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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD2LN60K3

Name: STD2LN60K3
Brand: STMicroelectronics
SKU: STD2LN60K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD2LN60K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD2LN60K3.pdf

Description:: MOSFET N CH 600V 2A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD2LN60K3 from STMicroelectronics is an N-channel 600 V, 4 Ω typ. (at V_GS = 10 V, I_D = 1 A), 2 A SuperMESH3™ Power MOSFET in DPAK (TO-252) package, featuring 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and integrated gate-source Zener protection. It serves as a high-voltage switching device in offline SMPS, AC-DC adapters, and LED drivers where fast switching, low conduction loss, and robust ESD immunity are required.

For engineers reviewing the STD2LN60K3 datasheet, STD2LN60K3 pinout, STD2LN60K3 application, or STD2LN60K3 equivalent, key selection criteria include its 600 V V_DS, 4.5 Ω max R_DS(on), 45 W P_TOT at T_C = 25 °C, 2.78 °C/W R_thj-case, and Zener-protected gate-critical for reliable operation in flyback and PFC stages under transient stress.

Technical Context

This device employs ST's enhanced SuperMESH3™ vertical structure to achieve ultra-low on-resistance while maintaining high voltage blocking and superior dynamic performance. Its optimized cell layout delivers reduced intrinsic capacitance (C_iss = 235 pF typ., C_oss = 22 pF typ.) and improved diode reverse recovery (t_rr = 200 ns typ. at T_j = 25 °C).

The integrated back-to-back gate-source Zener diodes (BVGSO = 30 V) provide inherent overvoltage clamping without external components, and the 100% unclamped inductive avalanche rating (E_AS = 80 mJ at T_j = 25 °C) enables robust operation in hard-switched topologies with inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Enables direct use in universal-input (85–265 V_AC) offline converters without voltage derating concerns.
R_DS(on) max	4.5 Ω @ V_GS = 10 V, I_D = 1 A - Delivers low conduction loss in 2 A continuous switching applications at ambient-referenced heatsinking.
P_TOT	45 W @ T_C = 25 °C - Supports thermally constrained PCB-mount designs with DPAK footprint and 2.78 °C/W junction-to-case thermal resistance.
dv/dt capability	12 V/ns - Ensures noise-immune turn-off in high-speed, high-voltage switching circuits without spurious triggering.
E_AS	80 mJ (single-pulse, T_j = 25 °C) - Guarantees safe energy absorption during inductive load switching transients without failure.
t_rr	200 ns typ. @ I_SD = 2 A, di/dt = 100 A/µs - Reduces switching losses and EMI in synchronous rectification and freewheeling paths.
BVGSO	30 V - Built-in gate-source Zener clamps transient spikes, eliminating need for external TVS in gate drive networks.

Pinout & Package

STD2LN60K3 is housed in a surface-mount DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package features ECOPACK® environmental compliance and is supplied in tape-and-reel (2500 pcs/reel).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; protected by integrated 30 V Zener diode.
2 (D / TAB)	Drain / Heat Sink Pad	Main high-voltage output node; electrically and thermally connected to exposed copper tab for low-inductance, low-R_th mounting.
3 (S)	Source	Power return path and reference for gate drive; forms common node with driver IC ground in low-side configurations.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 80 mJ and repetitive avalanche reliability-no screening failures in production lots.
Extremely high dv/dt capability	12 V/ns rating prevents false turn-on during rapid voltage transients in bridge-leg or flyback transformer primary circuits.
Very low intrinsic capacitance	C_iss = 235 pF and C_oss = 22 pF minimize capacitive switching losses and improve efficiency above 100 kHz.
Zener-protected gate	Integrated 30 V bidirectional Zener eliminates external gate clamp components and reduces BOM count and layout area.
Improved diode reverse recovery	t_rr = 200 ns and Q_rr = 800 nC reduce switching node ringing and EMI generation in discontinuous conduction mode (DCM) operation.

Applications

AC-DC Adapters

Flyback SMPS Primary Switch

Use Scenario: Universal-input (85–265 V_AC) 12–24 W wall adapters for consumer electronics.

IC Role / Device Role / Timing Role: High-side main switch in quasi-resonant flyback topology operating up to 130 kHz.

Use Value: 600 V rating ensures margin against reflected voltage spikes; 4.5 Ω R_DS(on) minimizes conduction loss at 2 A peak current.

Use Scenario: Isolated DC-DC converter for industrial control power supplies (24 V out, 50 W).

