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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD2N62K3

Name: STD2N62K3
Brand: STMicroelectronics
SKU: STD2N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD2N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD2N62K3.pdf

Description:: MOSFET N-CH 620V 2.2A DPAK

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Product details

Overview

STD2N62K3 from STMicroelectronics is an N-channel 620 V, 2.2 A MDmesh™ K3 Power MOSFET in DPAK (TO-252) package, featuring 3.6 Ω max R_DS(on), 12 V/ns dv/dt capability, and built-in Zener-protected gate, designed for high-efficiency AC-DC adapters and offline SMPS primary-side switching.

For engineers reviewing the STD2N62K3 datasheet, STD2N62K3 pinout, STD2N62K3 application, or STD2N62K3 equivalent, key selection criteria include avalanche energy rating (85 mJ), low output capacitance (26 pF), reverse recovery time (200 ns at T_j = 25 °C), and thermal resistance (2.78 °C/W junction-to-case).

Technical Context

This device employs ST's MDmesh™ K3 vertical superjunction architecture to achieve ultra-low on-resistance while maintaining high voltage blocking (620 V) and robust 100% avalanche testing. Its optimized cell layout delivers superior dynamic performance with C_iss = 340 pF and Q_g = 15 nC.

The integrated gate-source Zener diode (±30 V breakdown) provides ESD protection without external components, and the source-drain diode exhibits improved reverse recovery (Q_rr = 0.9 µC, t_rr = 200 ns) for reduced switching losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Enables use in universal-input (85–265 V_AC) offline converters without derating.
R_DS(on) max	3.6 Ω @ V_GS = 10 V, I_D = 1.1 A - Determines conduction loss in continuous conduction mode (CCM) operation.
I_D cont @ T_C = 25 °C	2.2 A - Defines maximum DC current handling under heatsink-cooled conditions.
E_AS	85 mJ - Specifies single-pulse unclamped inductive switching robustness for flyback/LLC primary side.
t_rr	200 ns @ I_SD = 2.2 A, di/dt = 100 A/µs - Directly impacts turn-off loss and EMI in hard-switched applications.
C_oss	26 pF @ V_DS = 50 V - Low output capacitance reduces capacitive turn-on loss and improves light-load efficiency.
dv/dt	12 V/ns - High intrinsic immunity enables reliable operation in noisy high-dV/dt environments (e.g., PFC stages).

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for thermal and electrical connection; surface-mount footprint compatible with IPC-7351 standard.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	High-voltage power node; electrically and thermally connected to PCB copper pour for heat dissipation.
G	Gate	Control input requiring <15 nC total charge; Zener-protected against ±30 V transients.
S	Source	Power return path and reference for gate drive; tied to primary ground in flyback converters.

Key Features

Feature	Design Value
MDmesh™ K3 superjunction structure	Enables 620 V rating with 2.9 Ω typ. R_DS(on), reducing conduction loss by >25% vs. prior K2 generation.
100% avalanche tested	Guarantees minimum 85 mJ single-pulse energy handling-critical for reliability in unclamped inductive switching.
Zener-protected gate	Integrated ±30 V gate-source clamp eliminates need for external TVS, simplifying layout and improving ESD robustness.
Low C_oss & Crss	26 pF C_oss and 4 pF Crss minimize Miller effect and enable faster, more predictable switching transitions.
Improved diode recovery	200 ns t_rr and 0.9 µC Q_rr reduce switching loss and ringing in discontinuous conduction mode (DCM) flyback.

Applications

AC-DC Adapters

LED Driver Primary Side

Use Scenario: 12–24 W universal-input offline flyback converter powering USB-C chargers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–100 kHz with self-supplied gate drive.

Use Value: 3.6 Ω R_DS(on) and 85 mJ E_AS ensure >88% efficiency at full load and withstand startup surges without failure.

Use Scenario: Isolated constant-current LED driver for commercial downlights (100–230 V_AC input).

IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant (QR) flyback topology with valley-switching control.

