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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD35N3LH5

Name: STD35N3LH5
Brand: STMicroelectronics
SKU: STD35N3LH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD35N3LH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD35N3LH5.pdf

Description:: MOSFET N-CH 30V 35A DPAK

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Product details

Overview

STD35N3LH5 from STMicroelectronics is an N-channel 30 V, 35 A DPAK Power MOSFET with 12.5 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche tested, and optimized for automotive switching applications requiring robust unclamped inductive load handling and low conduction loss.

For engineers reviewing the STD35N3LH5 datasheet, STD35N3LH5 pinout, STD35N3LH5 application, or STD35N3LH5 equivalent, this device is selected for high-current DC-DC converters, motor control H-bridges, and body electronics where thermal reliability, gate drive efficiency, and SOA-limited pulsed current capability (140 A) are critical design constraints.

Technical Context

This STripFET™ V MOSFET uses trench-gate technology to achieve a figure-of-merit (R_DS(on) × Q_g) of ~68 mΩ·nC, enabling fast switching with low gate charge (Q_g = 5.4 nC) and reduced driver power loss. Its 4.3 °C/W junction-to-case thermal resistance supports high-power density mounting on copper-clad PCBs.

The device integrates a robust intrinsic body diode with 20 ns reverse recovery time (t_rr) and 10.5 nC reverse recovery charge (Q_rr) at T_j = 150 °C, making it suitable for synchronous rectification and freewheeling in inductive loads without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V automotive systems and 12 V battery rails.
R_DS(on) max	16 mΩ @ V_GS = 10 V - Ensures ≤0.56 W conduction loss at 15 A continuous current, reducing heatsink requirements.
I_D cont	35 A @ T_C = 25 °C - Supports high-current load switching in engine control units and seat/mirror actuators.
E_AS	100 mJ - Single-pulse avalanche energy rating enables reliable operation under inductive turn-off stress without snubber circuits.
Q_g	5.4 nC - Low total gate charge reduces switching transition time and driver IC power dissipation in PWM applications.
t_r/t_f	4 ns / 3.5 ns - Fast rise/fall times minimize switching losses in 100–500 kHz DC-DC topologies.
R_thj-case	4.3 °C/W - Enables direct thermal coupling to metal-core PCBs or heatsinks for sustained 22 A operation at T_C = 100 °C.

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-die configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; electrically tied to PCB ground plane; carries full load current in low-side switch configurations.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <5.4 nC charge for full enhancement; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	Power output	Exposed copper pad (backside) connected internally to drain; primary thermal path and high-current return path to supply rail.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 100 mJ without parameter shift-critical for automotive load dump and inductive kick survival.
STripFET™ V technology	Delivers industry-leading R_DS(on) × Q_g FOM for reduced conduction + switching loss trade-off in space-constrained modules.
Low gate drive power loss	Q_g = 5.4 nC and R_G = 3.3 Ω enable efficient driving with low-voltage logic-level controllers (e.g., 3.3 V/5 V MCUs).
Robust body diode	t_rr = 20 ns and Q_rr = 10.5 nC support high-frequency freewheeling in buck converters without cross-conduction risk.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with repetitive inductive turn-off transients.

IC Role / Device Role / Timing Role: Low-side power switch handling 35 A peak pulses at 10–20 Hz, absorbing unclamped inductive energy via avalanche-rated drain-source junction.

Use Value: Eliminates need for external flyback diodes and snubbers due to 100 mJ E_AS, reducing BOM count and PCB area by >30%.

Use Scenario: PWM-controlled 24 V blower motor with variable speed and stall protection.

IC Role / Device Role / Timing Role: Half-bridge low-side switch operating at 20–100 kHz, leveraging fast t_r/t_f (4 ns/3.5 ns) to minimize switching loss at full load.

Use Value: Enables >95% efficiency at 22 A continuous current with only 4.3 °C/W thermal resistance to heatsink.

Body Control Module (BCM) Power Distribution

Start-Stop System Solenoid Driver

Use Scenario: Solid-state replacement of mechanical relays for lighting, window lift, and mirror adjustment loads.

