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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD30NF06T4

Name: STD30NF06T4
Brand: STMicroelectronics
SKU: STD30NF06T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD30NF06T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD30NF06T4.pdf

Description:: MOSFET N-CH 60V 28A DPAK

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Product details

Overview

STD30NF06 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in surface-mount DPAK (TO-252) package, rated for 60 V V_DS, 28 A continuous drain current at T_C = 25 °C, and typ. R_DS(on) = 0.020 Ω at V_GS = 10 V. It delivers high-speed switching with 10 V/ns dv/dt capability and is 100% avalanche tested-used in DC-DC converters and solenoid drivers where ruggedness and low conduction loss are critical.

For engineers reviewing the STD30NF06 datasheet, STD30NF06 pinout, STD30NF06 application, or STD30NF06 equivalent, key selection factors include its 28 A continuous current rating at 25 °C, 0.020 Ω on-resistance, TO-252 thermal resistance of 2.14 °C/W (junction-to-case), unclamped inductive switching capability, and integrated body diode with 95 ns reverse recovery time.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low R_DS(on). Its gate charge profile (Q_g = 43–58 nC) and fast switching times (t_d(on) = 20 ns, t_f = 20 ns) support high-frequency operation up to several hundred kHz in hard-switched topologies.

The device integrates a robust intrinsic body diode with I_SD = 28 A continuous and 112 A pulsed rating, V_SD = 1.5 V at I_SD = 28 A, and trr = 95 ns under specified di/dt and temperature conditions-critical for freewheeling and synchronous rectification roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage in off-state; sets upper limit for bus voltage in buck, flyback, or half-bridge stages
R_DS(on)	0.020 Ω (typ.) at V_GS = 10 V - determines conduction loss (P = I²R) at 15 A: ~4.5 W dissipation before derating
I_D (cont)	28 A at T_C = 25 °C - usable continuous current only when case temperature is actively maintained at 25 °C
Q_g	43–58 nC - total gate charge defining drive strength requirement; impacts switching loss and gate driver sizing
dv/dt	10 V/ns - peak diode recovery voltage slope tolerance; enables reliable operation in inductive switching with minimal snubbing
E_AS	230 mJ - single-pulse avalanche energy rating; supports unclamped inductive turn-off without failure
trr	95 ns - reverse recovery time of integrated body diode; constrains minimum dead-time in synchronous rectifiers

Pinout & Package

STD30NF06 is supplied in surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad serves as primary heat path and electrical connection to drain network.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; input capacitance C_iss = 1750 pF affects drive loop stability
2 (D)	Drain	Main high-side power terminal; connected to exposed copper pad for thermal and electrical conduction; handles full load current and voltage stress
3 (S)	Source	Reference node for gate drive; forms return path for load current; used for current sensing in low-side configurations

Key Features

Feature	Design Value
StripFET™ II process architecture	Enables 0.020 Ω R_DS(on) in TO-252 without die size penalty-improves power density vs. planar MOSFETs
100% avalanche tested	Guarantees E_AS ≥ 230 mJ per unit-eliminates need for external clamping in relay/solenoid inductive loads
High dv/dt immunity (10 V/ns)	Prevents spurious turn-on during fast voltage transients-reduces risk of shoot-through in bridge circuits
Low Q_gd/Q_g ratio (≈0.26)	Improves Miller immunity and hard-switching robustness-supports stable operation with moderate gate resistors

Applications

Motor Control

DC-DC Converters

Use Scenario: H-bridge driver for 24–48 V brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch handling 20–25 A continuous current with PWM frequencies up to 100 kHz.

Use Value: 0.020 Ω R_DS(on) limits conduction loss to ≤12.5 W at 25 A, reducing heatsink requirements versus higher-R_DS(on) alternatives.

Use Scenario: Synchronous rectifier in 48 V input, 12 V output isolated forward converter.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; body diode conducts during dead-time.

Use Value: 95 ns trr and 1.5 V V_SD minimize reverse recovery loss and forward drop-improving efficiency by ~1.2% over 40 V Schottky.

