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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD3NK80ZT4

Name: STD3NK80ZT4
Brand: STMicroelectronics
SKU: STD3NK80ZT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD3NK80ZT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD3NK80ZT4.pdf

Description:: MOSFET N-CH 800V 2.5A DPAK

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Product details

Overview

STD3NK80ZT4 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in DPAK (TO-252) package, rated for 800 V drain-source voltage, 4.5 Ω max R_DS(on) at V_GS = 10 V and I_D = 1.25 A, and 2.5 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested performance (E_AS = 170 mJ), and low gate charge (Q_g = 19 nC), targeting high-voltage flyback and SMPS primary-side switching.

For engineers reviewing the STD3NK80ZT4 datasheet, STD3NK80ZT4 pinout, STD3NK80ZT4 application, or STD3NK80ZT4 equivalent, key selection criteria include its 800 V blocking rating, Zener-protected gate, 1.78 °C/W junction-to-case thermal resistance, and compatibility with hard-switched 600–800 V DC bus topologies requiring robust unclamped inductive switching capability.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high voltage ruggedness and fast switching. Its Zener-protected gate structure enables ±30 V V_GS tolerance and intrinsic ESD immunity (2 kV HBM).

The MOSFET features low output capacitance (C_oss = 57 pF typ., C_oss,eq = 22 pF) and optimized charge distribution (Q_gd/Q_g ≈ 57%), supporting high-efficiency, high-frequency operation in quasi-resonant and fixed-frequency converters up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input offline SMPS with 640 V DC bus and 20% margin.
R_DS(on) max	4.5 Ω @ V_GS = 10 V, I_D = 1.25 A - Enables <11.3 W conduction loss at full 2.5 A load at 25 °C case temperature.
I_D cont.	2.5 A @ T_C = 25 °C - Sustains 60 W dissipation (P_TOT = 70 W) with appropriate heatsinking on FR-4 PCB.
E_AS	170 mJ @ T_J = 25 °C - Withstands single-pulse unclamped inductive energy without failure in flyback snubberless designs.
dv/dt	4.5 V/ns - Ensures reliable operation under fast voltage transients in high-noise industrial power supplies.
Q_g	19 nC - Reduces gate drive power and enables use of low-cost bipolar or CMOS gate drivers in cost-sensitive AC-DC adapters.
R_thJC	1.78 °C/W - Allows direct thermal path to copper pour or heatsink, critical for compact 15–30 W offline converters.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heat-dissipating leadframe with exposed drain tab. Mechanical outline conforms to type A per DS3337 Rev 8, featuring 6.0–6.2 mm body width (D), 6.4–6.6 mm length (E), and 9.35–10.10 mm height (H). Tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; Zener-clamped to ±30 V for ESD robustness.
2 (TAB)	Drain	Main high-voltage power terminal; electrically tied to exposed metal tab for low-inductance, high-current return path and thermal conduction.
3 (S)	Source	Power return reference; used for current sensing and gate drive referencing in low-side configurations.

Key Features

Feature	Design Value
Zener-protected gate	Integrated bidirectional Zener clamp limits V_GS to ±30 V, eliminating need for external gate protection in noisy environments.
100% avalanche tested	Every unit validated for repetitive and non-repetitive avalanche energy (I_AR = 2.5 A, E_AS = 170 mJ), ensuring field reliability in inductive switching.
Low C_oss,eq	22 pF equivalent output capacitance reduces turn-off losses and improves light-load efficiency in QR flyback converters.
Minimized Q_g	19 nC total gate charge lowers driver power consumption and simplifies gate drive design for 5–12 V controllers.
High dv/dt immunity	4.5 V/ns rated diode recovery dv/dt prevents spurious turn-on during commutation in high-side or half-bridge configurations.

Applications

AC-DC Adapter Primary Switch

Flyback Converter Main Switch

Use Scenario: 24 W universal-input (85–265 V_AC) wall adapter powering IoT sensors.

IC Role / Device Role / Timing Role: High-voltage primary-side switch operating in discontinuous conduction mode (DCM) at ~65 kHz.

Use Value: 800 V rating provides 20% margin over 640 V rectified peak; low Q_g enables efficient drive from UC3842-class controllers.

Use Scenario: Isolated 12 V/2 A output flyback supply in industrial PLC I/O module.

IC Role / Device Role / Timing Role: Unclamped inductive switching element handling 10 A pulsed drain current during energy transfer.

