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STMicroelectronics STD3NK80Z-1

Part No.:
STD3NK80Z-1
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixSTD3NK80Z-1.pdf
Description:
MOSFET N-CH 800V 2.5A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,395

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Product details

Overview

STD3NK80Z-1 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 3.6 Ω typical RDS(on), and 2.5 A continuous drain current at TC = 25 °C. It features 100% avalanche testing, minimized gate charge (19 nC), and low output capacitance (Coss = 57 pF), enabling robust high-voltage switching in offline SMPS.

For engineers reviewing the STD3NK80Z-1 datasheet, STD3NK80Z-1 pinout, STD3NK80Z-1 application, or STD3NK80Z-1 equivalent, key selection criteria include its 4.5 V/ns dv/dt capability, 170 mJ single-pulse avalanche energy, Zener-protected gate, and DPAK (TO-252) thermal resistance of 1.78 °C/W junction-to-case.

Technical Context

This device implements ST's SuperMESH technology - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance dv/dt ruggedness. Its Zener-protected gate structure withstands ±30 V transient stress, and intrinsic capacitances (Ciss = 485 pF, Crss = 11 pF) are optimized for fast, low-loss switching in hard-switched topologies.

The integrated source-drain diode exhibits 1.6 V forward voltage at 2.5 A and 384 ns reverse recovery time (TJ = 25 °C), supporting quasi-resonant and flyback converter designs where diode recovery behavior directly impacts EMI and efficiency.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 800 V - Supports primary-side switching in universal-input AC-DC converters up to 380 V DC bus.
RDS(on) typ. 3.6 Ω - Enables <1.5 W conduction loss at 2.5 A, suitable for <65 W offline adapters.
Qg 19 nC - Reduces gate drive power and enables use with low-current controllers like L6565.
EAS 170 mJ - Withstands unclamped inductive switching events without failure in flyback snubberless designs.
RthJC 1.78 °C/W - Allows 70 W dissipation with ≤125 °C junction rise over case, compatible with standard DPAK heatsinking.
dv/dt rating 4.5 V/ns - Ensures noise immunity and prevents spurious turn-on in high-dV/dt environments like PFC stages.
VGS(th) 3.0–4.5 V - Compatible with 5 V and 12 V gate drivers; avoids false triggering near logic thresholds.

Pinout & Package

STD3NK80Z-1 is housed in a DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The plastic body provides creepage/clearance compliance for reinforced insulation in Class II systems.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; accepts 0–10 V logic-level drive; Zener-clamped to ±30 V for ESD robustness.
2 (D / TAB) Drain / Heat Sink Pad Main high-voltage power path; electrically connected to metal tab for low-inductance, low-thermal-resistance mounting.
3 (S) Source Power return and reference node; ties to ground or switching node depending on topology (e.g., low-side switch).

Key Features

Feature Design Value
100% avalanche tested Guarantees single-pulse energy handling up to 170 mJ without parameter shift or failure.
Zener-protected gate Integrated bidirectional Zener clamps gate-source voltage to ±30 V, eliminating need for external TVS.
Low Coss (57 pF) Reduces turn-off losses and improves light-load efficiency in discontinuous conduction mode (DCM) flybacks.
High dv/dt immunity (4.5 V/ns) Prevents parasitic turn-on during rapid voltage transients in bridge-leg or PFC applications.
SuperMESH cell architecture Delivers 20% lower RDS(on) vs prior PowerMESH while maintaining same die size and voltage rating.

Applications

Offline AC-DC Adapters Flyback Converters

Use Scenario: 24–65 W universal-input (90–264 VAC) wall adapters for industrial sensors and IoT gateways.

IC Role / Device Role: Primary-side high-voltage switch in self-oscillating or controller-driven flyback topology.

Use Value: Zener protection eliminates external gate clamp; 170 mJ EAS supports snubberless operation, reducing BOM count by two components.

Use Scenario: Isolated auxiliary power supply for gate drivers in motor control inverters.

IC Role / Device Role: Low-power flyback switch delivering 12 V/0.5 A to isolated IGBT/SiC driver stage.

Use Value: 4.5 V/ns dv/dt rating prevents false triggering from high dV/dt coupling across transformer interwinding capacitance.