Solenoid Drivers

Audio Amplifiers

Use Scenario: High-current pulse driver for automotive fuel injectors or HVAC valve coils.

IC Role / Device Role / Timing Role: Single-ended switch controlling 28 A inductive loads with 10 ms on-time and fast turn-off.

Use Value: 230 mJ E_AS rating absorbs stored inductive energy without snubber-simplifies PCB layout and BOM.

Use Scenario: Output stage in Class-D audio amplifier delivering 50 W into 4 Ω load.

IC Role / Device Role / Timing Role: Half-bridge high- and low-side switch operating at 300–500 kHz carrier frequency.

Use Value: 10 V/ns dv/dt capability prevents false triggering during rail transitions-maintaining THD < 0.05% at full power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω (typ.), Q_g = 67 nC, TO-220 package	Higher conduction loss and larger footprint; lacks avalanche rating documentation	Acceptable for cost-sensitive, non-avalanche-critical linear or low-frequency switching
STP30NF06L	Logic-level variant: V_GS(th) = 1–2.5 V; R_DS(on) = 0.022 Ω at V_GS = 5 V	Better compatibility with 3.3 V/5 V microcontrollers but lower dv/dt rating (5 V/ns)	Preferred when gate drive voltage is limited; trade-off is reduced noise immunity in high-dV/dt environments

Compared with IRFZ44NPBF and STP30NF06L, STD30NF06 offers superior avalanche ruggedness and dv/dt immunity-making it optimal for unclamped inductive loads and high-noise industrial environments where reliability outweighs gate-drive convenience.

Availability

STD30NF06 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and solenoid driving applications requiring stable component supply across industrial OEM production cycles.

Supply support for STD30NF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STD30NF06 belongs to ST's Power MOSFET portfolio built on StripFET™ technology-engineered specifically for high-efficiency, high-reliability power switching in industrial motor drives and power supplies.

FAQ

What is the maximum safe operating junction temperature for STD30NF06?

The maximum operating junction temperature (T_j) is 175 °C, as specified in the Absolute Maximum Ratings table. Operation above this temperature risks permanent parametric shift or catastrophic failure. Derating begins at T_C = 25 °C with a factor of 0.47 W/°C for P_tot.

Can STD30NF06 be used in a high-side configuration with 10 V gate drive?

Yes-STD30NF06 is a standard-threshold N-channel MOSFET with V_GS(th) = 2–4 V and fully enhanced at V_GS = 10 V. However, high-side use requires a floating gate driver capable of delivering ≥10 V referenced to the source node, such as a bootstrap or isolated gate driver IC.

Does STD30NF06 have a specified SOA curve for linear-mode operation?

Yes-the datasheet includes a Safe Operating Area (SOA) graph on page 4, specifying DC, pulsed, and avalanche-limited boundaries. For linear-mode use (e.g., electronic load), operation must stay within the 10 ms and 100 µs curves at T_C = 25 °C, with strict attention to thermal runaway at high V_DS/I_D combinations.

Is the body diode suitable for continuous freewheeling in a buck converter?

Yes-the integrated body diode is rated for I_SD = 28 A continuous and exhibits V_SD = 1.5 V at 28 A and T_j = 150 °C. However, its 95 ns trr and 5.5 A I_RRM require careful dead-time management to avoid cross-conduction losses in synchronous buck topologies.

STD30NF06T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD30NF06T4 FAQ

1.How can I place an order for STD30NF06T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD30NF06T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD30NF06T4 reliable?

The price and inventory of STD30NF06T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD30NF06T4 is usually 5 days.

3.What payment methods are accepted for STD30NF06T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD30NF06T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD30NF06T4?

STD30NF06T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD30NF06T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD30NF06T4?

For technical support, including STD30NF06T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD30NF06T4 requirements.

6.How does Aetrix verify that STD30NF06T4 is sourced from the original manufacturer or authorized distributors?

All STD30NF06T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD30NF06T4 meets industry standards.

7.What is the process for return or replacement of STD30NF06T4?

All STD30NF06T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD30NF06T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD30NF06T4 part is unused and in its original packaging.

Return procedure for STD30NF06T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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