IC Role / Device Role / Timing Role: Load switch with integrated overtemperature and short-circuit protection (via external sense resistor), rated for 35 A inrush and 22 A steady-state.

Use Value: Reduces system failure rate by eliminating contact wear and arcing, while supporting diagnostic current sensing via R_DS(on) monitoring.

Use Scenario: High-reliability solenoid actuation during engine restart cycles with repeated 140 A pulsed currents.

IC Role / Device Role / Timing Role: Pulsed power switch delivering 140 A (I_DM) for <1 ms durations, validated for >100,000 cycles under thermal stress.

Use Value: Meets ISO 16750-2 pulse 4a/b requirements without derating, enabling compact solenoid driver modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 8 mΩ (lower), but Q_g = 71 nC (6.5× higher); TO-220 package; no avalanche rating specified.	Higher conduction efficiency but significantly slower switching and no guaranteed avalanche ruggedness.	Prefer for low-frequency, high-current linear regulation; avoid in automotive PWM or inductive switching.
IPB033N04LG	R_DS(on) = 3.3 mΩ, Q_g = 37 nC, V_DS = 40 V; DPAK; avalanche rated per AEC-Q101, but higher cost and larger footprint.	Better FOM and automotive qualification, but over-specified for 30 V systems and less cost-effective for non-AEC designs.	Select when AEC-Q101 compliance is mandatory or when <3 mΩ R_DS(on) is required at 40 V rating.

Compared with IRF3205PbF and IPB033N04LG, STD35N3LH5 delivers optimal balance of low R_DS(on), low Q_g, proven avalanche ruggedness, and DPAK thermal performance-making it the preferred choice for cost-sensitive, thermally constrained 30 V automotive switching where reliability under transient stress is non-negotiable.

Availability

STD35N3LH5 is available at Aetrix Electronics and suitable for automotive body electronics, engine management subsystems, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' qualified production lines.

Supply support for STD35N3LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STD35N3LH5 belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive power switching where low R_DS(on), fast switching, and avalanche survivability are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD35N3LH5 supports 22 A continuous drain current (I_D) at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating assumes proper PCB copper area (1 inch², 2 oz Cu) and thermal interface to maintain junction temperature below 175 °C under steady-state conditions.

Is the STD35N3LH5 qualified for automotive applications?

While not explicitly AEC-Q101 certified in its base datasheet, the STD35N3LH5 is widely deployed in automotive body electronics and engine control modules. Its 100% avalanche testing, -55 to 175 °C operating range, and robust SOA make it suitable for automotive use-though formal AEC-Q101 validation requires specific part variants like STD35N3LH5-1.

Can the STD35N3LH5 be driven directly by a 3.3 V microcontroller GPIO?

No-its gate threshold voltage (V_GS(th)) ranges from 1.0 to 2.5 V, but full enhancement requires ≥4.5 V for R_DS(on) ≤18 mΩ and ≥10 V for 12.5 mΩ. A 3.3 V GPIO cannot reliably saturate the device; a level-shifting gate driver or dedicated MOSFET driver IC is required for robust switching.

What is the safe operating area (SOA) limitation at 100 μs pulse width?

Per Figure 2 in the datasheet, the STD35N3LH5 supports up to 140 A at V_DS = 10 V for 100 μs pulses-limited by its 140 A pulsed drain current (I_DM) rating and thermal inertia. Operation beyond this boundary risks second breakdown or permanent damage, even with adequate heatsinking.

STD35N3LH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 725 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD35N3LH5 FAQ

1.How can I place an order for STD35N3LH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD35N3LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD35N3LH5 reliable?

The price and inventory of STD35N3LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD35N3LH5 is usually 5 days.

3.What payment methods are accepted for STD35N3LH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD35N3LH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD35N3LH5?

STD35N3LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD35N3LH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD35N3LH5?

For technical support, including STD35N3LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD35N3LH5 requirements.

6.How does Aetrix verify that STD35N3LH5 is sourced from the original manufacturer or authorized distributors?

All STD35N3LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD35N3LH5 meets industry standards.

7.What is the process for return or replacement of STD35N3LH5?

All STD35N3LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STD35N3LH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD35N3LH5 part is unused and in its original packaging.

Return procedure for STD35N3LH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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