LED Driver Power Stages Industrial HV DC-DC Modules

Use Scenario: Constant-current LED drivers for street lighting operating from 277 VAC mains.

IC Role / Device Role: Primary switch in buck-boost or SEPIC-derived topologies handling >400 V DC input.

Use Value: 800 V VDS rating provides 2× safety margin over peak line voltage, meeting UL 1310 creepage requirements.

Use Scenario: Input-stage switch in 48–400 V DC-DC modules for railway signaling and PLC backplanes.

IC Role / Device Role: High-side switch in non-isolated buck or buck-boost regulators accepting wide HV DC input.

Use Value: RthJC = 1.78 °C/W enables full 2.5 A current derating to 100 °C case temperature without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP3NK80Z TO-220 package; identical electrical specs but higher RthJA (62 °C/W vs 50 °C/W) and no tape-and-reel option. Better suited for prototyping or low-volume open-frame supplies where manual heatsinking is feasible. Select when board space allows TO-220 mounting and volume procurement is not required.
IPP60R190C6 600 V rating, 190 mΩ RDS(on), CoolMOS™ technology; lower Qg (13 nC) but no built-in Zener protection. Optimized for high-frequency (≥100 kHz) resonant converters; requires external gate clamp and fails at 650 V DC bus. Choose only if operating below 600 V and prioritizing switching loss over ruggedness and simplicity.

Compared with STP3NK80Z and IPP60R190C6, STD3NK80Z-1 uniquely combines 800 V rating, Zener gate protection, DPAK tape-and-reel compatibility, and 100% avalanche screening - making it the most robust, production-ready choice for cost-sensitive, safety-critical offline SMPS.

Availability

STD3NK80Z-1 is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback converters, and industrial HV DC-DC modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant DPAK packaging.

Supply support for STD3NK80Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

STD3NK80Z-1 belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-reliability, high-voltage switching in cost-sensitive offline power conversion systems where avalanche ruggedness and gate protection are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD3NK80Z-1 supports 1.57 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS3337 Rev 8. This derating reflects thermal limits under natural convection on a standard FR-4 PCB with 1-inch² copper pour, ensuring safe operation without active cooling in enclosed adapters.

Does this MOSFET require an external gate Zener diode?

No. STD3NK80Z-1 integrates a bidirectional gate-source Zener diode rated for ±30 V, verified per JEDEC JESD22-A114. This eliminates the need for external clamping components in typical gate-drive circuits, simplifying layout and improving reliability in surge-prone environments.

Can STD3NK80Z-1 replace STD3NK80ZT4 in production?

Yes - STD3NK80Z-1 and STD3NK80ZT4 are identical in silicon, package, and electrical specifications. The "-1" suffix denotes the same DPAK (TO-252) type A variant with tape-and-reel packaging; both share DS3337 Rev 8 as their official datasheet and are fully interchangeable in design and manufacturing.

What is the recommended PCB footprint for thermal performance?

ST recommends the footprint defined in Figure 22 of DS3337 Rev 8: a 1-inch² (25.4 mm × 25.4 mm) copper area connected to the drain tab via ≥4 thermal vias (0.3 mm diameter, filled or plated). This achieves the stated RthJA = 50 °C/W and supports full 70 W power dissipation at TC = 25 °C.

STD3NK80Z-1 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
485 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
70W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251 (IPAK)

STD3NK80Z-1 FAQ

1.How can I place an order for STD3NK80Z-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD3NK80Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD3NK80Z-1 reliable?

The price and inventory of STD3NK80Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD3NK80Z-1 is usually 5 days.

3.What payment methods are accepted for STD3NK80Z-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD3NK80Z-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD3NK80Z-1?

STD3NK80Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD3NK80Z-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD3NK80Z-1?

For technical support, including STD3NK80Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD3NK80Z-1 requirements.

6.How does Aetrix verify that STD3NK80Z-1 is sourced from the original manufacturer or authorized distributors?

All STD3NK80Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD3NK80Z-1 meets industry standards.

7.What is the process for return or replacement of STD3NK80Z-1?

All STD3NK80Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD3NK80Z-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD3NK80Z-1 part is unused and in its original packaging.

Return procedure for STD3NK80Z-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD3NK80Z-1 Tags

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