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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD3NK60Z-1

Name: STD3NK60Z-1
Brand: STMicroelectronics
SKU: STD3NK60Z-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD3NK60Z-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD3NK60Z-1.pdf

Description:: MOSFET N-CH 600V 2.4A IPAK

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Inventory:2,896

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Product details

Overview

STD3NK60Z-1 from STMicroelectronics is a Zener-protected N-channel 600 V SuperMESH™ Power MOSFET in IPAK (TO-251) package, rated for 2.4 A continuous drain current at 25 °C, 3.2 Ω typical R_DS(on), and 4.5 V/ns peak dv/dt capability. It delivers robust avalanche performance (150 mJ single-pulse), low gate charge (11.8 nC), and intrinsic ESD protection (2.1 kV HBM), making it suitable for high-reliability offline switch-mode power supplies.

For engineers reviewing the STD3NK60Z-1 datasheet, STD3NK60Z-1 pinout, STD3NK60Z-1 application, or STD3NK60Z-1 equivalent, key selection criteria include its 600 V breakdown voltage, Zener-protected gate, IPAK thermal resistance (R_thj-case = 2.78 °C/W), 100% avalanche-tested reliability, and compatibility with flyback and SMPS primary-side switching topologies.

Technical Context

This device employs ST's SuperMESH™ process to reduce on-resistance while maintaining high dv/dt immunity-critical for noisy industrial and AC-DC converter environments. Its built-in back-to-back gate-source Zener diodes (±30 V breakdown) eliminate external clamping components and enhance system-level ESD robustness without sacrificing switching speed.

The MOSFET features low output capacitance (C_oss = 43 pF) and reverse transfer capacitance (C_rss = 8 pF), enabling fast turn-off and reduced switching losses. Its source-drain diode supports 2.4 A continuous conduction with 1.6 V forward drop and 306 ns reverse recovery time at 150 °C-enabling quasi-resonant operation in high-efficiency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage in universal-input offline SMPS designs
R_DS(on) typ.	3.2 Ω - Enables low conduction loss at 2.4 A, reducing thermal stress in compact IPAK footprint
I_D cont. @ T_C = 25 °C	2.4 A - Sustains full-load current in 15–25 W flyback converters without forced cooling
Q_g	11.8 nC - Minimizes driver power requirement and gate drive loop energy loss
dv/dt capability	4.5 V/ns - Resists false triggering during high-slew-rate transients in noisy EMI environments
E_AS	150 mJ - Survives unclamped inductive switching events without failure in transformer-coupled topologies
V_(BR)GSO	±30 V - Integrated Zener clamps gate voltage during surge or layout-induced coupling

Pinout & Package

STD3NK60Z-1 uses the IPAK (TO-251) package with three terminals: Drain (Tab), Gate (Pin 1), Source (Pin 3). The metal tab is electrically connected to the Drain and serves as the primary heat path. Pin 2 is not present-IPAK is a 3-terminal, single-row leaded package.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-voltage power terminal	Electrically tied to internal drain structure; requires isolation from heatsink unless referenced to same potential
Pin 1 (G)	Gate control input	Low-impedance control node; sensitive to ESD-requires series gate resistor and layout care
Pin 3 (S)	Source return path	Reference node for gate drive; carries full load current and must be routed with low inductance

Key Features

Feature	Design Value
Zener-protected gate	Integrated ±30 V bidirectional clamping eliminates need for external TVS diodes in gate drive circuits
100% avalanche tested	Each unit validated for single-pulse avalanche energy up to 150 mJ-ensures field reliability under overvoltage stress
Extremely high dv/dt capability	4.5 V/ns rating prevents spurious turn-on during fast transient coupling in high-noise switch-node layouts
Low intrinsic capacitance	C_iss = 311 pF, C_oss = 43 pF - Reduces switching losses and improves efficiency in 65–130 kHz SMPS designs
SuperMESH™ technology	Optimized cell layout achieves 3.2 Ω R_DS(on) at 600 V-lower on-resistance than prior-generation PowerMESH™ devices

Applications

AC-DC Adapter

LED Driver

Use Scenario: Universal-input (90–264 V_AC) 18 W flyback adapter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; operates at 65 kHz with DCM/CCM boundary mode.

Use Value: 600 V rating handles 385 V DC bus with margin; Zener protection avoids gate overstress during line surges per IEC 61000-4-5.

