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STMicroelectronics STD36NH02L

Part No.:
STD36NH02L
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD36NH02L.pdf
Description:
MOSFET N-CH 24V 30A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,090

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Product details

Overview

STD36NH02L from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, rated for 24 V VDSS, 30 A continuous drain current at TC = 25°C, and 0.011 Ω typical RDS(on) at VGS = 10 V. It features low gate charge (15.5 nC), fast switching (tf = 15 ns), and optimized for high-efficiency DC-DC converters in power supply modules.

For engineers reviewing the STD36NH02L datasheet, STD36NH02L pinout, STD36NH02L application, or STD36NH02L equivalent, key selection criteria include conduction loss minimization in 24 V synchronous buck stages, avalanche energy rating (200 mJ), thermal resistance (Rthj-case = 3.33 °C/W), and gate drive compatibility with 5 V–10 V logic-level controllers.

Technical Context

This STripFET™ III device employs advanced trench-gate process technology to achieve industry-leading RDS(on) × Qg product, directly reducing both conduction and switching losses. Its 24 V breakdown voltage and 0.011 Ω on-resistance support high-current, low-voltage synchronous rectification where voltage headroom is constrained.

The MOSFET integrates a robust body diode with 24 ns reverse recovery time and 1.5 V forward voltage at 15 A, enabling reliable operation in hard-switched inductive loads. Thermal design is supported by low junction-to-case resistance (3.33 °C/W) and JEDEC-standard DPAK footprint for efficient PCB copper thermal spreading.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 24 V - Maximum blocking voltage in DC-DC high-side or low-side switch position without avalanche stress under normal operation
RDS(on) (typ) 0.011 Ω @ VGS = 10 V, ID = 15 A - Enables ≤5 W conduction loss at 30 A, critical for thermally constrained 24 V input converters
Qg (tot) 15.5 nC - Reduces gate driver power demand and switching transition time, supporting >500 kHz PWM frequencies
tf 15 ns @ RG = 4.7 Ω - Limits switching loss during turn-off and improves EMI profile in high-frequency power stages
EAS 200 mJ - Withstands single unclamped inductive energy events common in motor drive or converter startup faults
Rthj-case 3.33 °C/W - Allows direct heatsinking via PCB copper pour, enabling 45 W dissipation at ≤100°C case temperature
ID (cont) 30 A @ TC = 25°C - Sustains full-rated output current in compact power modules with active or passive cooling

Pinout & Package

STD36NH02L uses the standard DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package complies with ECOPACK® environmental requirements and JEDEC MO-238 mechanical standards.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Reference node for gate drive; connects to power ground or low-side return path in buck/synchronous rectifier topologies
Pin 2 (Gate) Control terminal (G) High-impedance MOSFET control input; requires <4.7 Ω series gate resistor to limit ringing and optimize tr/tf
Pin 3 (Drain) Power output terminal (D) Exposed metal pad - electrically and thermally connected to drain; must be soldered to large PCB copper area for heat dissipation

Key Features

Feature Design Value
STripFET™ III trench-gate architecture Delivers lowest RDS(on) × Qg ratio in 24 V class, directly lowering total power loss in high-duty-cycle applications
Low RDS(on) at 5 V gate drive 0.013 Ω @ VGS = 5 V enables direct interface with 5 V microcontrollers or PWM ICs without level-shifting
Robust body diode 1.5 V VSD @ 15 A and 24 ns trr supports synchronous rectification and reduces need for external Schottky diodes
ECOPACK® lead-free construction Meets RoHS Directive 2011/65/EU and JEDEC JESD97 marking standards for environmentally compliant manufacturing

Applications

DC-DC Buck Converter 24 V Automotive Power Module

Use Scenario: High-efficiency 24 V input to 3.3–12 V output step-down converter in industrial PLC power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating in continuous conduction mode (CCM) with 300–600 kHz switching frequency.

Use Value: 0.011 Ω RDS(on) reduces conduction loss by ≥35% vs. legacy 24 V MOSFETs, enabling >95% efficiency at 20 A load.

Use Scenario: Load switch and reverse-polarity protection in 24 V vehicle infotainment head units.

IC Role / Device Role / Timing Role: High-current N-channel high-side switch controlled via charge pump gate driver.

Use Value: 30 A continuous rating and 200 mJ avalanche capability ensure survival during battery jump-start transients and load dump events.

