STMicroelectronics STD2HNK60Z-1

Overview

STD2HNK60Z-1 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 600 V drain-source voltage, 4.8 Ω max R_DS(on) at V_GS = 10 V and I_D = 1 A, and 2 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, minimized gate charge (11–15 nC), and low intrinsic capacitance (C_iss = 280 pF), targeting high-reliability switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STD2HNK60Z-1 datasheet, STD2HNK60Z-1 pinout, STD2HNK60Z-1 application, or STD2HNK60Z-1 equivalent, key selection criteria include its 4.5 V/ns dv/dt capability, 120 mJ single-pulse avalanche energy, 2.77 °C/W junction-to-case thermal resistance, and IPAK (TO-251) package with integrated source-drain diode recovery performance (t_rr = 178 ns).

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining robust high-voltage ruggedness. Its Zener-protected gate ensures ±30 V V_GS tolerance and 2 kV HBM ESD rating, enabling reliable operation in noisy industrial environments.

The MOSFET delivers high dv/dt immunity (4.5 V/ns) under inductive switching conditions (I_SD ≤ 2 A, di/dt ≤ 200 A/μs), supported by a fast source-drain diode (Q_rr = 445 nC, t_rr = 178 ns) and low C_oss (38 pF) for reduced switching losses in hard-switched topologies.

Key Specifications

Pinout & Package

STD2HNK60Z-1 is housed in an IPAK (TO-251) type C package with exposed tab for thermal and electrical connection to drain. The 3-pin configuration uses standard leadframe layout optimized for PCB-level heat dissipation and high-voltage isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP2NK60ZFP and FQP2N60, STD2HNK60Z-1 offers superior thermal performance (2.77 vs. 3.5 °C/W), integrated gate protection, and higher avalanche energy - making it optimal for space-constrained, high-reliability offline power designs where PCB area and field failure rate are critical.

Availability

STD2HNK60Z-1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial offline SMPS, LED drivers, and appliance motor control systems requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STD2HNK60Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD2HNK60Z-1 belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V offline power conversion applications where avalanche ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD2HNK60Z-1 supports 1.26 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS3646 Rev 8. This derating reflects thermal limitations of the IPAK package and must be applied in thermally constrained layouts without active cooling.

Does this MOSFET include an integrated body diode, and what are its key recovery parameters?

Yes - it integrates a source-drain diode with forward voltage V_SD = 1.6 V at I_SD = 2 A and reverse recovery time t_rr = 178 ns (T_J = 25 °C). Q_rr is 445 nC, and I_RRM reaches 5 A, enabling use in synchronous rectification and freewheeling paths without external diodes.

Can STD2HNK60Z-1 be used in zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (38 pF) and C_rss (7 pF), combined with 11–15 nC Q_g, support efficient ZVS operation in LLC resonant converters. However, ZVS soft-switching must be verified with actual circuit parasitics and operating point, as the device itself does not regulate resonance.

Is the IPAK package RoHS-compliant and halogen-free?

Yes - STD2HNK60Z-1 is offered in ECOPACK®-compliant IPAK packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation is available via ST's quality portal and distributor certifications.