IC Role / Device Role / Timing Role: Primary-side switching element in fixed-frequency flyback with active clamp snubber.

Use Value: 12 V/ns dv/dt tolerance suppresses false triggering during snubber ringback; Zener gate protection withstands gate drive coupling noise.

LED Driver Secondary Side

Offline PFC Pre-regulator

Use Scenario: Constant-current LED driver for street lighting using secondary-side synchronous rectification.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode in LLC resonant output stage.

Use Value: Fast t_rr = 200 ns and low Q_rr = 800 nC reduce body-diode conduction loss and improve light-output stability.

Use Scenario: Boost-type active PFC front-end for 100–200 W industrial power supplies.

IC Role / Device Role / Timing Role: Main boost switch operating in continuous conduction mode (CCM) at 65 kHz.

Use Value: Avalanche-rated construction handles inductor current overshoot during line surges; 45 W P_TOT supports thermal design with minimal heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60Z	600 V, 4.5 Ω max R_DS(on), TO-220 package, no integrated Zener, lower E_AS (50 mJ)	Requires external gate protection; less suitable for compact, high-noise environments	Preferred where through-hole mounting and cost sensitivity outweigh Zener integration needs.
FQP2N60	600 V, 5.5 Ω max R_DS(on), TO-220 package, no avalanche rating, no Zener	Lacks 100% avalanche test and gate protection; higher conduction loss at 2 A	Suitable only for non-critical, low-stress linear or low-frequency switching where reliability margins are relaxed.

Compared with STP2NK60Z and FQP2N60, STD2LN60K3 provides superior system-level robustness via integrated Zener clamping and guaranteed avalanche energy handling-enabling smaller gate drive circuits and eliminating field-failure modes linked to gate oxide rupture or inductive snapback.

Availability

STD2LN60K3 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, and LED drivers requiring stable component supply across extended production lifecycles.

Supply support for STD2LN60K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD2LN60K3 belongs to ST's SuperMESH3™ Power MOSFET product line-engineered specifically for high-efficiency, high-reliability offline switching applications demanding ruggedness, low R_DS(on), and minimized EMI.

FAQ

What is the maximum continuous drain current for STD2LN60K3 at 100 °C case temperature?

The maximum continuous drain current (I_D) for STD2LN60K3 is 1.26 A when the case temperature (T_C) is maintained at 100 °C. This value is limited by thermal dissipation in the DPAK package and reflects the derated current capacity under sustained high-temperature operation, not by silicon limits.

Does STD2LN60K3 require an external gate resistor for safe operation?

Yes-while the device integrates gate-source Zener protection, a series gate resistor (typically 4.7 Ω, as used in the datasheet switching characterization) is required to dampen ringing, control dV/dt during turn-on/off, and prevent oscillation due to gate loop inductance. Omitting it risks shoot-through or gate driver overstress.

Can STD2LN60K3 be used in place of STF2LN60K3 in a TO-220FP-based design?

No-STD2LN60K3 uses a DPAK (TO-252) surface-mount package with different thermal, mechanical, and soldering requirements than the through-hole TO-220FP package of STF2LN60K3. Direct substitution would require PCB redesign, thermal interface revalidation, and gate drive layout changes due to differing parasitic inductance.

What is the significance of the "SuperMESH3™" designation in this MOSFET?

SuperMESH3™ refers to ST's third-generation proprietary vertical power MOSFET structure that combines optimized trench geometry, enhanced charge balance, and refined epitaxial layer doping to simultaneously reduce R_DS(on), gate charge (Q_g = 12 nC), and output capacitance-delivering higher efficiency and faster switching than prior SuperMESH™ generations.

STD2LN60K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 235 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD2LN60K3 FAQ

1.How can I place an order for STD2LN60K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD2LN60K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD2LN60K3 reliable?

The price and inventory of STD2LN60K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD2LN60K3 is usually 5 days.

3.What payment methods are accepted for STD2LN60K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD2LN60K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD2LN60K3?

STD2LN60K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD2LN60K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD2LN60K3?

For technical support, including STD2LN60K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD2LN60K3 requirements.

6.How does Aetrix verify that STD2LN60K3 is sourced from the original manufacturer or authorized distributors?

All STD2LN60K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD2LN60K3 meets industry standards.

7.What is the process for return or replacement of STD2LN60K3?

All STD2LN60K3 units undergo pre-shipment inspection (PSI). If there is an issue with STD2LN60K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD2LN60K3 part is unused and in its original packaging.

Return procedure for STD2LN60K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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