bridges in robotics and mobility applications.

What is the maximum gate-source voltage rating?

The absolute maximum VGS is ±20 V. Operation above ±15 V risks oxide damage; typical gate drive uses +10 V for full enhancement and 0 V or –5 V for guaranteed turn-off. Gate threshold voltage is 2–4 V, so logic-level 3.3 V or 5 V microcontrollers require a gate driver for reliable switching.

Does STD26NF10 have a built-in body diode?

Yes. It integrates a fast-recovery source-drain diode with 1.5 V forward voltage at 25 A and 88 ns reverse recovery time at 150°C. This diode supports freewheeling current in inductive loads and enables synchronous rectification in buck converters when used in low-side configuration.

Can STD26NF10 be mounted directly to a heatsink?

Yes. The DPAK package exposes the drain (Pin 3) as a large metal pad designed for direct thermal interface to a heatsink or copper pour. With Rthj-case = 1.5 °C/W, a 10°C/W heatsink yields ~16.5°C/W total thermal resistance-supporting ~60 W continuous dissipation at ΔT = 100°C, assuming proper thermal paste and mounting pressure.

STD26NF10 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
38mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1550 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD26NF10 FAQ

1.How can I place an order for STD26NF10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD26NF10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD26NF10 reliable?

The price and inventory of STD26NF10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD26NF10 is usually 5 days.

3.What payment methods are accepted for STD26NF10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD26NF10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD26NF10?

STD26NF10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD26NF10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD26NF10?

For technical support, including STD26NF10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD26NF10 requirements.

6.How does Aetrix verify that STD26NF10 is sourced from the original manufacturer or authorized distributors?

All STD26NF10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD26NF10 meets industry standards.

7.What is the process for return or replacement of STD26NF10?

All STD26NF10 units undergo pre-shipment inspection (PSI). If there is an issue with STD26NF10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD26NF10 part is unused and in its original packaging.

Return procedure for STD26NF10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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