Use Value: 12 V/ns dv/dt capability prevents false triggering during high-slew-rate transformer reset transitions.

Industrial SMPS

Smart Home Power Supplies

Use Scenario: 36 W open-frame power supply for PLC I/O modules with wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) forward converter with synchronous rectification.

Use Value: R_th(j-case) = 2.78 °C/W enables direct mounting to metal chassis, eliminating need for additional heatsink.

Use Scenario: Compact 15 W wall-plug adapter for voice-controlled smart speakers with strict EMI limits.

IC Role / Device Role / Timing Role: Primary-side switch in DCM flyback with active clamp snubber.

Use Value: Low 26 pF C_oss and fast 200 ns t_rr reduce high-frequency ringing, easing EMI filter design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF2N62K3	Same die, TO-220FP package; higher R_th(j-case) = 6.25 °C/W; no exposed drain tab.	Better suited for through-hole prototyping or lower-power (<15 W) designs with forced-air cooling.	Select when mechanical mounting constraints favor through-hole or when lower volume production avoids SMT reflow.
STU2N62K3	Same die, IPAK (TO-251) package; identical R_th(j-case) = 2.78 °C/W but larger footprint than DPAK.	Preferred for high-reliability industrial boards where leaded packages improve solder joint inspection and thermal cycling endurance.	Choose for legacy board compatibility or where IPC-A-610 Class 3 inspection requires visible leads.

Compared with STF2N62K3 and STU2N62K3, STD2N62K3 offers optimal thermal performance per unit PCB area in surface-mount designs, enabling smaller heatsinks and higher power density in space-constrained adapters and IoT power supplies.

Availability

STD2N62K3 is available at Aetrix Electronics and suitable for AC-DC adapters, LED driver primary-side circuits, and industrial SMPS requiring stable component supply across extended product lifecycles.

Supply support for STD2N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

STD2N62K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications demanding low R_DS(on), high avalanche ruggedness, and fast dynamic response.

FAQ

What is the maximum continuous drain current for STD2N62K3 at 100 °C case temperature?

The maximum continuous drain current is 1 A at T_C = 100 °C, as specified in Table 1 of DS7248 Rev 3. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be applied in thermal design calculations for enclosed or high-ambient environments.

Does STD2N62K3 require an external gate resistor for safe operation?

Yes-a gate resistor (typically 4.7 Ω, per Figure 16 test circuit) is required to control dV/dt and prevent oscillation during switching. The intrinsic gate resistance is 5 Ω, but external series resistance ensures stable turn-on/turn-off timing and reduces EMI in practical layouts.

Can STD2N62K3 replace older MDmesh™ K2 devices like STD2N60K2 in existing designs?

Yes, with verification: STD2N62K3 offers lower R_DS(on) (3.6 Ω vs. 4.2 Ω) and higher V_DS (620 V vs. 600 V), but gate charge is similar (15 nC). Layout and thermal validation are required due to improved dynamic performance and tighter SOA margins at high V_DS.

Is the source-drain diode body diode rated for continuous conduction in synchronous rectification?

No-the body diode is not rated for continuous conduction; it is optimized for fast recovery in hard-switched topologies. For synchronous rectification, an external Schottky or MOSFET must be used, as the body diode's 2.2 A continuous rating applies only in source-follower configurations with limited duty cycle.

STD2N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD2N62K3 FAQ

1.How can I place an order for STD2N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD2N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD2N62K3 reliable?

The price and inventory of STD2N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD2N62K3 is usually 5 days.

3.What payment methods are accepted for STD2N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD2N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD2N62K3?

STD2N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD2N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD2N62K3?

For technical support, including STD2N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD2N62K3 requirements.

6.How does Aetrix verify that STD2N62K3 is sourced from the original manufacturer or authorized distributors?

All STD2N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD2N62K3 meets industry standards.

7.What is the process for return or replacement of STD2N62K3?

All STD2N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STD2N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD2N62K3 part is unused and in its original packaging.

Return procedure for STD2N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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