Use Scenario: Isolated constant-current LED driver for commercial downlights (24 V_out/700 mA).

IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology; synchronized to valley-switching controller.

Use Value: Low C_rss (8 pF) enables clean zero-voltage switching; 306 ns t_rr minimizes diode recovery loss during resonant transitions.

Industrial Power Supply

Appliance Motor Control

Use Scenario: 24 V/2 A auxiliary supply in PLC backplane, operating continuously at 60 °C ambient.

IC Role / Device Role / Timing Role: Main power switch in fixed-frequency 100 kHz flyback; thermally coupled to aluminum chassis via isolated mounting.

Use Value: R_thj-case = 2.78 °C/W allows 45 W dissipation at 25 °C case temperature-supports derated 1.51 A operation at 100 °C junction.

Use Scenario: High-side switch in universal motor control stage of washing machine main board.

IC Role / Device Role / Timing Role: Blocking switch for 230 V_AC phase control; triggered by triac driver with snubberless commutation.

Use Value: 4.5 V/ns dv/dt immunity prevents false turn-on during triac commutation spikes; 100% avalanche test ensures survival during motor stall events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60Z	Same die, TO-220 package; R_thj-case = 6.25 °C/W vs. 2.78 °C/W for IPAK	Better heatsinking capability but larger PCB footprint; higher thermal mass slows transient response	Select when mechanical mounting to large heatsink is preferred and space permits TO-220 outline
STD3NK60ZT4	Same IPAK package but tape-and-reel packaging; identical electrical specs and thermal data	Designed for automated SMT assembly; tube-packaged STD3NK60Z-1 suits manual or low-volume prototyping	Select STD3NK60ZT4 for production runs requiring pick-and-place compatibility

Compared with STP3NK60Z and STD3NK60ZT4, STD3NK60Z-1 offers optimal balance of thermal performance (2.78 °C/W), compact IPAK footprint, and tube-based ease-of-use for engineering validation-making it ideal for design-in and small-batch manufacturing where thermal density and layout flexibility matter most.

Availability

STD3NK60Z-1 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial auxiliary power supplies, and LED driver reference designs requiring stable component supply and long-term manufacturability.

Supply support for STD3NK60Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD3NK60Z-1 belongs to ST's SuperMESH™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications where ruggedness, low EMI, and integrated protection are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current for STD3NK60Z-1 at T_C = 100 °C is 1.51 A, as specified in Table 1 of DS2912 Rev 6. This derating reflects thermal limits of the IPAK package and ensures safe operation within the SOA boundary at elevated temperatures.

Does STD3NK60Z-1 require an external gate Zener diode?

No. STD3NK60Z-1 integrates back-to-back gate-source Zener diodes with ±30 V breakdown voltage (Table 8), providing inherent overvoltage protection. External clamping is unnecessary unless system-level transients exceed this rating or layout introduces excessive gate inductance.

Can STD3NK60Z-1 replace STP3NK60Z in an existing TO-220 layout?

No direct replacement is possible due to differing packages: STD3NK60Z-1 uses IPAK (TO-251), while STP3NK60Z uses TO-220. Footprint, thermal pad geometry, and lead spacing are incompatible. A PCB redesign is required to migrate from TO-220 to IPAK.

What is the typical gate threshold voltage range?

The gate threshold voltage (V_GS(th)) for STD3NK60Z-1 is specified as 3.0 V (min), 3.75 V (typ), and 4.5 V (max) at I_D = 50 µA (Table 4). This tight distribution ensures consistent turn-on behavior across temperature and process variation in production systems.

STD3NK60Z-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 11.8 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 311 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD3NK60Z-1 FAQ

1.How can I place an order for STD3NK60Z-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD3NK60Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD3NK60Z-1 reliable?

The price and inventory of STD3NK60Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD3NK60Z-1 is usually 5 days.

3.What payment methods are accepted for STD3NK60Z-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD3NK60Z-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD3NK60Z-1?

STD3NK60Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD3NK60Z-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD3NK60Z-1?

For technical support, including STD3NK60Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD3NK60Z-1 requirements.

6.How does Aetrix verify that STD3NK60Z-1 is sourced from the original manufacturer or authorized distributors?

All STD3NK60Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD3NK60Z-1 meets industry standards.

7.What is the process for return or replacement of STD3NK60Z-1?

All STD3NK60Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD3NK60Z-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD3NK60Z-1 part is unused and in its original packaging.

Return procedure for STD3NK60Z-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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