Motor Drive Half-Bridge Hot-Swap Controller

Use Scenario: Low-voltage BLDC motor phase leg in 24 V e-bike controller with integrated gate driver.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at ≤20 kHz with PWM dead-time control.

Use Value: Fast 15 ns fall time and low Qgd (1.7 nC) minimize shoot-through risk and improve torque resolution at low speeds.

Use Scenario: Inrush current limiter and fault protection in 24 V telecom shelf power distribution units.

IC Role / Device Role / Timing Role: Controlled hot-swap FET placed between input connector and downstream DC-DC stage.

Use Value: 0.0145 Ω max RDS(on) limits voltage drop to <435 mV at 30 A, preserving system regulation margin during plug-in events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 24 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF7470PBF RDS(on) = 0.012 Ω @ 10 V, Qg = 22 nC, D2PAK package Higher gate charge increases driver loss; larger D2PAK requires more PCB area Preferred when higher avalanche ruggedness (EAS = 320 mJ) is prioritized over board space and switching speed
DMN2012LFG-7 RDS(on) = 0.012 Ω @ 4.5 V, Qg = 11.5 nC, 2×2 mm WDFN package Smaller footprint but lower current rating (12 A) and no exposed drain pad for thermal relief Selected for ultra-compact 24 V point-of-load regulators where peak current ≤12 A and thermal budget allows

Compared with IRF7470PBF and DMN2012LFG-7, STD36NH02L uniquely balances low RDS(on), moderate Qg, DPAK thermal performance, and 24 V system compatibility-making it optimal for cost-sensitive, medium-power 24 V industrial converters requiring proven reliability and manufacturability.

Availability

STD36NH02L is available at Aetrix Electronics and suitable for DC-DC buck converters, 24 V automotive power modules, and motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for STD36NH02L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for industrial, automotive, and consumer markets.

STD36NH02L belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in 12–24 V systems where thermal density and switching loss are primary constraints.

FAQ

Is STD36NH02L suitable for 5 V gate drive applications?

Yes. STD36NH02L specifies RDS(on) = 0.013 Ω (max) at VGS = 5 V and ID = 15 A, confirming full enhancement with standard 5 V logic-level drivers. Gate threshold voltage is 1.0–2.5 V, ensuring reliable turn-on across temperature and process variation.

What is the maximum safe operating temperature for continuous operation?

The device supports continuous operation up to TJ = 175°C, with derating beginning at TC = 25°C. At TC = 100°C, the 30 A continuous current rating remains valid per Table 1, provided Rthj-case ≤ 3.33 °C/W is maintained via adequate PCB copper area.

Does STD36NH02L have built-in ESD protection?

No. STD36NH02L does not integrate on-die ESD protection structures. Gate oxide withstands ±20 V VGS, but handling and PCB layout require external ESD safeguards-such as series gate resistors and TVS clamping-per ST AN4195 guidelines for MOSFET layout.

Can STD36NH02L replace older STripFET II devices like STD25NH02LT4?

Yes, with verified improvement. STD36NH02L offers 12% lower RDS(on) (0.011 Ω vs. 0.0125 Ω) and 20% lower Qg (15.5 nC vs. 19.5 nC) versus STD25NH02LT4, while maintaining identical DPAK footprint and pinout-enabling drop-in efficiency upgrades in existing 24 V power designs.

STD36NH02L Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ III
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
24 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD36NH02L FAQ

1.How can I place an order for STD36NH02L through Aetrix?

Please submit a Request for Quotation (RFQ) for STD36NH02L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD36NH02L reliable?

The price and inventory of STD36NH02L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD36NH02L is usually 5 days.

3.What payment methods are accepted for STD36NH02L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD36NH02L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD36NH02L?

STD36NH02L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD36NH02L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD36NH02L?

For technical support, including STD36NH02L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD36NH02L requirements.

6.How does Aetrix verify that STD36NH02L is sourced from the original manufacturer or authorized distributors?

All STD36NH02L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD36NH02L meets industry standards.

7.What is the process for return or replacement of STD36NH02L?

All STD36NH02L units undergo pre-shipment inspection (PSI). If there is an issue with STD36NH02L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD36NH02L part is unused and in its original packaging.

Return procedure for STD36NH02L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD36NH02L Tags

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