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STMicroelectronics STD30NF06

Part No.:
STD30NF06
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD30NF06.pdf
Description:
MOSFET N-CH 60V 28A DPAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,027

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Product details

Overview

STD30NF06 from STMicroelectronics is an N-channel 60 V, 28 A, 0.020 Ω (typ.) power MOSFET in through-hole IPAK (TO-251) and surface-mount DPAK (TO-252) packages. It delivers high-current switching with exceptional dv/dt capability (10 V/ns), 100% avalanche tested ruggedness, and low gate charge (43 nC typ.), enabling use in motor control, DC-DC converters, and solenoid drivers.

For engineers reviewing the STD30NF06 datasheet, STD30NF06 pinout, STD30NF06 application, or STD30NF06 equivalent, key selection factors include its 60 V VDSS, 0.020 Ω RDS(on) at VGS = 10 V, 230 mJ single-pulse avalanche energy, 100% avalanche-tested reliability, and dual-package availability (IPAK suffix "-1", DPAK suffix "T4").

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, achieving high cell density for low on-resistance and improved thermal stability. Its internal structure supports fast switching (td(on) = 20 ns, tf = 20 ns) and robust unclamped inductive switching performance.

The device integrates a fast-recovery body diode (trr = 95 ns, Qrr = 260 µC) and exhibits stable threshold voltage (VGS(th) = 2–4 V) and transconductance (gfs = 40 S typ.) across temperature, supporting reliable gate-drive design in hard-switching topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Maximum drain-source blocking voltage for 24/48 V bus applications
RDS(on) (typ.)0.020 Ω at VGS = 10 V - Enables ≤0.8 W conduction loss at 20 A continuous current
ID (cont., TC = 25°C)28 A - Supports high-current motor phase or DC-DC primary-side switching
EAS230 mJ - Confirmed avalanche energy rating for inductive load turn-off safety
Qg (typ.)43 nC - Low gate charge reduces driver power and enables 100+ kHz switching
dv/dt (max)10 V/ns - High noise immunity in fast-switching, high-dI/dt environments
tr/tf100 ns / 20 ns - Fast edge rates support efficient hard-switched SMPS and motor PWM

Pinout & Package

STD30NF06 is offered in two industry-standard power packages: through-hole IPAK (TO-251, suffix "-1") and surface-mount DPAK (TO-252, suffix "T4"). Both share identical pinout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalControl input requiring ≥10 V drive for full enhancement; low Ciss (1750 pF) eases gate driver selection
Pin 2 (D)Drain terminal / exposed tabMain high-side or low-side switching node; tab is electrically connected to drain and serves as primary thermal path
Pin 3 (S)Source terminalPower return reference; ties to PCB ground plane; source inductance impacts switching ringing and dV/dt stress

Key Features

FeatureDesign Value
StripFET™ II process architectureEnables 0.020 Ω RDS(on) in TO-251/TO-252 without die size penalty, improving power density
100% avalanche testedGuarantees minimum 230 mJ single-pulse avalanche energy-no screening waivers or statistical sampling
Fast body diode (trr = 95 ns)Reduces recovery losses and EMI in synchronous rectification and freewheeling paths
High dv/dt immunity (10 V/ns)Withstands rapid voltage transients in half-bridge and LLC resonant circuits without false turn-on
Dual-package availabilityIPAK (-1) for prototyping and high-reliability through-hole assembly; DPAK (T4) for automated SMT production

Applications

Motor ControlDC-DC Converters

Use Scenario: Brushed DC motor H-bridge phase-leg switch in industrial actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side or high-side power switch handling 20–28 A peak current at 20–100 kHz PWM frequency.

Use Value: 0.020 Ω RDS(on) limits I²R loss to <1 W at 20 A, while 230 mJ EAS ensures safe inductive turn-off during direction reversal.

Use Scenario: Primary-side switch in 48 V input, 12 V output non-isolated buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 250 kHz with 50% duty cycle.

Use Value: 43 nC Qg and 100 ns tr enable efficient switching with standard gate drivers; 60 V VDSS provides 20% margin over 48 V rail.

Audio AmplifiersSolenoid & Relay Drivers

Use Scenario: Output stage switch in Class-D audio amplifier delivering 100 W into 4 Ω load.

