STMicroelectronics STD2N80K5

Overview

STD2N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, delivering 800 V V_DS, 4.5 Ω max R_DS(on) at 10 V V_GS, and 2 A continuous drain current in an IPAK (TO-251) package. It features ultra-low gate charge (5 nC), 100% avalanche tested operation, and Zener-protected gate for robust switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STD2N80K5 datasheet, STD2N80K5 pinout, STD2N80K5 application, or STD2N80K5 equivalent, key selection criteria include its 800 V breakdown rating, 5 nC total gate charge, 2.78 °C/W junction-to-case thermal resistance, 60.5 mJ single-pulse avalanche energy, and IPAK package footprint compatibility with TO-251 layouts.

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical silicon architecture to minimize conduction and switching losses simultaneously. Its 3.5 Ω typical R_DS(on) and low C_iss (105 pF) enable high-frequency operation while maintaining ruggedness under unclamped inductive switching.

The device integrates a Zener-protected gate and exhibits 50 V/ns MOSFET dv/dt ruggedness at V_DS ≤ 640 V. Its source-drain diode supports 2 A continuous conduction with 255 ns reverse recovery time at 25 °C and 285 ns at 150 °C, enabling reliable synchronous rectification and flyback snubberless designs.

Key Specifications

Pinout & Package

STD2N80K5 is housed in an IPAK (TO-251) type C package with exposed drain tab for thermal and electrical connection. The 3-pin configuration provides compact through-hole mounting and direct heatsinking via the metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP2N80K5, STD2N80K5 trades package thermal mass for PCB area savings and simplified assembly; versus FQP2N80, it delivers verified avalanche ruggedness and integrated gate protection-critical for industrial and medical power systems requiring zero-field-failure tolerance.

Availability

STD2N80K5 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and PFC boost stages requiring stable component supply, long-lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for STD2N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STD2N80K5 belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density offline power conversion in space- and thermal-constrained applications.

FAQ

What is the maximum continuous drain current for STD2N80K5 at 100 °C case temperature?

The maximum continuous drain current is 1.3 A at T_C = 100 °C, as specified in Table 1 of DS9820 Rev 4. This derating reflects thermal limitations of the IPAK package, where junction-to-case resistance (2.78 °C/W) and ambient conditions constrain safe operating area at elevated temperatures.

Does STD2N80K5 include integrated gate protection?

Yes - STD2N80K5 integrates a bidirectional Zener diode between gate and source, clamping gate-source voltage to ±20 V. This protection is explicitly documented in the "Features" section and confirmed in the revision history of DS9820 Rev 4, which notes removal of "Table 8. Gate-source Zener diode" due to its inclusion in the die design.

Can STD2N80K5 be used in zero-voltage switching (ZVS) circuits?

Yes - its 5 nC total gate charge, 0.5 nC gate-drain charge (Q_gd), and 105 pF input capacitance support clean ZVS turn-on in resonant topologies. The 50 V/ns dv/dt ruggedness ensures reliable operation during the resonant voltage transition phase without spurious turn-on.

What is the safe operating area (SOA) limitation for pulsed operation at 400 V drain-source voltage?

At V_DS = 400 V, the SOA is limited to 1.8 A for 10 ms pulses (Figure 1, DS9820 Rev 4). This limit arises from R_DS(on)-dominated conduction heating, not secondary breakdown, due to the MDmesh K5 structure's uniform current distribution and absence of localized thermal runaway.