Use Value: 100% avalanche testing and 170 mJ E_AS eliminate need for snubber networks, reducing BOM count and board area.

LED Driver High-Voltage Switch

Industrial SMPS Input Stage

Use Scenario: Constant-current LED driver for street lighting with 400 V DC bus input.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant topology managing 2.5 A average current.

Use Value: Low C_oss (57 pF) and fast trr (384 ns) minimize switching losses at 100–200 kHz, improving system efficiency >88%.

Use Scenario: 30 W auxiliary power supply in motor drive inverter feeding control circuitry.

IC Role / Device Role / Timing Role: Hard-switched main transistor handling 800 V transients from IGBT gate drive coupling.

Use Value: 4.5 V/ns dv/dt rating and Zener-protected gate prevent false triggering during high dV/dt noise events near power stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK80Z	TO-220 package; identical electrical specs but higher R_thJA (62 °C/W vs 50 °C/W) and no tape-and-reel option.	Preferred for prototyping or low-volume through-hole assembly; unsuitable for automated SMT lines.	Select when manual soldering or heatsink mounting is required; avoid for high-density PCBs needing DPAK footprint.
IPP60R190C6	650 V rating, 190 mΩ R_DS(on), CoolMOS™ technology; lower conduction loss but insufficient voltage margin for 800 V systems.	Optimized for 380–400 V DC bus PFC+LLC topologies, not universal offline inputs.	Choose only if system DC bus is ≤450 V; not a drop-in replacement due to V_DS derating risk in 800 V applications.

Compared with STP3NK80Z, STD3NK80ZT4 offers SMT manufacturability and better thermal performance on PCB; compared with IPP60R190C6, it trades lower R_DS(on) for essential 800 V ruggedness in legacy offline designs where voltage margin is non-negotiable.

Availability

STD3NK80ZT4 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, and industrial SMPS requiring stable component supply, long-lifecycle support, and RoHS-compliant DPAK packaging.

Supply support for STD3NK80ZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STD3NK80ZT4 belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-voltage, medium-power switching applications demanding avalanche ruggedness, low gate charge, and Zener-protected gate integrity in cost-sensitive power supplies.

FAQ

What is the maximum safe operating temperature for STD3NK80ZT4?

The junction temperature must not exceed 150 °C under steady-state operation. With R_thJC = 1.78 °C/W and P_TOT = 70 W, the case temperature must be held below 26.6 °C for full power - typically achieved using ≥10 cm² 2 oz copper pour or external heatsink. Derate linearly above T_C = 25 °C per Figure 1 (SOA curve) in DS3337.

Does STD3NK80ZT4 require external gate protection?

No. The integrated Zener diode clamps gate-source voltage to ±30 V, making external TVS or resistor-Zener networks unnecessary in standard applications. However, a small series gate resistor (10–47 Ω) is still recommended to damp ringing and control dV/dt during switching transitions.

Can STD3NK80ZT4 replace STD3NK90Z in existing designs?

No - STD3NK90Z is rated for 900 V V_DS and has different R_DS(on) (5.5 Ω max) and gate charge (22 nC). Substituting STD3NK80ZT4 in a 900 V design risks avalanche failure during line surges. Voltage rating must be verified against worst-case system transients before replacement.

What is the typical reverse recovery time of the body diode?

The source-drain diode exhibits t_rr = 384 ns at T_J = 25 °C (ISD = 2.5 A, di/dt = 100 A/µs, V_DD = 50 V), increasing to 474 ns at T_J = 150 °C. This fast recovery supports quasi-resonant operation but is not optimized for synchronous rectification - external Schottky diodes are preferred for secondary-side rectification.

STD3NK80ZT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 485 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD3NK80ZT4 FAQ

1.How can I place an order for STD3NK80ZT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD3NK80ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD3NK80ZT4 reliable?

The price and inventory of STD3NK80ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD3NK80ZT4 is usually 5 days.

3.What payment methods are accepted for STD3NK80ZT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD3NK80ZT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD3NK80ZT4?

STD3NK80ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD3NK80ZT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD3NK80ZT4?

For technical support, including STD3NK80ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD3NK80ZT4 requirements.

6.How does Aetrix verify that STD3NK80ZT4 is sourced from the original manufacturer or authorized distributors?

All STD3NK80ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD3NK80ZT4 meets industry standards.

7.What is the process for return or replacement of STD3NK80ZT4?

All STD3NK80ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD3NK80ZT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD3NK80ZT4 part is unused and in its original packaging.

Return procedure for STD3NK80ZT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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