IC Role / Device Role / Timing Role: High-speed output MOSFET in half-bridge configuration, switching at 300–500 kHz.

Use Value: Low Coss (220 pF) and fast tf (20 ns) minimize switching distortion and heat generation at high frequencies.

Use Scenario: High-current solenoid driver in automotive door-lock modules and industrial pneumatic valves.

IC Role / Device Role / Timing Role: Single-ended switch controlling 25 A inductive loads with 10 ms on-time pulses.

Use Value: 100% avalanche testing ensures survival of >100 V inductive kickback without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFZ44NPBFRDS(on) = 0.028 Ω (typ.), VDSS = 55 V, Qg = 67 nC - higher conduction loss and gate drive demandLimited to ≤40 V systems; less suitable for 48 V DC-DC due to lower voltage marginPrefer when cost sensitivity outweighs efficiency and 60 V rating requirements
STP30NF06LLogic-level variant: VGS(th) = 1–2.5 V, RDS(on) = 0.022 Ω - enables 5 V gate drive but slightly higher RDS(on)Better suited for microcontroller-driven low-voltage gate interfaces; same package and avalanche ratingSelect when direct 3.3/5 V MCU GPIO drive is required without level-shifting

Compared with IRFZ44NPBF and STP30NF06L, STD30NF06 offers superior 60 V rating and lowest Qg among the three, making it optimal for high-efficiency, high-voltage switching where gate drive headroom and avalanche robustness are critical.

Availability

STD30NF06 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and solenoid/relay driving applications requiring stable component supply, long-term manufacturability, and dual-package flexibility (IPAK and DPAK).

Supply support for STD30NF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

STD30NF06 belongs to ST's Power MOSFET portfolio built on StripFET™ technology, engineered specifically for high-current, high-reliability power switching in industrial motor drives, power supplies, and automotive body electronics.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (ID) for STD30NF06 is 20 A when the case temperature (TC) is maintained at 100°C. This derating reflects thermal limitations of the IPAK and DPAK packages, with a junction-to-case thermal resistance (Rthj-case) of 2.14°C/W. Proper heatsinking is required to sustain this current under continuous operation.

Does STD30NF06 have a built-in body diode, and what are its key recovery specs?

Yes, STD30NF06 integrates a fast-recovery intrinsic body diode. At Tj = 150°C, ISD = 28 A, and di/dt = 100 A/µs, its reverse recovery time (trr) is 95 ns, reverse recovery charge (Qrr) is 260 µC, and peak reverse recovery current (IRRM) is 5.5 A. These values are measured per Figure 5 test circuit and support efficient freewheeling in bridge configurations.

Can STD30NF06 be used in avalanche mode, and is it fully rated for that operation?

Yes-STD30NF06 is 100% avalanche tested per JEDEC JESD24-11, with a guaranteed single-pulse avalanche energy (EAS) of 230 mJ under specified conditions (ISD ≤ 28 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ 175°C). It is designed for controlled unclamped inductive switching, not repetitive avalanche operation.

What is the gate threshold voltage range, and how does it vary with temperature?

The gate threshold voltage (VGS(th)) of STD30NF06 is specified from 2 V to 4 V at Tj = 25°C and ID = 250 µA. As shown in Figure 5 of the datasheet, VGS(th) decreases linearly with rising junction temperature, exhibiting a typical negative temperature coefficient of ~−5 mV/°C, ensuring stable turn-on behavior across −55°C to 175°C operating range.

STD30NF06 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1750 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
70W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD30NF06 FAQ

1.How can I place an order for STD30NF06 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD30NF06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD30NF06 reliable?

The price and inventory of STD30NF06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD30NF06 is usually 5 days.

3.What payment methods are accepted for STD30NF06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD30NF06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD30NF06?

STD30NF06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD30NF06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD30NF06?

For technical support, including STD30NF06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD30NF06 requirements.

6.How does Aetrix verify that STD30NF06 is sourced from the original manufacturer or authorized distributors?

All STD30NF06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD30NF06 meets industry standards.

7.What is the process for return or replacement of STD30NF06?

All STD30NF06 units undergo pre-shipment inspection (PSI). If there is an issue with STD30NF06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD30NF06 part is unused and in its original packaging.

Return procedure for STD30NF06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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